2N3903 - Taitron Components, Inc.

Small Signal General
Purpose Transistors (NPN)
2N3903/2N3904
Small Signal General Purpose Transistors (NPN)
Features
• NPN Silicon Epitaxial Transistor for Switching and
Amplifier Applications
• RoHS Compliance
TO-92
Mechanical Data
Case:
TO-92, Plastic Package
Terminals:
Weight:
Solderable per MIL-STD-202G, Method 208
0.18 gram
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
2N3903
2N3904
Unit
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6.0
V
Collector Current Continuous
200
mA
Power Dissipation at TA=25°C
625
mW
Derate above 25°C
5.0
mW/° C
Power Dissipation at TC=25°C
1.5
W
Derate above 25°C
12
mW/° C
RθJA
Thermal Resistance Junction to Ambient Air
200
° C/W
RθJC
Thermal Resistance Junction to Case
83.3
° C/W
-55 to +150
°C
IC
PD
PD
TJ ,TSTG
Operation and Storage Junction Temperature
Range
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON
Fax: (800)-TAITFAX
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
Rev. A/AH
Page 1 of 4
Small Signal General Purpose Transistors (NPN)
2N3903/2N3904
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
Description
2N3903
2N3904
Min.
Max.
Min.
Max.
Unit
Conditions
V(BR)CBO
Collector-Base Breakdown Voltage
60
-
60
-
V
IC=10µA, IE=0
V(BR)CEO
Collector-Emitter Breakdown Voltage
40
-
40
-
V
IC=1mA, IB=0
V(BR)EBO
Emitter-Base Breakdown Voltage
6.0
-
6.0
-
V
IE=10µA, IC=0
VCE(sat)*
Collector Emitter Saturation Voltage
-
0.2
-
0.2
-
0.3
-
0.3
VBE(sat)*
Base Emitter Saturation Voltage
0.65
0.85
0.65
0.85
-
0.95
-
0.95
Collector Cut–Off Current
-
50
-
50
nA
VEB=3V, VCE=30V
Base Cut–Off Current
-
50
-
50
nA
VEB=3V, VCE=30V
20
-
40
-
VCE=1V, IC=0.1mA
35
-
70
-
VCE=1V, IC=1mA
50
150
100
300
VCE=1V, IC=10mA
30
-
60
-
VCE=1V, IC=50mA
15
-
30
-
VCE=1V, IC=100mA
ICEX
IBL
hFE*
D.C. Current Gain
IC=10mA, IB=1mA
V
IC=50mA, IB=5mA
IC=10mA, IB=1mA
V
IC=50mA, IB=5mA
hfe
Small Signal Current Gain
50
200
100
400
hie
Input Impedance
1.0
8.0
1.0
10
kΩ
hre
Voltage Feedback Ratio
0.1
5.0
0.5
8.0
x10‫־‬
hoe
Output Admittance
1.0
40
1.0
40
μS
Current Gain-Bandwidth Product
250
-
300
-
MHz
fT
4
Cob
Output Capacitance
-
4.0
-
4.0
pF
Cib
Input Capacitance
-
8.0
-
8.0
pF
NF
Noise Figure
-
6.0
-
5.0
dB
Delay Time
-
35
-
35
nS
tr
Rise Time
-
35
-
35
nS
ts
Storage Time
-
175
-
200
nS
Fall Time
-
50
-
50
nS
td
tf
VCE=10V, IC=1mA
f=1KHz
VCE=10V, IC=1mA
f=1KHz
VCE=10V, IC=1mA
f=1KHz
VCE=10V, IC=1mA
f=1KHz
VCE=20V, IC=10mA,
f=100MHz
VCB=5V, IE=0
f=1MHz
VEB=0.5V, IC=0
f=1MHz
VCE=5V, IC=100µA,
Rs=1KΩ, f=1KHz
VCC=3V, VBE=0.5V
IC=10mA, IB1=1mA
VCC=3V, IC=10mA
IB1=IB2=1mA
Rev. A/AH
www.taitroncomponents.com
Page 2 of 4
Small Signal General Purpose Transistors (NPN)
2N3903/2N3904
*Pulse
Test: Pulse Width<300µs, Duty Cycle<2%
Dimensions in mm
TO-92
Rev. A/AH
www.taitroncomponents.com
Page 3 of 4
Small Signal General Purpose Transistors (NPN)
2N3903/2N3904
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: taitron@taitroncomponents.com
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
Rev. A/AH
www.taitroncomponents.com
Page 4 of 4