Datasheet (TSM650P02CX)

TSM650P02CX
20V P-Channel Power MOSFET
SOT-23
Key Parameter Performance
Pin Definition:
1. Gate
2. Source
3. Drain
Parameter
Value
Unit
VDS
-20
V
RDS(on) (max)
VGS =- 4.5V
65
VGS = -2.5V
85
VGS = -1.8V
130
Qg
nC
Block Diagram
Features
●
●
●
6.4
mΩ
Fast switching
Suited for -1.8V gate drive applications
Halogen-free
Ordering Information
Part No.
Package
Packing
TSM650P02CX RFG
SOT-23
3kcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
P-Channel MOSFET
Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±10
V
-4.1
A
-2.6
A
Parameter
Continuous Drain Current
TC = 25°C
TC = 100°C
ID
Pulsed Drain Current (Note 1)
IDM
-16.4
A
Power Dissipation @ TC = 25℃
PD
1.56
W
Operating Junction Temperature
TJ
150
°C
TSTG
-55 to +150
°C
Symbol
Limit
Unit
RӨJA
80
°C/W
Storage Temperature Range
Thermal Performance
Parameter
Thermal Resistance - Junction to Ambient
1/5
Version: A14
TSM650P02CX
20V P-Channel Power MOSFET
Electrical Specifications (TC = 25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
BVDSS
-20
--
--
V
--
52
65
--
73
85
--
105
130
-0.4
-0.6
-0.8
--
--
-1
--
--
-10
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = -250µA
VGS = -4.5V, ID = -3A
Drain-Source On-State Resistance
VGS = -2.5V, ID = -2A
RDS(on)
VGS = -1.8V, ID = -1.5A
Gate Threshold Voltage
VDS = VGS, ID = -250µA
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
(Note 2)
VDS = -20V, VGS = 0V
VDS = -16V, TJ = 125°C
VGS(TH)
IDSS
mΩ
V
µA
VGS = ±10V, VDS = 0V
IGSS
--
--
±100
nA
VDS = -10V, ID = -3A
gfs
--
5.5
--
S
Qg
--
6.4
--
Qgs
--
0.9
--
Qgd
--
1.6
--
Ciss
--
515
--
Coss
--
55
--
Crss
--
20
--
td(on)
--
5
--
tr
--
17.4
--
td(off)
--
40.7
--
tf
--
11.4
--
IS
--
--
-4.1
A
ISM
--
--
-16.4
A
VSD
--
--
-1
V
Dynamic
Total Gate Charge (Note 2,3)
Gate-Source Charge
Gate-Drain Charge
(Note 2,3)
(Note 2,3)
VDS = -10V, ID = -3A,
VGS = -4.5V
Input Capacitance
VDS = -10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
nC
pF
Switching
Turn-On Delay Time (Note 2,3)
Turn-On Rise Time
(Note 2,3)
Turn-Off Delay Time
(Note 2,3)
VDD = -10V, ID = -1A,
VGS = -4.5V, RGEN = 25Ω
Turn-Off Fall Time (Note 2,3)
ns
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulse Drain-Source Diode
Forward Current
Diode-Source Forward Voltage
Integral reverse diode in
the MOSFET
VGS = 0V, IS = -1A
Note:
1.
Pulse width limited by safe operating area
2.
Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%
3.
Switching time is essentially independent of operating temperature.
2/5
Version: A14
TSM650P02CX
20V P-Channel Power MOSFET
Electrical Characteristics Curve
Normalized RDS(on) VS. TJ
Normalized On Resistance (mW)
-ID, Continuous Drain Current (A)
Continuous Drain Current vs. TC
TJ, Junction Temperature (°C)
TC, Case Temperature (°C)
Gate Charge Waveform
-VGS, Gate to Source Voltage (V)
Normalized Gate Threshold Voltage (V)
Threshold Voltage vs. Junction Temperature
TJ, Junction Temperature (°C)
Qg, Gate Charge (nC)
Maximum Safe Operating Area
-ID, Continuous Drain Current (A)
Normalized Thermal Response (RθJA)
Normalized Thermal Transient Impedance Curve
Square Wave Pulse Duration (s)
-VDS, Drain to Source Voltage (V)
3/5
Version: A14
TSM650P02CX
20V P-Channel Power MOSFET
SOT-23 Mechanical Drawing
Unit: Millimeters
Marking Diagram
62 = Device Code
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
4/5
Version: A14
TSM650P02CX
20V P-Channel Power MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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5/5
Version: A14