TIP120 - Taitron Components, Inc.

Darlington Power Transistors (NPN)
TIP120/121/122
Darlington Power Transistors (NPN)
Features
• Designed for general-purpose amplifier and low speed
switching applications
• RoHS Compliant
TO-220
Mechanical Data
Case:
TO-220, Plastic Package
Terminals:
Weight:
Solderable per MIL-STD-202, Method 208
0.08 ounces, 2.24 grams
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
TIP120
TIP121
TIP122
Unit
VCBO
Collector-Base Voltage
60
80
100
V
VCEO
Collector-Emitter Voltage
60
80
100
V
VEBO
Emitter-Base Voltage
5.0
V
Collector Current Continuous
5.0
A
Collector Current Peak
8.0
A
Base Current
120
mA
Power Dissipation upto TC=25°C
65
W
Power Dissipation Derate above TC=25°C
0.52
W/° C
Power Dissipation upto TA=25°C
2.0
W
Power Dissipation Derate above TA=25°C
16
mW/° C
IC
ICM
IB
PD
RθJA
Thermal Resistance from Junction to Ambient in Free Air
62.5
° C /W
RθJC
Thermal Resistance from Junction to Case
1.92
° C /W
-65 to +150
°C
TJ, TSTG
Operating Junction and Storage Temperature Range
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON
Fax: (800)-TAITFA
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
Rev. A/AH 2008-06-13
Page 1 of 4
Darlington Power Transistors (NPN)
TIP120/121/122
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
*hFE
*VCEO(sus)
*VCE(sat)
*VBE(on)
ICEO
ICBO
IEBO
Description
Min.
Max.
Unit
1000
-
VCE=3V, IC=0.5A
1000
-
VCE=3V, IC=3A
TIP120
60
-
V
TIP121
80
-
V
TIP122
100
-
V
-
2.0
V
IC=3A, IB=12mA
-
4.0
V
IC=5A, IB=20mA
-
2.5
V
IC=3A, VCE=3V
TIP120
-
0.5
TIP121
-
0.5
TIP122
-
0.5
VCE=50V, IB=0
TIP120
-
0.2
VCB=60V, IE=0
TIP121
-
0.2
TIP122
-
0.2
-
2
4.0
-
-
200
D.C. Current Gain
Collector-Emitter Sustaining
Voltage
IC=100mA, IB=0
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Cut-off
Current
Collector-Base Cut-off
Current
Emitter-Base Cut-off Current
hfe
Small Signal Current Gain
Cob
Output Capacitance
ton
Turn on time
VCE=30V, IB=0
mA
mA
Turn off time
mA
pF
Typ. 0.4
Typ. 1.2
VCE=40V, IB=0
VCB=80V, IE=0
VCB=100V, IE=0
µS
toff
Conditions
VEB=5V, IC=0
IC=3A, VCE=4V,
f=1.0MHz,
VCB=10V, IE=0,
f=0.1MHz,
IC=3A, RL=10Ω,
IB1=IB2=12mA,
VEB(off)=5V
*Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Rev. A/AH 2008-06-13
www.taitroncomponents.com
Page 2 of 4
Darlington Power Transistors (NPN)
TIP120/121/122
Dimensions in inch (mm)
TO-220
Rev. A/AH 2008-06-13
www.taitroncomponents.com
Page 3 of 4
Darlington Power Transistors (NPN)
TIP120/121/122
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: [email protected]
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
Rev. A/AH 2008-06-13
www.taitroncomponents.com
Page 4 of 4