Small Signal General Purpose Transistors (NPN) 2N3903/2N3904 Small Signal General Purpose Transistors (NPN) Features • NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications • RoHS Compliance TO-92 Mechanical Data Case: TO-92, Plastic Package Terminals: Weight: Solderable per MIL-STD-202G, Method 208 0.18 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N3903 2N3904 Unit VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V Collector Current Continuous 200 mA Power Dissipation at TA=25°C 625 mW Derate above 25°C 5.0 mW/° C Power Dissipation at TC=25°C 1.5 W Derate above 25°C 12 mW/° C RθJA Thermal Resistance Junction to Ambient Air 200 ° C/W RθJC Thermal Resistance Junction to Case 83.3 ° C/W -55 to +150 °C IC PD PD TJ ,TSTG Operation and Storage Junction Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH Page 1 of 4 Small Signal General Purpose Transistors (NPN) 2N3903/2N3904 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description 2N3903 2N3904 Min. Max. Min. Max. Unit Conditions V(BR)CBO Collector-Base Breakdown Voltage 60 - 60 - V IC=10µA, IE=0 V(BR)CEO Collector-Emitter Breakdown Voltage 40 - 40 - V IC=1mA, IB=0 V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - 6.0 - V IE=10µA, IC=0 VCE(sat)* Collector Emitter Saturation Voltage - 0.2 - 0.2 - 0.3 - 0.3 VBE(sat)* Base Emitter Saturation Voltage 0.65 0.85 0.65 0.85 - 0.95 - 0.95 Collector Cut–Off Current - 50 - 50 nA VEB=3V, VCE=30V Base Cut–Off Current - 50 - 50 nA VEB=3V, VCE=30V 20 - 40 - VCE=1V, IC=0.1mA 35 - 70 - VCE=1V, IC=1mA 50 150 100 300 VCE=1V, IC=10mA 30 - 60 - VCE=1V, IC=50mA 15 - 30 - VCE=1V, IC=100mA ICEX IBL hFE* D.C. Current Gain IC=10mA, IB=1mA V IC=50mA, IB=5mA IC=10mA, IB=1mA V IC=50mA, IB=5mA hfe Small Signal Current Gain 50 200 100 400 hie Input Impedance 1.0 8.0 1.0 10 kΩ hre Voltage Feedback Ratio 0.1 5.0 0.5 8.0 x10־ hoe Output Admittance 1.0 40 1.0 40 μS Current Gain-Bandwidth Product 250 - 300 - MHz fT 4 Cob Output Capacitance - 4.0 - 4.0 pF Cib Input Capacitance - 8.0 - 8.0 pF NF Noise Figure - 6.0 - 5.0 dB Delay Time - 35 - 35 nS tr Rise Time - 35 - 35 nS ts Storage Time - 175 - 200 nS Fall Time - 50 - 50 nS td tf VCE=10V, IC=1mA f=1KHz VCE=10V, IC=1mA f=1KHz VCE=10V, IC=1mA f=1KHz VCE=10V, IC=1mA f=1KHz VCE=20V, IC=10mA, f=100MHz VCB=5V, IE=0 f=1MHz VEB=0.5V, IC=0 f=1MHz VCE=5V, IC=100µA, Rs=1KΩ, f=1KHz VCC=3V, VBE=0.5V IC=10mA, IB1=1mA VCC=3V, IC=10mA IB1=IB2=1mA Rev. A/AH www.taitroncomponents.com Page 2 of 4 Small Signal General Purpose Transistors (NPN) 2N3903/2N3904 *Pulse Test: Pulse Width<300µs, Duty Cycle<2% Dimensions in mm TO-92 Rev. A/AH www.taitroncomponents.com Page 3 of 4 Small Signal General Purpose Transistors (NPN) 2N3903/2N3904 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH www.taitroncomponents.com Page 4 of 4