MCR100-3 SERIES_D15

MCR100-3 - MCR100-8
Taiwan Semiconductor
Small Signal Product
CREAT BY ART
Thyristors
FEATURES
- Epitaxial planar die construction
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Packing code with suffix "G" means
Green compound (Halogen free)
TO-92
MECHANICAL DATA
- Case : TO-92 plastic package
- Terminal : Matte tin plated, lead free, solderable
per MIL-STD-202, method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Weight : 0.19 gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
IT(RMS)
Forward Current RMS (All Conduction Angles)
VALUE
UNIT
0.8
A
MCR100-3
100
Peak Repetitive Forward and Reverse
MCR100-4
200
Blocking Voltage(TJ=25°C to 125°C,
MCR100-5
RGK=1KΩ)
MCR100-6
300
VDRM
VRRM
MCR100-7
500
MCR100-8
600
Peak Forward Surge Current,TA=25°C
V
400
ITSM
10
A
I2t
PGM
0.415
0.1
A2s
W
PGF(AV)
0.01
W
Forward Peak Gate Current(TA=25°C,PW≤1 μs)
IGFM
1
A
Reverse Peak Gate Current(TA=25°C,PW ≤ 1 μs)
VGRM
5
V
TJ
-40 ~ +125
°C
TSTG
-40 ~ +150
°C
(1/2 Cycle,Sine Wave,60Hz)
Circuit Fusing Considerations(t= 8.3 ms)
Forward Peak Gate Power (TA=25°C,PW≤1 μs)
Forward Average Gate Power(TA=25°C)
Operating junction temperature range
Storage temperature range
Notes: 1. Valid provided that electrodes are kept at ambient temperature
PARAMETER
Peak Forward or Reverse Blocking Current
at VAK= Rated VDRM or VRRM
Peak Forward On-State Voltage
at ITM=1A Peak, TA=25oC
Gate Trigger Current (Continous dc)
at Anode Voltage = 7 Vdc., RL=100Ω
SYMBOL
MIN
MAX
UNIT
IDRM
IRRM
-
10
μA
VTM
-
1.7
V
IGT
-
200
μA
VGT
-
0.8
V
IH
-
5
mA
Gate Trigger Current (Continous dc)
at Anode Voltage = 7 Vdc., RL=100Ω
at Anode Voltage = Rated VDRM , RL=100Ω)
Holding Current at Anode Voltage =7 Vdc, Initiating Current=20mA
Document Number: DS_S1412032
Version: D15
MCR100-3 - MCR100-8
Taiwan Semiconductor
Small Signal Product
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
100
1
0.9
80
Gate Trigger Voltage(Volts)
Gate Trigger Current (μA)
90
70
60
50
40
30
20
10
-40
-25
-10
5
20
35
50
65
80
95
0.8
0.7
0.6
0.5
0.4
0.3
0.2
110
-40
-25
-10
5
TJ , Junction Temperature (OC)
50
TJ . Junction Temperature
65
80
95
110
(OC)
1000
Latching Current(μA)
1000
Holding Current(μA)
35
Fig. 2 Typical Gate Trigger Voltage
VS. Junction Temperature
Fig. 1 Typical Gate Trigger Curent VS.
Junction Temperature
100
100
10
10
-40
-25
-10
5
20
35
50
65
80
95
-40
110
-25
-10
5
20
35
50
65
80
95
110
TJ, Junction Temperature (OC)
TJ , Junction Temperature (OC)
Fig. 4 Typical Lacthing Curent VS.
Junction Temperature
Fig. 3 Typical Holding Curent VS.
Junction Temperature
Fig. 5 Typical RMS Current Derating
Fig. 6 Typical On-State Characteristics
120
10
Maximum @ TJ=25oC
110
IT,Instantaneous On-State Current (A)
TC , Maximum Allowable Case Temperature(OC)
20
DC
100
90
80
180OC
70
60
60OC
30OC
50
120OC
90OC
40
0
0.1
0.2
0.3
IT(RMS), RMS On-State Current (AMPS)
Document Number: DS_S1412032
0.4
0.5
Maximum @ TJ=110oC
1
0.1
0.5
0.8
1.1
1.4
1.7
2
2.3
2.6
2.9
3.2
3.5
VT,Instantaneous On-State Voltage (volts)
Version: D15
MCR100-3 - MCR100-8
CREAT BY ART
Taiwan Semiconductor
Small Signal Product
ORDER INFORMATION (EXAMPLE)
MCR100‐3 A1G
Green compound code
Packing code
Part no.
PACKAGE OUTLINE DIMENSIONS
TO-92 (Ammo)
A
F
Unit (mm)
DIM.
B
C
E
D
H
G
Unit (inch)
Min
Max
Min
Max
A
4.30
5.10
0.169
0.201
B
4.30
4.70
0.169
0.185
C
12.50
-
0.492
-
D
2.20
2.80
0.087
0.110
E
0.35
0.55
0.014
0.022
F
0.59
1.40
0.023
0.055
G
0.29
0.51
0.011
0.020
H
3.30
4.10
0.130
0.161
TO-92 (Bulk)
DIM.
A
Document Number: DS_S1412032
Unit (mm)
Unit (inch)
Min
Max
Min
Max
4.30
5.10
0.169
0.201
B
4.30
4.70
0.169
0.185
C
12.50
14.50
0.492
0.571
D
1.17
1.37
0.046
0.054
E
0.35
0.55
0.014
0.022
F
1.17
1.37
0.046
0.054
G
0.59
1.40
0.023
0.055
H
0.29
0.51
0.011
0.020
I
3.30
4.10
0.130
0.161
Version: D15
CREAT BY ART
MCR100-3 - MCR100-8
Taiwan Semiconductor
Small Signal Product
MARKING DIAGRAM
x = Device P/N from 3~8
Document Number: DS_S1412032
Version: D15
MCR100-3 - MCR100-8
Taiwan Semiconductor
Small Signal Product
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_S1412032
Version: D15