SMD Power Transistor (PNP) MJD32C SMD Power Transistor (PNP) Features • Designed for general purpose amplifier and low speed switching applications • RoHS compliance D-PACK (TO-252) Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Marking Code MJD32C Unit MJD32C VCEO Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 100 V VEBO Emitter-Base Voltage 5 V Collector Current Continuous 3 A Collector Current Peak 5 A Base Current 1 A Power Dissipation at TC=25°C 15 W Derate above 25°C 0.12 W/°C Power Dissipation at TA=25°C 1.56 W Derate above 25°C 0.012 W/°C -65 to +150 °C IC ICP IB PD *PD TJ, TSTG Operating and Storage Junction Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. B/CZ Page 1 of 4 SMD Power Transistor (PNP) MJD32C Thermal Characteristics Symbol Description MJD32C Unit RthJC Thermal Resistance from Junction to Case 8.3 °C/W *RthJA Thermal Resistance from Junction to Ambient 80 °C/W Lead Temperature for Soldering 260 °C TL Note: *These ratings are applicable when surface mounted on the minimum pad sizes recommended. Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description Min. Max. Unit Conditions VCEO Collector Emitter Voltage 100 - V IC=1mA, IB=0 ICEO Collector Cut-off Current - 50 µA VCE=60V, IB=0 ICES Collector Cut-off Current - 20 µA VCE=Rated VCEO, VEB=0 IEBO Emitter Cut-off Current - 1 mA VEB=5V, IC=0 Min. Max. Unit Conditions On Characteristics (**) Symbol Description VCE(sat) Collector Emitter Saturation Voltage - 1.2 V IC=3A, IB=0.375A VBE(on) Base Emitter on Voltage - 1.8 V VCE=4V, IC=3A 25 - VCE=4V, IC=1A 10 50 VCE=4V, IC=3A Min. Typ. Unit Current Gain Bandwidth Product 3 - MHz Small Signal Current Gain 20 - hFE D.C. Current Gain Dynamic Characteristics Symbol ***fT hfe Description Conditions VCE=10V, IC=500mA, f=1MHz VCE=10V, IC=500mA, f=1KHz Note: ** Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%. *** fT=|hfe|. ftest Rev. B/CZ www.taitroncomponents.com Page 2 of 4 SMD Power Transistor (PNP) MJD32C Dimensions in mm D-PACK (TO-252) Rev. B/CZ www.taitroncomponents.com Page 3 of 4 SMD Power Transistor (PNP) MJD32C How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. B/CZ www.taitroncomponents.com Page 4 of 4