BSS123 - Taitron Components, Inc.

SMD Power MOSFET
Transistor (N-Channel)
BSS123
SMD Power MOSFET Transistor (N-Channel)
Features
•
•
•
•
•
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Low On-Resistance:6Ω
Low input capacitance:20pF
Low output capacitance:9pF
Low threshole:2.8V
Fast switching speed:20nS
RoHS Compliance and Halogen Free
SOT-23
Application
•
•
•
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DC to DC converter
Cellular & PCMCIA card
Cordless telephone
Power management in portable and battery etc.
Mechanical Data
SOT-23, Plastic Package
Case:
Terminals:
Weight:
Solderable per MIL-STD-202G, Method 208
0.008 gram
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
BSS123
Unit
Marking Code
SA
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
± 20
V
Drain Current Continuous
170
mA
IDM
Drain Current Pulsed (Note 1)
680
mA
PD
Drain Power Dissipation (Note 2)
225
mW
Thermal Resistance, Junction to Ambient
556
° C/W
-55 to +150
°C
ID
RthJA
TJ,
TSTG
Storage Temperature Range
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON
Fax: (800)-TAITFAX
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
Conditions
TA=25° C
TA=25° C
Rev. B/AH
Page 1 of 6
SMD Power MOSFET Transistor (N-Channel)
BSS123
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gFS
Description
Min.
Typ.
Max.
Unit
Conditions
Drain-Source Breakdown Voltage
100
-
-
V
VGS=0V, ID=250µA
Gate Threshold Voltage
0.8
-
2.8
V
VDS=VGS, ID=1mA
-
-
50
nA
VDS=0V, VGS=20V
-
-
15
μA
-
-
60
μA
-
5.0
6.0
Ω
VGS=10V, ID=0.1A
8.0
-
-
mS
VDS=25V, ID=100mA
Unit
Conditions
pF
VDS=25V, VGS=0V,
f=1MHz
nS
VCC=30V, RGS=50Ω
IC=0.28A, VGS=10V
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
Static Drain-to-Source On-Resistance
Forward Transconductance
VDS=0V, VGS=100V,
TJ=25° C
VDS=0V, VGS=100V,
TJ=125° C
Dynamic Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
Description
Min.
Typ.
Max.
Ciss
Input Capacitance
-
20
-
Crss
Reverse Transfer Capacitance
-
4.0
-
Coss
Output Capacitance
-
9.0
-
ton
Switching Time Turn-On Time
-
20
-
toff
Switching Time Turn-Off Time
-
40
-
Min.
Typ.
Max.
Unit
Conditions
-
-
1.3
V
VGS=0V, ID=0.34A
Reverse Diode (T Ambient=25ºC)
Symbol
VSD
Description
Drain-Source Diode Forward Voltage
Note: (1) Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
(2) RF-5=1.0X0.75X0.062m.
Rev. B/AH
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Page 2 of 6
SMD Power MOSFET Transistor (N-Channel)
BSS123
Switching Time Test Circuit
Typical Characteristics Curves
Fig.2- Transfer Characteristics
Drain Current ID (A)
Drain Current ID (A)
Fig.1- Ohmic Region
Drain-Source Voltage VDS (V)
Gate-Source Voltage VGS (V)
Rev. B/AH
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Page 3 of 6
SMD Power MOSFET Transistor (N-Channel)
Fig.3- Temperature vs. Static Drain-Source
On-Resistance
Temperature T (° C)
Threshold Voltage VGS(th) (Normalized)
Static Drain Source On-Resistance IDS(ON)
(Normalized)
BSS123
Fig.4- Temperature vs. Gate Threshold Voltage
Temperature T (° C)
Marking Information:
Rev. B/AH
www.taitroncomponents.com
Page 4 of 6
SMD Power MOSFET Transistor (N-Channel)
BSS123
Dimensions in mm
1. Source
2. Gate
3. Drain
SOT-23
Ordering Information
BSS123 – 78 – RG70
Packing Code:
RG70: 7” reel in Tape and Reel,
Lead free and Halogen free
Factory Location Code
SMD Power MOSFET
Transistor (N-Channel)
Rev. B/AH
www.taitroncomponents.com
Page 5 of 6
SMD Power MOSFET Transistor (N-Channel)
BSS123
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: taitron@taitroncomponents.com
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
Rev. B/AH
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Page 6 of 6