SPF8201 1. DATA SHEET Ver.1 General Description SPF8201 is an IC for flyback type switching power control equipped with high voltage power MOSFET. It has a smaller number of external parts necessary for control, and making it easier to design circuits, and suitable for downsizing and standardization of power. 2. Features ●For automotive, AEC-Q100 Grade1 Qualified ●800V rating, built-in high voltage power MOSFET ●Built-in startup circuit (standby power consumption and external components can be reduced) ●High-precision error amp (total temperature±2%) incorporated in ICs and switching power supply can be simply configured ●Controlled by fixed frequency PWM method and oscillation frequency can be set by capacitance of external capacitor. ●Current mode control ●Built-in leading edge blanking function ●Soft start function which can set time by capacitance of external capacitor is included. ●Compact surface mount TSFP40 pin package (HSOP40 package) ●Various protection functions ・Overcurrent protection function (OCP)→Turns OFF the power MOSFET in pulse-by-pulse. ・Overload protection function (OLP) → Auto-restart ・Overheat thermal protection→Auto-restart by sensed temperature hysteresis ・Burst function under light load condition 3. Standard connection Q1 SANKEN ELECTRIC CO.,LTD. Since the switching noise caused by Q1 may affect the operation of an IC, appropriate design for peripheral circuits is required to prevent the malfunction of an IC by adding snubber circuit and /or filter circuit. 2014 Feb 1 / 19 SPF8201 4. DATA SHEET Ver.1 Package information 4-1. Package type, physical dimensions and material a b a： Type Number b： Lot Number 1st letter 2nd letter The last digit of year Month 1～9 月： Arabic Numerals 10 月：O 11 月：N 12 月：D (1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec.) 3rd & 4th letter day 01~31 Arabic Numerals 5th letter Lot details 4-2. Appearance The body shall be clean and shall not bear any stain, rust or flaw. 4-3. Marking The type number and lot number shall be clearly marked in order not to be erased easily. SANKEN ELECTRIC CO.,LTD. 2014 Feb 2 / 19 SPF8201 5. 5-1. DATA SHEET Ver.1 Block Diagram and Pin Assignment and Function Block Diagram SANKEN ELECTRIC CO.,LTD. 2014 Feb 3 / 19 SPF8201 DATA SHEET Ver.1 5-2. Pin Assignment and Function No. Symbol 1 D/ST 2 Function No. Symbol 21 GND Ground terminal - 22 N.C Non Connection 3 - 23 N.C Non Connection 4 - 24 N.C Non Connection 5 - 25 SS/STP 6 S/OCP MOSFET source / over current protection 26 GND Control IC Ground terminal 7 S/OCP MOSFET source / over current protection 27 FREQ Frequency setting terminal 8 S/OCP MOSFET source / over current protection 28 COMP Phase compensation terminal 9 S/OCP MOSFET source / over current protection 29 - 10 S/OCP MOSFET source / over current protection 30 - 11 S/OCP MOSFET source / over current protection 31 - 12 S/OCP MOSFET source / over current protection 32 - 13 GND Ground terminal 33 D/ST 14 PGND Power ground terminal (Gate drive ground) 34 N.C Non Connection 15 Option For test terminal : to be unconnected. 35 N.C Non Connection 16 FB Feedback terminal 36 N.C Non Connection 17 Vcc Power supply terminal 37 N.C Non Connection 18 N.C Non Connection 38 N.C Non Connection 19 N.C Non Connection 39 N.C Non Connection 20 GND Ground terminal 40 D/ST MOSFET Drain / Input of start-up current SANKEN ELECTRIC CO.,LTD. Function Soft-start terminal / shutoff function terminal MOSFET Drain / Input of start-up current MOSFET Drain / Input of start-up current 2014 Feb 4 / 19 SPF8201 DATA SHEET Ver.1 ・D/ST terminals (1, 33, 40 ) are internally connected to slug(D/ST). ・The terminal number 26 is a ground terminal of control IC. The terminals (13, 20, 21 ) are internally connected to slug(GND). The terminals (13, 20, 21) are required to connect to terminal number 26. ・S/OCP terminals (6、7、8、9、10、11、12) are required to be shorted. ・Terminal 2-5 and 29-32 are non-connection and they are removed from a package. 9 10 11 12 13 14 15 16 17 18 19 20 GND N.C N.C N.C SS/STP GND COMP FREQ D/ST N.C N.C S/OCP 28 27 26 25 24 23 22 21 N.C S/OCP 40 39 38 37 36 35 34 33 N.C S/OCP GND D/ST N.C N.C S/OCP GND S/OCP N.C N.C D/ST SANKEN ELECTRIC CO.,LTD. Vcc 10 11 12 13 14 15 16 17 18 19 20 FB 9 PGND option 8 S/OCP GND 7 S/OCP 6 N.C GND 8 Vcc N.C 7 D/ST 1 option 6 FB 1 PGND S/OCP S/OCP GND S/OCP S/OCP S/OCP S/OCP S/OCP GND N.C N.C SS/STP N.C GND 28 27 26 25 24 23 22 21 D/ST 40 39 38 37 36 35 34 33 FREQ COMP D/ST N.C < bottom view > N.C N.C N.C N.C N.C D/ST < top view > 2014 Feb 5 / 19 SPF8201 6. DATA SHEET Ver.1 Absolute maximum ratings and Electrical characteristics 6-1. Absolute maximum ratings (Ta=25 C) Characteristics Symbol Rating Unit Vcc terminal input voltage Vcc - 0 .3 ~ 3 6 V D/ST terminal input voltage VD/ST 600 800 600 800 V V V V DC Pulse(t<1us) DC Pulse(t<1us) ID 3 A Single pulse VS/OCP -2 ~ 6 V VFB - 0 .3 ~ 6 V SS/STP terminal Voltage VSS/STP - 0 .3 ~ 6 V FREQ terminal Voltage VFRQ -0.3 ~ 6 V COMP terminal Voltage Vcomp - 0 .3 ~ 6 V PGND terminal Voltage VPG - 0 .3 ~ 0 . 3 V 35.7 W Tc=25℃ 2 .1 W （※1-2） Dependent on the mount PCB MOSFET D-S voltage MOSFET Drain peak current S/OCP terminal voltage FB terminal voltage Power dissipation VDS Pd Junction temperature Tj -40 ~ 150 ℃ Storage temperature Tstg -40 ~ 150 ℃ Remarks Tj=-40 ~ 1 2 5 ℃ (※1-1) Tj=-40 ~ 1 2 5 ℃ (※1-1) ※1-1 Tj= - 40℃ shall be treated as a design value. ※1-2 Mount with glass epoxy resin (size : 115mm x 38 mm x 1.6mmt) SANKEN ELECTRIC CO.,LTD. 2014 Feb 6 / 19 SPF8201 6-2. DATA SHEET Ver.1 Electrical characteristics (Vcc=16V※2、Tj = - 40～125℃ ※3 Characteristics Symbol unless otherwise specified) Limits MIN TYP MAX Unit Test condition Operation start voltage Vccon 13.1 15.3 16.5 V Operation stop voltage Vccoff 7.0 8.3 9.6 V Circuit current in operation Iccon 3.4 6 mA Vcc > Vccon Circuit current in non-operation Iccoff 0.15 0.4 mA Vcc < Vccon VD/ST=300V Vcc=0V Start-up current Istartup 1 2.5 4 mA SS/STP terminal high level threshold voltage VHSS 1.1 1.2 1.3 V SS/STP terminal low level threshold voltage VLSS 0.1 0.2 0.3 V SS/STP terminal outflow current Isrc(ss) 10 18 26 uA VSS/STP=0.1V SS /STPterminal inflow current Isnk(ss) 10 18 26 uA VSS/STP=1.3V 90 100 110 kHz 115 kHz Switching frequency Fosc 85 Tj=25℃ FREQ=200pF Tj=-40~125℃ FREQ=200pF FREQ terminal high level threshold voltage VHF 1.1 1.2 1.3 V FREQ terminal low level threshold voltage VLF 0.1 0.2 0.3 V FREQ terminal outflow current Isrc(fq) 22 28 34 uA VFREQ=0.1V Maximum on-duty width Dmax 43.0 47.0 49.9 % FREQ=200pF Feedback voltage VFB 2.45 2.50 2.55 V Minimum on-time tonmin 450 ns FREQ=200pF Leading edge blanking time tBW 250 ns Design value FREQ=200pF OCP threshold voltage Vocp 0.46 0.50 0.54 V OLP delay time tolp 24 38 52 ms 0.29 0.40 V Burst function operation voltage VBST SS /STP terminal disable threshold voltage VSTS 3.5 4.0 4.5 V SS/STP terminal enable threshold voltage VSTR 3.1 3.6 4.1 V SANKEN ELECTRIC CO.,LTD. Css/STP=0.01uF 2014 Feb 7 / 19 SPF8201 DATA SHEET Characteristics Ver.1 Symbol Limits 151 165 ℃ Design guarantee ℃ Design guarantee 500 uA Between D/ST and GND VD/ST=600V 10 uA VDS=600V, Tj=25℃ 100 uA VDS=600V, Tj=125℃ 6.5 Ω Tj=25℃, ID = 0.5A 13 Ω Tj=125℃, ID = 0.5A tr 350 ns Rload=100Ω,VD/ST=10V tf 350 ns Rload=100Ω,VD/ST=10V TjH Thermal shutdown release temperature TjL 150 D/ST terminal input current ID/ST 200 MOSFET Drain-source leakage current IDSS MOSFET on-resistance MOSFET switching time ※4 Test condition TYP Thermal shutdown operation temperature 5.6 Rdson MAX Unit MIN ※2 Vcc = 16 V means the condition after the voltage once exceeds “Operation start voltage (Vccon)” ※3 Tj= - 40℃ shall be treated as a design value. The ratings of devices shall be checked at 25 and 125℃ at Outgoing Inspection. ※4 MOSFET switching time Recommended operating conditions Characteristics Symbol Limits Unit Vcc terminal maximum input voltage Vcc 28 V Switching frequency Fosc 20 ~ 200 kHz SANKEN ELECTRIC CO.,LTD. Test condition 2014 Feb 8 / 19 SPF8201 7. DATA SHEET Ver.1 Terminal description 7-1. D/ST terminal, Vcc terminal Fig. 7-1 shows the peripheral circuit of D/ST and Vcc terminals. The drain of the internal MOSFET and the start-up circuit are connected to D/ST terminal, and Vcc is power supply terminal of the IC. When the high voltage is inputted to D/ST terminal, the start-up circuit (constant current circuit) operates, and “Start-up Current (Istartup = 2.5mA typ.)” charges C1 which is connected Vcc. And when the Vcc voltage reaches “Operation Start Voltage (Vccon = 15.3V typ.)”, the IC starts switching operation. When the IC starts the switching operation, the start-up circuit stops its operation and the power for it is not consumed anymore. During the switching operation, the power is supplied to Vcc from the auxiliary winding D through the rectification circuit composed by D1 and C1. When Vcc voltage falls under “Operation Stop Voltage (Vccoff = 8.3V typ.)”, IC stops switching operation. Vcc voltage vs. Vcc terminal circuit current is shown in Fig.7-2, and the timing chart is shown in Fig.7-3. For a while after start-up, the power is supplied to Vcc from C1. If the C1 capacitance is not enough, the start-up behavior may cause malfunction. Therefore 10uF to 47uF is recommended as C1 generally. HV HV P D/ST ≒25V D1 Vcc time D Cp Istartup 2.5mA (typ) C1 time GND Fig.7-1 3.4mA (typ) Vcc PGND Operation start IC動作開始 設定電圧 Setting voltage Vccon=15.3V (typ) The peripheral circuit of D/ST and Vcc terminals Vccoff=8.3V (typ) Iccon tstart 停止 起動 time D/ST 発振動作 Vcc 8.3V (typ) time 15.3V (typ) Fig. 7-2 Vcc Voltage vs. Circuit Current (Icc) SANKEN ELECTRIC CO.,LTD. Fig.7-3 Timing chart at Start-up 2014 Feb 9 / 19 SPF8201 7-2. DATA SHEET Ver.1 FREQ terminal The internal oscillation frequency can be set at FREQ terminal. By charging and discharging external capacitor, the internal oscillation is generated (FREQ terminal high level threshold voltage VHF = 1.2V typ. and FREQ terminal low level threshold voltage VLF = 0.2V typ.). Therefore the oscillation frequency is set by the capacitance. The Capacitor is required to be connected to FREQ terminal as close as possible. Oscillation Frequency（ kHz） 1000 100 10 1 10 100 1000 10000 FREQ capacitance（ pF） Fig.7-4 7-3. Capacitance vs. Oscillation Frequency SS/STP terminal Soft Start Time and Over Load Protection Delay Time (tolp) can be set at SS/STP terminal, and this terminal has Disable Function as well. Soft Start circuit is integrated in order to reduce the stress of the internal MOSFET and rectification diode from high dV/dt and rush current. The soft start is realised by increasing “OCP threshold voltage (Vocp)” from zero softly. “OCP threshold voltage” is reference voltage of the comparator which is connected to S/OCP terminal internally. Since “OCP threshold voltage” increases in proportion to SS/STP terminal voltage, the Soft Start Time can be set by external capacitor of SS/STP terminal. SS/STP terminal also control OLP Delay Time. The delay time is controlled by the internal oscillator, and the frequency of the oscillator is controlled by external capacitor connected to SS/STP terminal. SANKEN ELECTRIC CO.,LTD. 2014 Feb 10 / 19 SPF8201 7-3-1. DATA SHEET Ver.1 Soft Start Function When Vcc voltage reaches Vccon (15.3 typ.), the external capacitor which is connected to SS/STP terminal is charged by “SS/STP terminal outflow current (Isrc(ss) = 18uA typ.)”. And “OCP threshold voltage” increases in proportion to SS/STP terminal voltage, and it is fixed at Vocp (0.5V typ.) when SS/STP terminal voltage exceeds approx. 1.0V. Since the drain current of internal MOSFET is restricted by “OCP threshold voltage”, the soft start is realised by above operation. Since the “OCP threshold voltage” is fixed at approx. 0.5V when SS/STP terminal voltage reaches approx. 1.0V, the soft start period (tss) can be calculated by “ tss[s] = 1 [V] x CSS/STP [uF] / 18 [uA]”. The external capacitor CSS/STP also control “OLP delay time (tolp)”. If the capacitance is not enough, over load protection could operate before stable switching operation and the start-up malfunction could occur. Therefore 0.01uF to 0.47uF is recommended as CSS/STP capacitance. Fig.7-5 Fig.7-6 SANKEN ELECTRIC CO.,LTD. SS/STP terminal SS/STP voltage and OCP threshold voltage 2014 Feb 11 / 19 SPF8201 7-3-2. DATA SHEET Ver.1 Overload Protection (OLP) Function Overload is defined as the drain current of the internal MOSFET is restricted by OCP function or the IC operates at maximum on-duty. When overload condition continues for “OLP delay time (tolp)”, the IC stops switching operation in order to protect the internal MOSFET and external secondary rectification diode. The “OLP delay time” is decided by counting the pulse of the internal oscillator (SS_OSC) connected to SS/STP terminal. In case that the external capacitance connected to SS/STP terminal is 0.01uF, tolp = 38ms typ. Therefore “tolp” can be calculated by “tolp[ms] = 38[ms] x CSS/STP[uF] / 0.01[uF]”. When OLP function activates, internal MOSFET keeps shutoff for 7 times longer than “tolp” , and then the IC starts switching operation again. In case that the overload condition is not released, the switching operation and shutoff are repeated with the period of “8 x tolp”. Fig.7-7 7-3-3. Overload protection operation Shutoff (disable) Function The IC switching operation can be shut off forcibly by external input to SS/STP terminal which exceeds “Drive stop SS/STP threshold voltage (VSTS = 4.0V typ.)”. When the external input is disconnected and the SS/STP terminal voltage decreases under “Drive recovery SS/STP threshold voltage (VSTR = 3.6V typ.)”, the shutoff is released. Fig.7-8 Shutoff (disable) Function SANKEN ELECTRIC CO.,LTD. 2014 Feb 12 / 19 SPF8201 7-4. DATA SHEET Ver.1 S/OCP terminal S/OCP terminal detects the drain current of the internal MOSFET. The sense resistor is connected between S/OCP and GND terminal externally. S/OCP terminal detects the drain current at pulse by pulse, and when the S/OCP terminal voltage exceeds “OCP threshold voltage (Vocp = 0.5V typ.)”, the over-current function operates and the internal MOSFET is turned off every switching period. Since the high frequency current flows through the sense resistor, low inductance and high surge tolerance resistor shall be used. 7-5. COMP terminal COMP terminal is the output of an error amplifier. The capacitor Ccomp and the resistor Rcomp are connected between COMP and GND terminals generally. Appropriate capacitance must be chosen by checking the operation. 7-6. FB terminal FB terminal is the input of an error amplifier. To control output voltage of a converter, the SPF8201 has current mode control, which is superior transient response and stability. The device has an error amplifier between FB terminal and COMP terminal. FB terminal adjusts input voltage to equalize VFB, Feedback voltage,=2.5V. In case that a user does not use an optocoupler to regulate secondary voltage, please use an auxiliary winding and make combined voltage in primary side from secondary output and an transformer to control operation, as described in Fig.7-9. When the auxiliary winding circuit is composed as Fig.7-9, a smoothing capacitor, V3, and secondly output VOUT is set by turn ratio of N2 and N3. The following is the equation. VOUT=(N2/N3)xV3 The voltage,V3, is divided by resistors and input to FB terminal. Then, IC controls voltage on FB terminal to be equalized VFB=2.5V. Therefore, VOUT=(R1+R2)/R2x2.5 Thus, secondly output will be controlled as follow. VOUT=N2/N3x(R1+R2)/R2x2.5 Fig.7-9 SANKEN ELECTRIC CO.,LTD. FB terminal and COMP terminal peripheral circuit 2014 Feb 13 / 19 SPF8201 DATA SHEET Ver.1 In actual use, there is a deviation between actual output and calculated output due to leakage from a transformer, and VF variance of secondly rectifier diode D2 and diode D1in the above schematic. Therefore, please adjust operation in an actual converter. When a user use transformer turns N2=N3, VOUT=V3, and a diode D2 and a diode D3 are the same, these will improve regulation accuracy of secondly output. Since auxiliary winding current is small, surge current generated by turn off of MOSFET(M1) charges C1. When C1 discharges, fluctuation of secondly side output voltage will be enlarged. In order to prevent this phenomenon, adding a dummy resistor (R3) in the circuit would mitigate the fluctuation. 7-7. PGND Terminal PGND terminal is a GND terminal for an internal gate drive circuit. 7-8. Thermal Shut Down (TSD) Thermal Shut Down is a function which stops oscillation of D/ST terminal when a control IC reaches TjH=165℃(typ). Then, after the temperature decreases to TjL=150℃, protection function is released and oscillation will resumed at D/ST terminal. (Auto re-start operation) Thermal Shut Down is a function to protect IC at abnormal mode. In case that generated heat persists on the IC for long duration, the protection does not guarantee safe and reliable operation of the device. 7-9. Burst mode As load decreases, COMP terminal voltage of the IC will decrease. When COMP terminal voltage drops lower than the burst function operation voltage VBST=0.29V, IC stops oscillation of a MOSFET (M1). Then, the output voltage drop raises COMP terminal voltage. When the COMP terminal voltage exceeds 0.35V, MOSFET(M1) resumes oscillation. By Burst mode operation, the IC prevents increase of output voltage during low load condition. SANKEN ELECTRIC CO.,LTD. 2014 Feb 14 / 19 SPF8201 DATA SHEET Ver.1 8. Cautions for Designing a Converter 8-1. External Component A user shall select external components which meet usage requirements. ・Taking into account ripple current, voltage, and temperature rise, certain margins are needed for input and output smoothing electrolytic capacitors. These capacitors have to be high-ripple an low impedance type for a switching power supply. ・Please set appropriate margin for a transformer because loss of copper and steel generates heat. Since switching current contains high frequency element, in case that surface effect cannot be ignored, please choose a winding wire diameter around 3-4A/mm2 . In case that impact of skin effect cannot be ignored and additional thermal measures are needed, please increase surface area of winding wire by increasing number of wires or using litz wire. ・High frequency switching current flows through a current sense resister, Rocp. If a resister with large internal inductance is used, it could cause operation error. Please choose a resister with small inductance and high surge tolerance for Rocp. 8-2. Auxiliary winding In an actual converter, there would be modulation of secondly output voltage by output current, IOUT. The modulation occurs because instantaneously incurred surge voltage, when MOSFET turns off, charges a capacitor, C1. In order to avoid this phenomenon, it is effective to put a rectifier, D1, and a resister,Rcc, in series as shown in Fig.8-1. Modulation of Vcc terminal voltage depends on a structure of a transformer. Rcc needs to be optimized with a transformer. As decribed in 7-6, adding a dummy resister, R3, is effective solution. When the following cases are applicable, output voltage modulation will be worsen. winding position of auxiliary wind D during transformer design. A user needs to pay attention to · Bad coupling of primary and secondly of a transformer (Low output voltage, high current load specifications) · Bad coupling with an auxiliary winding D and output winding Fig.8-1 Vcc terminal peripheral circuit which is less affect of output current, Iout SANKEN ELECTRIC CO.,LTD. 2014 Feb 15 / 19 SPF8201 DATA SHEET Ver.1 8-3. Noise reduction measures of secondly diode Fig.8-2 shows two noise reduction measures of a secondly diode. As described in the schematic (a), put a ceramic capacitor Cdi in parallel with a diode D2. In case that there is abnormal ringing appears on drain current, it is recommended to put a damper resister Rdi in series to stabilize draing current as described the schematic (b). Temperature rise of components, Rdi and Cdi, needs to be verified thoroughly before use. (a) (b) Fig.8-2 Secondly diode noise reduction measure 8-4. Pattern Layout Pattern layout and mounting condition have impacts on malfunction, noise, and loss. Therefore, it is important to consider carefully with pattern layout and component location. As described in the Fig.8-3, a pattern for high frequency current loop shall be as thick as possible and connection between components as short as possible to make surface area of loop as small as possible to lower line impedance of a pattern. In addition, GND line has impact on radiation noise. Therefore, please make pattern as thick and short as possible for GND line. Since there are high frequency and high voltage current paths in a switching converter, a user need to examine component layout, pattern, and creepage distance to meet safety regulations. Furthermore, Rdson of MOSFET is a positive temperature coefficient. Please consider thermal characteristics during the design of a converter. Fig.8-3 High Frequency Current Loop (Shaded Area) SANKEN ELECTRIC CO.,LTD. 2014 Feb 16 / 19 SPF8201 DATA SHEET Ver.1 Fig.8-4 Transformer→Rcc→D1→C1→Transformer As described in Fig.8-4, high frequency current flows from transformer →Rcc→D1→C1→transformer, please make a pattern for this loop as thick and short as possible. Please avoid overlap with above loop and connection for other components (R1, R2, R3, Cp, and IC etc.). The loop needs to be connected to both terminal of C1. Signal GND and Power GND around the IC connects to terminal of a source resister and connect with a (-) terminal of capacitor with a thick and short pattern. SANKEN ELECTRIC CO.,LTD. 2014 Feb 17 / 19 SPF8201 DATA SHEET Ver.1 CAUTION/ WARNING Application and operation examples described in this document are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically or otherwise processing or treating the products, please duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Please return to us this document with your signature(s) or seal(s) prior to the use of the products herein. When considering the use of Sanken products in the applications where higher reliability is required (traffic signal control systems o equipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearest Sanken sales representative to discuss, and then return to us this document with your signature(s) or seal(s) prior to the use of the products herein. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. Anti radioactive ray design is not considered for the products listed herein. SANKEN ELECTRIC CO.,LTD. 2014 Feb 18 / 19 SPF8201 DATA SHEET Ver.1 Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sanken’s distribution network. In the case that you use our semiconductor devices or design your products by using our semiconductor devices, the reliability largely depends on the degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation range is set by derating the load from each rated value or surge voltage or noise is considered for derating in order to assure or improve the reliability..In general, derating factors include electric stresses such as electric voltage, electric current, electric power etc., environmental stresses such as ambient temperature, humidity etc. and thermal stress caused due to self-heating of semiconductor devices. For these stresses, instantaneous values, maximum values and minimum values must be taken into consideration. In addition, it should be noted that since power devices or IC’s including power devices have large self-heating value, the degree of derating of junction temperature (Tj) affects the reliability significantly. SANKEN ELECTRIC CO.,LTD. 2014 Feb 19 / 19