N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancement Mode Field Effect Transistor Features • • • • • High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability RoHS compliance TO-92 Mechanical Data Case: TO-92, Plastic Package Terminals: Weight: Solderable per MIL-STD-202G, Method 208 0.18 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N7000 Unit VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS≤1MΩ) 60 V Continuous ±20 V VGSS Gate-Source Voltage Non Repetitive (tp<50µs) ±40 V Continuous 200 mA Pulsed 500 mA ID Drain Current IDP PD Drain Power Dissipation 400 mW TJ Junction Temperature 150 °C -55 to +150 °C TSTG Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. B/NX Page 1 of 8 N-Channel Enhancement Mode Field Effect Transistor 2N7000 Equivalent Circuit This transistor is electrostatic sensitive device. Please handle with caution. Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description Min. Typ. Max. Unit Conditions BVDSS Drain-Source Breakdown Voltage 60 - - V VGS=0V, ID=10µA IDSS Zero Gate Voltage Drain Current - - 1 µA VDS=48V, VGS=0V IGSSF Gate- Body Leakage, Forward - - 1 µA VGS=15V, VDS=0V IGSSR Gate- Body Leakage, Reverse - - -1 µA VGS=-15V, VDS=0V Min. Typ. Max. Unit Conditions 0.8 2.1 3.0 V VDS=VGS, ID=1mA - 1.2 5.0 Ω VGS=10V, ID=500mA - 1.8 5.3 Ω VGS=4.5V, ID=75mA - 0.6 2.5 V VGS=10V, ID=500mA - 0.14 0.4 V VGS=4.5V, ID=75mA On State Drain Current 75 600 - mA VGS=4.5V, VDS=10V Forward Transconductance 100 320 - mS VDS=10V, ID=200mA On Characteristics (Note) Symbol Vth Description Gate Threshold Voltage RDS(ON) Drain-Source ON Resistance VDS(ON) Drain-Source ON Voltage ID(ON) gFS Note: Pulse Test: Pulse Width<300µs, Duty Cycle<2% Rev. B/NX www.taitroncomponents.com Page 2 of 8 N-Channel Enhancement Mode Field Effect Transistor 2N7000 Dynamic Characteristics Symbol Description Min. Typ. Max. Unit CISS Input Capacitance - 20 50 pF CRSS Reverse Transfer Capacitance - 4 5 pF COSS Output Capacitance - 11 25 pF Turn-on Time - - 10 nS Turn-off Time - - 10 nS ton toff Switching Time Conditions VDS=25V, VGS=0V, f=1MHz VDD=15V, RL=25Ω, ID=200mA, VGS=10V, RGEN=25Ω Switching Time Test Circuit Rev. B/NX www.taitroncomponents.com Page 3 of 8 N-Channel Enhancement Mode Field Effect Transistor 2N7000 Typical Characteristics Curves Fig.2- RDS(ON) - ID Drain Current ID (A) Drain-Source ON Resistance RDS(ON) (Ω) (Normalized) Fig.1- ID - VDS Drain-Source Voltage VDS (V) Drain Current ID (A) Fig.4- RDS(ON) - ID Drain-Source ON Resistance RDS(ON) (Ω) (Normalized) Drain-Source ON Resistance RDS(ON) (Ω) (Normalized) Fig.3- RDS(ON) - TJ Junction Temperature TJ (° C) Drain Current ID (A) Rev. B/NX www.taitroncomponents.com Page 4 of 8 N-Channel Enhancement Mode Field Effect Transistor 2N7000 Fig.6- Vth - TJ Drain Current ID (A) Gate-Source Threshold Voltage Vth (Normalized) Fig.5- ID - VGS Gate-Source Voltage VGS (V) Junction Temperature TJ (° C) Fig.8- C - VDS Capacitance C (pF) Reverse Drain Current IS (A) Fig.7- Is - VSD Body Diode Forward Voltage VSD (V) Drain Source Voltage VDS (V) Rev. B/NX www.taitroncomponents.com Page 5 of 8 N-Channel Enhancement Mode Field Effect Transistor 2N7000 Fig.10- ID - VDS Drain Current ID (A) Gate-Source Voltage VGS (V) Fig.9- VGS - Qg Gate Charge Qg (nC) Drain Source Voltage VDS (V) Drain Power Dissipation PD (mW) Fig.11- PD - TA Ambient Temperature TA (° C) Rev. B/NX www.taitroncomponents.com Page 6 of 8 N-Channel Enhancement Mode Field Effect Transistor 2N7000 Dimensions in mm TO-92 Rev. B/NX www.taitroncomponents.com Page 7 of 8 N-Channel Enhancement Mode Field Effect Transistor 2N7000 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. B/NX www.taitroncomponents.com Page 8 of 8