IMD23 Transistors General purpose (dual digital transistors) IMD23 zExternal dimensions (Unit : mm) (1) (2) (3) 0.95 0.95 1.9 2.9 (6) (4) (5) 0.3 IMD23 1.6 0.8 0to0.1 0.3to0.6 1.1 2.8 0.15 zFeatures 1) Both the DTB113Z chip and DTC114E chip in a SMT package. 2) Mounting possible with SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 zStructure Epitaxial planar type NPN / PNP silicon transistor (Built-in resistor type) Abbreviated symbol : D23 zEquivalent circuits IMD23 (5) (4) (6) R2 R1 DTr2 DTr1 R1 R2 (3) (2) (1) DTr1=(R1/R2=1kΩ/10kΩ) DTr2=(R1/R2=10kΩ/10kΩ) zAbsolute maximum ratings (Ta=25°C) DTr1 Symbol Limits Unit Supply voltage VCC −50 V Input voltage VIN −10 to +5 V Output current IC −500 mA Power dissipation Pd 300(Total) mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Parameter ∗ ∗ 200mW per element must not be a exceeded. 1/4 IMD23 Transistors DTr2 Parameter Symbol Unit Supply voltage VCC 50 V Input voltage VIN −10 to +40 V Output current ∗ Limits IO 50 IC (Max.) 100 mA Power dissipation Pd Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 300 (TOTAL) ∗ mW 200mW per element must not be exceeded. zElectrical characteristics (Ta=25°C) DTr1 Parameter Symbol Min. Typ. Max. VI(off) − − −0.3 VI(on) −3 − − VO(on) − − −0.3 V II − − −7.2 mA VI= −5V VCC= −50V, VI=0V Input voltage Output voltage Input current Unit V IO(off) − − −0.5 µA DC current gain GI 56 − − − Input resistance R1 0.7 1 1.3 kΩ Resistance ratio R2/R1 8 10 12 − fT − 200 − MHz Output current Transition frequency Conditions VCC= −5V, IO= −100µA VO= −0.3V, IO= −20mA IO/II= −50mA/−2.5mA VO= − 5V, IO= −50mA − − VCE= −10V, IE=50mA, f=100MHz ∗ ∗ Transition frequency of the device DTr2 Parameter Input voltage Output voltage Input current Output current DC current gain ∗ Symbol Min. Typ. Max. VI (off) − − 0.5 VI (on) 3 − − VO (on) − 0.1 0.3 V II − − 0.88 mA IO (off) − − 0.5 µA VCC=50V, VI=0V GI 30 − − − VO=5V, IO=5mA Unit V Conditions VCC=5V, IO=100µA VO=0.3V, IO=10mA IO=10mA, II=0.5mA VI=5V Transition frequency fT − 250 − MHz Input resistance R1 7 10 13 kΩ VCE=10V, IE=−5mA, f=100MHz − Resistance ratio R2/R1 0.8 1 1.2 − − ∗ Transition frequency of the device 2/4 IMD23 Transistors zPackaging specifications Package Type Taping Code T110 Basic ordering unit (pieces) 3000 IMD23 zElectrical characteristic curves DTr1 (PNP) -10m -5m VO= −0.3V -20 (on) INPUT VOLTAGE : VI OUTPUT CURRENT : Io (A) (V) -50 -10 -5 Ta= −40 C 25 C 100 C -2 -1 -500m -200m -100m -500µ -1m -2m -5m -10m -20m -50m-100m-200m -500m -2m Input voltage vs. output current (ON characteristics) -1 Ta=100 C 25 C −40 C -200µ -100µ -50µ -20µ -10µ -5µ -2µ -1µ 0 200 100 Ta=100 C 25 C −40 C 50 20 10 5 2 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 INPUT VOLTAGE : VI (off) (V) Fig.2 VO= −5V 500 -1m -500µ OUTPUT CURRENT : IO (A) Fig.1 1k VCC= −5V DC CURRENT GAIN : GI -100 Output current vs. input voltage (OFF characteristics) 1 -500µ -1m -2m -5m -10m -20m -50m-100m-200m -500m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO (on) (V) -500m -200m -100m Ta=100 C 25 C −40 C -50m -20m -10m -5m -2m -1m -500µ -1m -2m -5m -10m -20m -50m-100m-200m -500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 3/4 IMD23 Transistors DTr2 (NPN) 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) 50 20 10 Ta=−40˚C 25˚C 100˚C 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.5 Input voltage vs. output current (ON characteristics) 1 2m 1m 500µ 1k VCC=5V Ta=100˚C 25˚C −40˚C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 VO=5V 500 DC CURRENT GAIN : GI 100 200 Ta=100˚C 25˚C −40˚C 100 50 20 10 5 2 0.5 1 1.5 2 2.5 INPUT VOLTAGE : VI (off) (V) Fig.6 Output current vs. input voltage (OFF characteristics) 3 1 100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) Fig.7 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO (on) (V) 500m Ta=100˚C 25˚C −40˚C 200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.8 Output voltage vs. output current 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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