100mA / 50V Digital transistors (with built-in resistors) DTC124GUA / DTC124GKA Applications Inverter, Interface, Driver Dimensions (Unit : mm) DTC124GUA 2.0 0.7 (3) (1) 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.15 1.3 0.1Min. (2) 2.1 1.25 Features 1)The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 2)Only the on / off conditions need to be set for operation, making the device design easy. 3)Higher mounting densities can be achieved. 0.9 0.2 0.3 (1) GND (2) IN (3) OUT Abbreviated symbol : K25 Structure NPN epitaxial planar silicon transistor (Resistor built-in type) DTC124GKA 1.1 2.9 0.4 0.8 1.6 2.8 (3) Packaging specifications Part No. Package UMT3 SMT3 (2) Packaging type Taping Taping 0.95 0.95 Code T106 T146 Basic ordering unit (pieces) 3000 3000 0.15 ROHM : SMT3 EIAJ : SC-59 1.9 0.3Min. (1) (1) GND (2) IN (3) OUT Abbreviated symbol : K25 − DTC124GUA − DTC124GKA Absolute maximum ratings (Ta=25C) Inner circuit Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Parameter C B R E E : Emitter C : Collector B : Base R=22kΩ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.06 - Rev.C DTC124GUA / DTC124GKA Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 50 − − V IC=50μA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=330μA ICBO − − 0.5 μA VCB=50V Collector cutoff current Conditions IEBO 140 − 260 μA VEB=4V VCE(sat) − − 0.3 V IC=10mA, IB=0.5mA DC current transfer ratio hFE 56 − − − IC=5mA, VCE=5V Emitter-base resistance R 15.4 22 28.6 kΩ Transition frequency fT ∗ − 250 − MHz Emitter cutoff current Collector-emitter saturation voltage − VCE=10V, IE= −5mA, f=100MHz ∗ Characteristics of built-in transistor 1k VCE=5V 500 Ta=100°C DC CURRENT GAIN : hFE Ta=25°C 200 100 Ta= 40°C 50 20 10 5 2 1 100∝ 200∝ 500∝ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. Collector current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Electrical characteristic curves 1 IC/IB=20/1 500m Ta=100°C 200m Ta=25°C 100m 50m Ta= 40°C 20m 10m 5m 2m 1m 100∝ 200∝ 500∝ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-Emitter saturation voltage vs. Collector current 2/2 2009.06 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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