Darlington Power Transistor 2N6383-2N6385 2N6648-2N6650 Darlington Power Transistor NPN: 2N6383, 2N6384, 2N6385 PNP: 2N6648, 2N6649, 2N6650 Features • • • • High Gain Dalington Performance DC Current Gain hFE = 3000(Typ) @ IC = 5.0A True Complementary Specifications RoHS Compliant TO-3 Mechanical Data Case: TO-3, Metal Can Package Terminals: Weight: Solderable per MIL-STD-750 20 grams (approx) Maximum Ratings (TC=25ºC unless noted otherwise) Symbol Description 2N6383 2N6648 2N6384 2N6649 2N6385 2N6650 Unit VCBO Collector-Base Voltage 40 60 80 V VCEO Collector-Emitter Voltage 40 60 80 V VEBO Emitter-Base Voltage 5 Collector Current (Continuous) 10 Collector Current (Peak) 15 IC IB PD RθJC TJ, TSTG V A Base Current 0.25 A Total Power Dissipation at TC=25°C 100 W Derate above TA=25°C 0.571 W/°C 1.75 °C /W -65 to +200 °C Thermal Resistance from Junction to Case Operating Junction and Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/CZ Page 1 of 7 Darlington Power Transistor 2N6383-2N6385 2N6648-2N6650 Electrical Characteristics (TC=25ºC unless noted otherwise) Symbol VCEO(sus) * ICEO Description Collector-Emitter Sustaining Voltage Collector Cut-off Current Min. Max. Unit Conditions 2N6383, 2N6648 40 - 2N6384, 2N6649 60 - V IC=200mA, IB=0 2N6385, 2N6650 80 - 2N6383, 2N6648 - 1.0 mA VCE=40V, IB=0 2N6384, 2N6649 - 1.0 mA VCE=60V, IB=0 2N6385, 2N6650 - 1.0 mA VCE=80V, IB=0 - 0.3 mA VCE=40V, VBE(off)=1.5V - 3.0 mA VCE=40V, VBE(off)=1.5V, TC=125°C - 0.3 mA VCE=60V, VBE(off)=1.5V - 3.0 mA VCE=60V, VBE(off)=1.5V, TC=125°C - 0.3 mA VCE=80V, VBE(off)=1.5V - 3.0 mA VCE=80V, VBE(off)=1.5V, TC=125°C - 10 mA VEB=5.0V, IC=0 1000 20000 2N6383, 2N6648 ICEX Collector Cut-off Current 2N6384, 2N6649 2N6385, 2N6650 IEBO hFE* VCE(sat) * VBE(on) * Emitter Cut-off Current D.C. Current Gain VCE=3.0V, IC=5.0A - VCE=3.0V, IC=10A 100 - - 2.0 V IC=5.0A, IB=10mA - 3.0 V IC=10A, IB=100mA - 2.8 V VCE=3.0V, IC=5.0A 4.5 V VCE=3.0V, IC=10A 1000 - - VCE=5.0V, IC=1.0A, f=1KHz - 200 pF VCB=10V, IE=0, f=1MHz Collector-Emitter Saturation Voltage Base-Emitter On Voltage hfe Small Signal Current Gain Cob Output Capacitance *Pulse Test: Pulse Width =300µs, Duty Cycle ≤2% Rev. A/CZ www.taitroncomponents.com Page 2 of 7 Darlington Power Transistor 2N6383-2N6385 2N6648-2N6650 Power dissipation PD (W) Power Derating Curve Temperature TC (℃) Equivalent Circuit Rev. A/CZ www.taitroncomponents.com Page 3 of 7 Darlington Power Transistor 2N6383-2N6385 2N6648-2N6650 Typical Characteristics Curves Fig.2- Collector Saturation Region DC Current Gain hFE Collector-Emitter Voltage VCE (V) Fig.1- DC Current Gain Base Current IB (mA) Collector Current IC (A) Fig.4- Switching Time Time t (µS) Voltages (V) Fig.3- “On” Voltages Collector Current IC (A) Collector Current IC (A) Rev. A/CZ www.taitroncomponents.com Page 4 of 7 Darlington Power Transistor 2N6383-2N6385 2N6648-2N6650 Active-Region Safe Operating Area (SOA) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicator. IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicator. The data of SOA curve is base on TJ(PK) =200°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(PK) ≤200°C. At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Collector Current IC (A) Fig.5- Active-Region SOA Collector-Emitter Voltage VCE (V) Rev. A/CZ www.taitroncomponents.com Page 5 of 7 Darlington Power Transistor 2N6383-2N6385 2N6648-2N6650 Dimensions in mm TO-3 DIM MIN. MAX A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 0.92 1.09 E 1.38 1.62 F 29.90 30.40 G 10.67 11.18 J 16.64 17.30 K 11.18 12.19 L 25.20 26.67 M 3.88 4.36 Rev. A/CZ www.taitroncomponents.com Page 6 of 7 Darlington Power Transistor 2N6383-2N6385 2N6648-2N6650 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/CZ www.taitroncomponents.com Page 7 of 7