2N6383 - Taitron Components, Inc.

Darlington Power Transistor
2N6383-2N6385 2N6648-2N6650
Darlington Power Transistor
NPN: 2N6383, 2N6384, 2N6385
PNP: 2N6648, 2N6649, 2N6650
Features
•
•
•
•
High Gain Dalington Performance
DC Current Gain hFE = 3000(Typ) @ IC = 5.0A
True Complementary Specifications
RoHS Compliant
TO-3
Mechanical Data
Case:
TO-3, Metal Can Package
Terminals:
Weight:
Solderable per MIL-STD-750
20 grams (approx)
Maximum Ratings (TC=25ºC unless noted otherwise)
Symbol
Description
2N6383
2N6648
2N6384
2N6649
2N6385
2N6650
Unit
VCBO
Collector-Base Voltage
40
60
80
V
VCEO
Collector-Emitter Voltage
40
60
80
V
VEBO
Emitter-Base Voltage
5
Collector Current (Continuous)
10
Collector Current (Peak)
15
IC
IB
PD
RθJC
TJ, TSTG
V
A
Base Current
0.25
A
Total Power Dissipation
at TC=25°C
100
W
Derate above TA=25°C
0.571
W/°C
1.75
°C /W
-65 to +200
°C
Thermal Resistance from
Junction to Case
Operating Junction and
Storage Temperature Range
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON
Fax: (800)-TAITFAX
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
Rev. A/CZ
Page 1 of 7
Darlington Power Transistor
2N6383-2N6385 2N6648-2N6650
Electrical Characteristics (TC=25ºC unless noted otherwise)
Symbol
VCEO(sus) *
ICEO
Description
Collector-Emitter
Sustaining Voltage
Collector Cut-off
Current
Min.
Max.
Unit
Conditions
2N6383, 2N6648
40
-
2N6384, 2N6649
60
-
V
IC=200mA, IB=0
2N6385, 2N6650
80
-
2N6383, 2N6648
-
1.0
mA
VCE=40V, IB=0
2N6384, 2N6649
-
1.0
mA
VCE=60V, IB=0
2N6385, 2N6650
-
1.0
mA
VCE=80V, IB=0
-
0.3
mA
VCE=40V, VBE(off)=1.5V
-
3.0
mA
VCE=40V, VBE(off)=1.5V,
TC=125°C
-
0.3
mA
VCE=60V, VBE(off)=1.5V
-
3.0
mA
VCE=60V, VBE(off)=1.5V,
TC=125°C
-
0.3
mA
VCE=80V, VBE(off)=1.5V
-
3.0
mA
VCE=80V, VBE(off)=1.5V,
TC=125°C
-
10
mA
VEB=5.0V, IC=0
1000
20000
2N6383, 2N6648
ICEX
Collector Cut-off
Current
2N6384, 2N6649
2N6385, 2N6650
IEBO
hFE*
VCE(sat) *
VBE(on) *
Emitter Cut-off Current
D.C. Current Gain
VCE=3.0V, IC=5.0A
-
VCE=3.0V, IC=10A
100
-
-
2.0
V
IC=5.0A, IB=10mA
-
3.0
V
IC=10A, IB=100mA
-
2.8
V
VCE=3.0V, IC=5.0A
4.5
V
VCE=3.0V, IC=10A
1000
-
-
VCE=5.0V, IC=1.0A,
f=1KHz
-
200
pF
VCB=10V, IE=0, f=1MHz
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
hfe
Small Signal Current Gain
Cob
Output Capacitance
*Pulse Test: Pulse Width =300µs, Duty Cycle ≤2%
Rev. A/CZ
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Page 2 of 7
Darlington Power Transistor
2N6383-2N6385 2N6648-2N6650
Power dissipation PD (W)
Power Derating Curve
Temperature TC (℃)
Equivalent Circuit
Rev. A/CZ
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Page 3 of 7
Darlington Power Transistor
2N6383-2N6385 2N6648-2N6650
Typical Characteristics Curves
Fig.2- Collector Saturation Region
DC Current Gain hFE
Collector-Emitter Voltage VCE (V)
Fig.1- DC Current Gain
Base Current IB (mA)
Collector Current IC (A)
Fig.4- Switching Time
Time t (µS)
Voltages (V)
Fig.3- “On” Voltages
Collector Current IC (A)
Collector Current IC (A)
Rev. A/CZ
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Page 4 of 7
Darlington Power Transistor
2N6383-2N6385 2N6648-2N6650
Active-Region Safe Operating Area (SOA)
There are two limitations on the power handling ability of a transistor: average junction temperature and
second breakdown safe operating area curves indicator. IC-VCE limits of the transistor that must be observed for
reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicator.
The data of SOA curve is base on TJ(PK) =200°C; TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(PK) ≤200°C. At high case temperatures, thermal
limitation will reduce the power that can be handled to values less than the limitations imposed by second
breakdown.
Collector Current IC (A)
Fig.5- Active-Region SOA
Collector-Emitter Voltage VCE (V)
Rev. A/CZ
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Page 5 of 7
Darlington Power Transistor
2N6383-2N6385 2N6648-2N6650
Dimensions in mm
TO-3
DIM
MIN.
MAX
A
38.75
39.96
B
19.28
22.23
C
7.96
9.28
D
0.92
1.09
E
1.38
1.62
F
29.90
30.40
G
10.67
11.18
J
16.64
17.30
K
11.18
12.19
L
25.20
26.67
M
3.88
4.36
Rev. A/CZ
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Page 6 of 7
Darlington Power Transistor
2N6383-2N6385 2N6648-2N6650
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: taitron@taitroncomponents.com
Http://www.taitroncomponents.com
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TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
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Tel: +86-21-5424-9942
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Rev. A/CZ
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Page 7 of 7