P6SMB SERIES Taiwan Semiconductor CREAT BY ART Surface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Fast response time: Typically less than 1.0ps from 0 volt to BV min - Typical IR less than 1μA above 10V - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition - AEC-Q101 qualified DO-214AA (SMB) MECHANICAL DATA Case: DO-214AA (SMB) Molding compound, UL flammability classification rating 94V-0 Standard Part No. with suffix "H" means automotive grade Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.09 g (approximately) o MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) PARAMETER SYMBOL PPK VALUE UNIT 600 Watts PD 3 Watts Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A Maximum instantaneous forward voltage at 50 A for Unidirectional only (Note 2) VF 3.5 / 5.0 Volts RθJC RθJA 10 55 ℃/W TJ - 55 to +150 O C TSTG - 55 to +150 O C Peak power dissipation at TA=25oC, Tp=1ms (Note 1) Steady state power dissipation Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25oC Per Fig. 2 Note 2: VF=3.5V on P6SMB6.8 thru P6SMB91 Devices and VF=5.0V on P6SMB100 thru P6SMB220 Device. Devices for Bipolar Applications 1. For Bidirectional Use C or CA Suffix for Types P6SMB6.8 thru Types P6SMB220A 2. Electrical Characterstics Apply in Both Directions ORDERING INFORMATION PART NO. PART NO. PACKING CODE SUFFIX P6SMBxxxx (Note 1) PACKING CODE PACKING SMB 850 / 7" Plastic reel SMB 3,000 / 13" Paper reel SMB 3,000 / 13" Plastic reel SUFFIX R5 H PACKAGE R4 G M4 Note 1: "xxxx" defines voltage from 6.8V (P6SMB6.8) to 220V (P6SMB220A) EXAMPLE PREFERRED PART NO. P6SMB20A R5 PART NO. PART NO. SUFFIX PACKING CODE P6SMB20A R5 P6SMB20A R5G P6SMB20A R5 P6SMB20AHR5 P6SMB20A Document Number: DS_D1409032 H R5 PACKING CODE SUFFIX DESCRIPTION AEC-Q101 qualified G AEC-Q101 qualified Green compound Automotive grade Version: K14 P6SMB SERIES Taiwan Semiconductor CREAT BY ART RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG. 1 PEAK PULSE POWER RATING CURVE FIG.2 PULSE DERATING CURVE 125 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 PEAK PULSE POWER(PPP) OR CURRENT (IPP) A DERATING IN PERCENTAGE (%) PPPM, PEAK PULSE POWER, KW 100 100 10 1 0.1 0.1 1 10 100 1000 75 50 25 0 0 10000 PEAK PULSE CURRENT (%) PULSE WIDTH(td) is DEFINED as the POINT WHERE the PEAK CURRENT DECAYS to 50% OF IPPM 120 Peak Value IPPM 100 Half Value-IPPM/2 80 10/1000μs, WAVEFORM as DEFINED by R.E.A. 60 40 20 td 0 0 0.5 1 1.5 2 2.5 3 3.5 4 t, TIME ms IFSM, PEAK FORWARD SURGE CURRENT (A) FIG. 3 CLAMPING POWER PULSE WAVEFORM tr=10μs 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (oC) tp, PULSE WIDTH, (μs) 140 25 FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY 100 8.3ms Single Half Sine Wave 10 1 10 100 NUMBER OF CYCLES AT 60 Hz FIG. 5 TYPICAL JUNCTION CAPACITANCE CJ, JUNCTION CAPACITANCE (pF) A 10000 VR=0 1000 100 f=1.0MHz Vsig=50mVp-p MEASURED at STAND-OFF VOLTAGE,Vwm 10 1 10 100 V(BR), BREAKDOWN VOLTAGE (V) Document Number: DS_D1409032 Version: K14rsion: J14 P6SMB SERIES Taiwan Semiconductor CREAT BY ART Device Device Marking Code Breakdown Voltage Test Stand-Off VBR (V) Current Voltage (Note 1) IT VWM @ VWM Current IRSM @ IPPM Coefficient Maximum Maximum Maximum Maximum Reverse Leakage Peak Pulse Clamping Voltage Temperature Min Max (mA) (V) ID (μA) (A) (Note 2) Vc(V) of VBR(%/oC) P6SMB6.8 KDJ 6.12 7.48 10 5.50 1000 58 10.8 0.057 P6SMB6.8A KEJ 6.46 7.14 10 5.80 1000 60 10.5 0.057 P6SMB7.5 KFJ 6.75 8.25 10 6.05 500 53 11.7 0.061 P6SMB7.5A KGJ 7.13 7.88 10 6.40 500 55 11.3 0.061 P6SMB8.2 KHJ 7.38 9.02 10 6.63 200 50 12.5 0.065 P6SMB8.2A KKJ 7.79 8.61 10 7.02 200 52 12.1 0.065 P6SMB9.1 KLJ 8.19 10.00 1.0 7.37 50 45 13.8 0.068 P6SMB9.1A KMJ 8.65 9.55 1.0 7.78 50 47 13.4 0.068 P6SMB10 KNJ 9.00 11.00 1.0 8.10 10 42 15.0 0.073 P6SMB10A KPJ 9.50 10.5 1.0 8.55 10 43 14.5 0.073 P6SMB11 KQJ 9.90 12.1 1.0 8.92 1 38 16.2 0.075 P6SMB11A KRJ 10.5 11.6 1.0 9.40 1 40 15.6 0.075 P6SMB12 KSJ 10.8 13.2 1.0 9.72 1 36 17.3 0.078 P6SMB12A KTJ 11.4 12.6 1.0 10.2 1 37 16.7 0.078 P6SMB13 KUJ 11.7 14.3 1.0 10.5 1 33 19.0 0.081 P6SMB13A KVJ 12.4 13.7 1.0 11.1 1 34 18.2 0.081 P6SMB15 KWJ 13.5 16.5 1.0 12.1 1 28 22.0 0.084 P6SMB15A KXJ 14.3 15.8 1.0 12.8 1 29 21.2 0.084 P6SMB16 KYJ 14.4 17.6 1.0 12.9 1 26 23.5 0.086 P6SMB16A KZJ 15.2 16.8 1.0 13.6 1 28 22.5 0.086 P6SMB18 LDJ 16.2 19.8 1.0 14.5 1 23 26.5 0.088 P6SMB18A LEJ 17.1 18.9 1.0 15.3 1 25 25.5 0.088 P6SMB20 LFJ 18.0 22.0 1.0 16.2 1 21 29.1 0.090 P6SMB20A LGJ 19.0 21.0 1.0 17.1 1 22 27.7 0.090 P6SMB22 LHJ 19.8 24.2 1.0 17.8 1 19 31.9 0.092 P6SMB22A LKJ 20.9 23.1 1.0 18.8 1 20 30.6 0.092 P6SMB24 LLJ 21.6 26.4 1.0 19.4 1 18 34.7 0.094 P6SMB24A LMJ 22.8 25.2 1.0 20.5 1 19 33.2 0.094 P6SMB27 LNJ 24.3 29.7 1.0 21.8 1 16 39.1 0.096 P6SMB27A LPJ 25.7 28.4 1.0 23.1 1 16.8 37.5 0.096 P6SMB30 LQJ 27.0 33.0 1.0 24.3 1 14.0 43.5 0.097 P6SMB30A LRJ 28.5 31.5 1.0 25.6 1 15.0 41.4 0.097 P6SMB33 LSJ 29.7 36.3 1.0 26.8 1 13.0 47.7 0.098 P6SMB33A LTJ 31.4 34.7 1.0 28.2 1 13.8 45.7 0.098 P6SMB36 LUJ 32.4 39.6 1.0 29.1 1 12.0 52.0 0.099 P6SMB36A LVJ 34.2 37.8 1.0 30.8 1 12.6 49.9 0.099 P6SMB39 LWJ 35.1 42.9 1.0 31.6 1 11.1 56.4 0.100 P6SMB39A LXJ 37.1 41.0 1.0 33.3 1 11.6 53.9 0.100 P6SMB43 LYJ 38.7 47.3 1.0 34.8 1 10.0 61.9 0.101 P6SMB43A LZJ 40.9 45.2 1.0 36.8 1 10.6 59.3 0.101 P6SMB47 MDJ 42.3 51.7 1.0 38.1 1 9.2 67.8 0.101 P6SMB47A MEJ 44.7 49.4 1.0 40.2 1 9.7 64.8 0.101 P6SMB51 MFJ 45.9 56.1 1.0 41.3 1 8.5 73.5 0.102 P6SMB51A MGJ 48.5 53.6 1.0 43.6 1 8.9 70.1 0.102 Document Number: DS_D1409032 Version: K14 P6SMB SERIES Taiwan Semiconductor CREAT BY ART Device Device Marking Code Breakdown Voltage Test Stand-Off VBR (V) Current Voltage (Note 1) IT VWM @ VWM Current IRSM @ IPPM Coefficient Maximum Maximum Maximum Maximum Reverse Leakage Peak Pulse Clamping Voltage Temperature Min Max (mA) (V) ID (μA) (A) (Note 2) Vc(V) of VBR(%/oC) 50.4 61.6 1.0 45.4 1 7.8 80.5 0.103 P6SMB56 MHJ P6SMB56A MKJ 53.2 58.8 1.0 47.8 1 8.1 77.0 0.103 P6SMB62 MLJ 55.8 68.2 1.0 50.2 1 7.0 89.0 0.104 P6SMB62A MMJ 58.9 65.1 1.0 53.0 1 7.4 85.0 0.104 P6SMB68 MNJ 61.2 74.8 1.0 55.1 1 6.4 98.0 0.104 P6SMB68A MPJ 64.6 71.4 1.0 58.1 1 6.8 92.0 0.104 P6SMB75 MQJ 67.5 82.5 1.0 60.7 1 5.8 108 0.105 P6SMB75A MRJ 71.3 78.8 1.0 64.1 1 6.1 103 0.105 P6SMB82 MSJ 73.8 90.2 1.0 66.4 1 5.3 118 0.105 P6SMB82A MTJ 77.9 86.1 1.0 70.1 1 5.5 113 0.105 P6SMB91 MUJ 81.9 100 1.0 73.7 1 4.8 131 0.106 P6SMB91A MVJ 86.5 95.5 1.0 77.8 1 5.0 125 0.106 P6SMB100 MWJ 90 110 1.0 81.0 1 4.3 144 0.106 P6SMB100A MXJ 95 105 1.0 85.5 1 4.5 137 0.106 P6SMB110 MYJ 99 121 1.0 89.2 1 3.9 158 0.107 P6SMB110A MZJ 105 116 1.0 94.0 1 4.1 152 0.107 P6SMB120 NDJ 108 132 1.0 97.2 1 3.6 173 0.107 P6SMB120A NEJ 114 126 1.0 102.0 1 3.8 165 0.107 P6SMB130 NFJ 117 143 1.0 105.0 1 3.3 187 0.107 P6SMB130A NGJ 124 137 1.0 111.0 1 3.5 179 0.107 P6SMB150 NHJ 135 165 1.0 121.0 1 2.9 215 0.108 P6SMB150A NKJ 143 158 1.0 128.0 1 3.0 207 0.108 P6SMB160 NLJ 144 176 1.0 130.0 1 2.7 230 0.108 P6SMB160A NMJ 152 168 1.0 136.0 1 2.8 219 0.108 P6SMB170 NNJ 153 187 1.0 138.0 1 2.5 244 0.108 P6SMB170A NPJ 162 179 1.0 145.0 1 2.6 234 0.108 P6SMB180 NQJ 162 198 1.0 146.0 1 2.4 258 0.108 P6SMB180A NRJ 171 189 1.0 154.0 1 2.5 246 0.108 P6SMB200 NSJ 180 220 1.0 162.0 1 2.1 287 0.108 P6SMB200A NTJ 190 210 1.0 171.0 1 2.2 274 0.108 P6SMB220 NUJ 198 242 1.0 175.0 1 1.8 342 0.108 P6SMB220A NVJ 209 231 1.0 185.0 1 1.9 328 0.108 Notes: 1. VBR measure after IT applied for 300μs, IT=square wave pulse or equivalent. 2. Surge current waveform per Figure. 3 and derate per Figure. 2. 3. For bipolar types having VWM of 10 volts and under, the ID limit is doubled. 4. For bidirectional use C or CA suffix for types P6SMB6.8 through P6SMB220A. 5. All terms and symbols are consistent with ANSI/IEEE C62.35. Document Number: DS_D1409032 Version: K14 P6SMB SERIES Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AA (SMB) Unit (mm) DIM. Unit (inch) Min Max Min Max A 1.95 2.10 0.077 0.083 B 4.25 4.75 0.167 0.187 C 3.48 3.73 0.137 0.147 D 1.99 2.61 0.078 0.103 E 0.90 1.41 0.035 0.056 F 5.10 5.30 0.201 0.209 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 2.3 0.091 B 2.5 0.098 C 4.3 0.169 D 1.8 0.071 E 6.8 0.268 MARKING DIAGRAM Document Number: DS_D1409032 P/N = Device Marking Code G= Green Compound YW = Date Code F= Factory Code Version: K14 P6SMB SERIES Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1409032 Version: K14