ESH1DM thru ESH1JM Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Ultrafast Rectifiers - Very low profile - typical height of 0.68mm - Reduce switching and conduction loss - Ideal for automated placement - Ultrafast recovery times for high frequency - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition APPLICATION Micro SMA ESH1DM to ESH1JM is ideal device for the compact space PCB design. Specially as boost diode in power factor correction circuitry. The device is also intended for use as a free wheeling diode in power supplies For chargers, LED lighting, and other power switching applications. MECHANICAL DATA Case: Micro SMA Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 0.006g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL Marking code ESH1DM ESH1GM ESH1JM D3 D5 D7 200 400 600 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current IF(AV) 1 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 15 A Maximum instantaneous forward voltage (Note 1) @1A VF TYP. MAX. 1.25 1.5 TYP. MAX. - 1 5 50 V V Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ IR Maximum reverse recovery time (Note 2) Trr 25 ns Typical junction capacitance (Note 3) Cj 3 pF RθJM RθJA 40 92 TJ -55 to +150 O C TSTG -55 to +150 O C Typical thermal resistance (Note 4) Operating junction temperature range Storage temperature range μA O C/W Note 1: Pulse test with PW=300 μsec, 1% duty cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0 V DC Note 4: Thermal resistance RθJA - from junction to ambient, RθJM - and junction to mount Document Number：DS_D1401019 Version: B14 ESH1DM thru ESH1JM Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE GREEN COMPOUND PACKAGE PACKING Micro SMA 3000 / 7" Plastic reel CODE ESH1xM (Note 1) RS Suffix "G" Note 1: "x" defines voltage from 200V (ESH1DM) to 600V (ESH1JM) Note 2: For Micro SMA: Packing code (Whole series with green compound) EXAMPLE PREFERRED P/N PART NO. PACKING CODE ESH1JM RSG GREEN COMPOUND CODE G RS ESH1JM DESCRIPTION Green compound RATINGS AND CHARACTERISTICS CURVES FIG.1 MAXIMUM FORWARD CURRENT DERATING CURVE 1.2 FIG. 2 MAXIMUM FORWARD SURGE CURRENT 1 0.8 0.6 0.4 RESISTIVE OR INDUVTIVE LOAD 0.2 0 0 25 50 75 100 125 150 175 PEAK FORWARD SURAGE CURRENT (A) AVERAGE FORWARD CURRENT (A) (TA=25℃ unless otherwise noted) 15 8.3ms Single Half Sine-Wave 10 5 0 1 10 LEAD TEMPERATURE (oC) NUMBER OF CYCLES AT 60 Hz FIG. 3 TYPICAL FORWARD CHARACTERISTICS FIG. 4- TYPICAL REVERSE CHARACTERISTICS 10 INSTANTANEOUS REVERSE CURRENT (uA) 10 INSTANTANEOUS FORWARD CURRENT (A) 100 TJ=125℃ 1 TJ=25℃ 1 TJ=125℃ 0.1 0.01 TJ=25℃ 0.001 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) Document Number: DS_D1401019 2 2.2 2.4 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: B14 ESH1DM thru ESH1JM Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS Unit (mm) DIM. Unit (inch) Min Max Min Max A 2.30 2.70 0.091 0.106 B 2.10 2.30 0.083 0.091 C 0.63 0.73 0.025 0.029 D 0.10 0.20 0.004 0.008 E 1.15 1.35 0.045 0.053 F 0.65 0.85 0.026 0.034 G 1.15 1.35 0.045 0.053 H 0.75 0.95 0.030 0.037 I 1.10 1.50 0.043 0.059 J 0.55 0.75 0.022 0.030 K 0.55 0.75 0.022 0.030 L 0.65 0.85 0.026 0.034 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 1.1 0.043 B 2.0 0.079 C 0.5 0.020 D 0.8 0.031 E 1.0 0.039 MARKING DIAGRAM P/N = Marking code YW = Date Code Document Number: DS_D1401019 Version: B14