http://www.sanken-ele.co.jp SANKEN ELECTRIC ２ＳＫ３７１０ Features ･ Low on-state resistance 5.0mΩ VGS=10V ･ Built-in gate protection diode ･SMD PKG May. 2011 Package TO220S Applications ･DC－DC converter ･Mortar drive Internal Equivalent Circuit Ｄ(2) Key Specifications ･V(BR)DSS = 60V (ID=100uA) ･RDS(ON) = 5mΩ max (ID=35A / VGS=10V) Ｇ(1) Ｓ(3) Absolute maximum ratings (Ta=25°C） Characteristic Symbol Rating Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Continuous Drain Current ID ±85 A Pulsed Drain Current ID(pulse) *１ ±170 A Maximum Power Dissipation PD 1 0 0 (Tc=2 5 °C) W Single Pulse Avalanche Energy EAS *2 400 mJ Maximum avalanche current IAS 25 A Channel Temperature Tch 150 °C Storage Temperature Tstg -5 5 ~ +1 5 0 °C Maximum Drain to Source dv/dt 1 dv/dt 1*2 0 .5 V/ns Peak diode recovery dv/dt 2 dv/dt 2*3 3 V/ns Peak diode recovery di/dt di/dt*3 100 A/µs *1 PW≤100µsec. duty cycle≤1％ *2 VDD=20V, L=1mH, IL=25A, unclamped, Rg=50Ω，See Fig.1 *3 ISD=25A，See Fig.2 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 1 http://www.sanken-ele.co.jp SANKEN ELECTRIC ２ＳＫ３７１０ May. 2011 Electrical characteristics (Ta=25°C） Characteristic Symbol Test Conditions Drain to Source breakdown Voltage V(BR)DSS ID=100μA VGS=0V Gate to Source Leakage Current IGSS VGS=±15V Drain to Source Leakage Current IDSS Gate Threshold Voltage VTH Forward Transconductance Re(yfs) Static Drain to Source On-Resistance RDS(ON) Input Capacitance Ciss VDS=60V VGS=0V VDS=10V, ID=1mA VDS=10V ID=35A ID=35A, VGS=10V Limits MIN TYP MAX 60 Unit V 2.0 3.4 30 80 5.0 ±10 µA 100 µA 4.0 V S 6.0 mΩ 8400 VDS=10V Output Capacitance Coss VGS=0V Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) ID=35A tr RG=22Ω 1200 pF f=1MHz Rise Time 930 160 VDD=20V 170 RGS=50Ω ns Turn-Off Delay Time td(off) Fall Time tf Source-Drain Diode Forward Voltage VSD Source-Drain Diode Reverse Recovery Time trr Thermal Resistance Junction to Case Rth(ch-c) 1.25 °C/W Thermal Resistance Junction to Ambient Rth(ch-a) 62.5 °C/W RL=0.57Ω VGS=10V See Fig.3 ISD=50A VGS=0V ISD=25A ｄi/dt=50A/µs 430 185 0.9 65 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 2 1.5 V ns http://www.sanken-ele.co.jp SANKEN ELECTRIC ２ＳＫ３７１０ May. 2011 Characteristic Curves (Tc=25°C) ID-VDS characteristics (typical) ID-VGS characteristics (typical) 100 10V 6V 80 80 60 60 ID (A) ID (A) VDS=10V 100 8V 40 Tc = 150℃ 25℃ -55℃ 40 VGS =5V 20 20 0 0 0.0 0.5 1.0 0 1.5 2 RDS(ON)-Tc characteristics (typical) 8 VGS=10V 7 6 10 5 8 RDS(ON) (mΩ ) RDS(ON) (mΩ ) 6 RDS(ON)-ID characteristics (typical) ID=35A VGS=10V 12 4 VGS (V) VDS (V) 6 4 2 4 3 2 1 0 0 -75 -50 -25 0 25 50 0 75 100 125 150 Tc (℃) 40 60 80 100 ID (A) Re(yfs)-ID characteristics (typical) VDS-VGS characteristics (typical) 1000 1.0 100 VDS (V) Re(yf s) (S) 1.5 0.5 20 ID=100A -55℃ 25℃ Tc = 150℃ 10 ID=70A ID=35A 0.0 1 1 10 100 1 10 ID (A) VGS (V) The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 3 100 http://www.sanken-ele.co.jp SANKEN ELECTRIC ２ＳＫ３７１０ May. 2011 Characteristic Curves (Tc=25°C) IDR-VSD characteristics (typical) Capacitance-VDS characteristics (typical) VGS=0V f=1MHz 100000 VGS=0V 100 80 Ciss IDR (A) Capacitance (pF) 10000 60 Tc = 150℃ 25℃ 40 Coss 1000 -55℃ 20 Crss 100 0 0 10 20 30 40 0 50 0.2 0.4 TRANSIENT THERMAL RESISTANCE - PULSE WIDTH 10 rth(ch-c) (℃/W) 0.6 0.8 1 1.2 VSD (V) VDS (V) Single Pulse 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 PW (sec) PD-Ta characteristics (typical) 120 100 With infinite heatsink PD (W) 80 60 40 20 Without iheatsink 0 0 50 100 150 Ta (℃) The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 4 1.4 http://www.sanken-ele.co.jp SANKEN ELECTRIC ２ＳＫ３７１０ Fig.1 May. 2011 Unclamped Inductive Test Method EAS= V(BR)DSS 1 ･L･ILP2・ 2 V(BR)DSS VDD L dv/dt 1 V(BR)DSS IL V DS ILp RG V DD V GS IL VDD 0V (ａ) Test Circuit Fig.2 (b) Waveforms Diode Reverse Recovery Time Test Method ISD trr di/dt VDS D.U.T ISD L IRM VDD VDD dv/dt 2 RG V GS 0V VSD (ａ) Test Circuit Fig.3 (b) Waveforms Switching Time Test Method 90% RL VGS 10% ID VDS 90% RG VGS VDD VDS RGS 10% 0V td(on) P.W.=10μs Duty cycle≦1% tr td(off) ton tf toff (b) Waveforms (ａ) Test Circuit The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 5 http://www.sanken-ele.co.jp SANKEN ELECTRIC ２ＳＫ３７１０ May. 2011 Outline TO220S (1) (2) (3) (1) Gate (2) Drain (3) Source Weight Approx. 1.4g The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 6