ROHM RDN100N20

RDN100N20
Transistors
Switching (200V, 10A)
RDN100N20
!External dimensions (Unit : mm)
TO-220FN
4.5 +0.3
−0.1
10.0 +0.3
−0.1
5.0±0.2 8.0±0.2
15.0 +0.4
−0.2
14.0±0.5
!Application
Switching
1.2
+0.2
2.8 −0.1
3.2±0.2
12.0±0.2
!Features
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
1.3
0.8
(1) Gate
(2) Drain
(3) Source
!Structure
Silicon N-channel
MOS FET
Drain Current
Reverse Drain
Current
Continuous
Pulsed
Continuous
Pulsed
Avalanche Current
Avalanche Energy
Total Power Dissipation (TC=25°C)
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP ∗1
IDR
IDRP ∗1
IAS ∗2
EAS ∗2
PD
Tch
Tstg
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C
+0.1
2.54±0.5 0.75 −0.05
2.6±0.5
(1) (2) (3)
!Equivalent circuit
!Absolute maximum ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
2.54±0.5
Limits
200
±30
10
40
10
40
10
120
35
150
−55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
Drain
Gate
∗Gate
Protection
Diode
Source
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
1/3
RDN100N20
Transistors
!Electrical characteristics (Ta=25°C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
Conditions
VGS=±30V, VGS=0V
IGSS


±10
µA
Drain-Source Breakdown Voltage
V(BR) DSS
200


V
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IDSS


25
µA
VDS=200V, VGS=0V
Gate-Source Leakage
Gate Threshold Voltage
VGS (th)
2.0

4.0
V
VDS=10V, ID=1mA
Static Drain-Source On-State
Resistance
RDS (on)

0.27
0.36
Ω
ID=5A, VGS=10V
Forward Transfer Admittance
Yfs
2.3
3.8

S
VDS=10V, ID=5A
Input Capacitance
Ciss

543

pF
VDS=10V
Output Capacitance
Coss

193

pF
VGS=0V
Reverse Transfer Capacitance
Crss

64

pF
f=1MHz
Turn-On Delay Time
td (on)

13

ns
ID=5A, VDD 100V
tr

29

ns
VGS=10V
td (off)

38

ns
RL=20Ω
tf

26

ns
RGS=10Ω
Reverse Recovery Time
trr

133

ns
IDR=10A, VGS=0V
Reverse Recovery Charge
Qrr

0.54

µC
di / dt=100A / µs
Total Gate Charge
Qg

15

nC
VDD=100V,VGS=10V,ID=10A
Rise Time
Turn-Off Delay Time
Fall Time
!Electrical characteristic curves
14
7V
12
S
O
0m
=1
10
pe
8
6V
n
tio
ra
6
4
5V
2
0.1
1
10
100
0
1000
VGS=4V
0
DRAIN-SOURCE VOLTAGE : VDS (V)
5.6
4.8
4
3.2
2.4
1.6
0.8
0
−50 −25
0
25
50
75
100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.4 Gate Threshold Voltage
vs. Channel Temperature
4
6
8
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
0.1
0.01
10 12 14 16 18 20
0
1
VGS=10V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.5 Static Drain-Source
On-State Resistance
vs. Drain Current
100
2
4
6
8
10
GATE-SOURCE VOLTAGE : VGS (V)
Fig.3 Typical Transfer
Characteristics
Fig.2 Typical Output Characteristics
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
GATE THRESHOLD VOLTAGE : VGS (th) (V)
VDS=10V
ID=1mA
2
10
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Maximun Safe
Operating Area
6.4
DRAIN CURRENT : ID (A)
10V
9V
16
VDS=10V
Pulsed
8V
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
s
0µ
S
1m
DC
1
100
Ta=25°C
18 Pulsed
DRAIN CURRENT : ID (A)
Operation in this
area is limited
by Ros(on)
10
10
20
TC=25°C
Single Pulse
Pw
DRAIN CURRENT : ID (A)
100
Ta=25°C
Pulsed
0.75
0.5
ID=10A
0.25
0
5A
0
5
10
15
20
25
30
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
2/3
RDN100N20
Transistors
20
FORWARD TRANSFER
ADMITTANCE :Yfs(S)
0.6
0.5
0.4
ID=10A
0.3
4A
0.2
100
VDS=10V
Pulsed
10
REVERSE DRAIN CURRENT : IDR (A)
VGS=10V
Pulsed
0.7
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
5
2
1
0.5
0.1
0
25
50
75
0.2
0.05 0.1 0.2
100 125 150
Ciss(pF)
Coss(pF)
Ciss(pF)
10
1
0.1
1
10
100
Ta=25°C
VDD=100V
VGS=10V
RQ=10Ω
Pulsed
td (off)
tr
VDS
VDD=40V
VDD=100V
VDD=160V
120
100
VGS
10
80
60
VDD=40V
VDD=100V
VDD=160V
40
20
0
0
5
10
1
10
100
DRAIN CURRENT : ID (A)
Fig.13 Switching Characteristcs
0
20
15
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
Fig.9 Reverse Drain Current vs.
Source-Drain Voltage
1000
Ta=25°C
di / dt=100A / µs
VGS=0V
Pulsed
100
10
0.1
1
10
100
REVERSE DRAIN CURRENT : IDR (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.11 Dynamic Input Characteristics
Fig.12 Reverse Recovery Time
vs. Reverse Drain Current
10
1 D=1
0.5
0.2
0.1
0.1 0.05
0.02
Tc=25°C
θth(ch-c)(t)=r(t) • =θth(ch-c)
θth(ch-c)=3.57°C / W
0.01 0.01
Single pulse
PW
td (on)
10
0.1
0.01
SOURCE-DRAIN VOLTAGE : VSD (V)
140
NORMALIZED TRANSIENT
THERMAL RESISTANCE : r (t)
SWITCHING TIME : t (ns)
100
20
20
160
1000
Fig.10 Typical Capacitance vs.
Drain-Source Voltage
tr
10
Ta=25°C
ID=8.0A
Pulsed
180
DRAIN SOURCE VOLTAGE : VDS (V)
1000
5
200
DRAIN-SOURCE VOLTAGE : IDS (V)
CAPACITANCE : C (pF)
f=1MHz
VGS=0V
Ta=25°C
Pulsed
100
2
0.1
Fig.8 Forward Transfer Admittance
vs. Drain Current
Fig.7 Static Drain-Source
On-State Resistance vs.
Channel Temperature
1000
1
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
DRAIN CURRENT : ID (A)
CHANNEL TEMPERATURE : Tch (°C)
10000
0.5
GATE-SOURCE VOLTAGE : VGS (V)
0
−50 −25
VGS=0V
Pulsed
10
REVERSE RECOVERY TIME : trr (ns)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
0.8
0.001
10µ
T
100µ
1m
10m
100m
D= PW
T
1
10
PULSE WIDTH : PW (S)
Fig.14 Normalized Transient
Thermal Resistance vs.
Pulse Width
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0