N-Channel Enhancement Mode Field Effect Transistor 2N7000A N-Channel Enhancement Mode Field Effect Transistor Features • • • • • High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability RoHS compliance TO-92 Mechanical Data Case: TO-92, Plastic Package Terminals: Weight: Solderable per MIL-STD-202G, Method 208 0.18 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N7000A Unit VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V Continuous 500 mA Pulsed (Note 1) 2000 mA ID Drain Current IDP PD Drain Power Dissipation 625 mW TJ Junction Temperature 150 °C -55 to +150 °C TSTG Storage Temperature Range Note 1: Pulse Width<10µs, Duty Cycle<1% TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH Page 1 of 8 N-Channel Enhancement Mode Field Effect Transistor 2N7000A Equivalent Circuit This transistor is electrostatic sensitive device. Please handle with caution. Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description Min. Typ. Max. Unit Conditions BVDSS Drain-Source Breakdown Voltage 60 - - V VGS=0V, ID=10µA IDSS Zero Gate Voltage Drain Current - - 1 µA VDS=60V, VGS=0V IGSSF Gate- Body Leakage, Forward - - 100 nA VGS=20V, VDS=0V IGSSR Gate- Body Leakage, Reverse - - -100 nA VGS=-20V, VDS=0V Min. Typ. Max. Unit Conditions 1.1 1.8 2.3 V VDS=VGS, ID=250µA - 1.2 1.8 Ω VGS=10V, ID=500mA - 1.5 2.1 Ω VGS=5V, ID=50mA - 0.6 0.9 V VGS=10V, ID=500mA - 0.075 0.105 V VGS=5V, ID=50mA On State Drain Current 500 - - mA VGS=10V, VDS≥2VDS(ON) gFS Forward Transconductance 200 580 - mS VDS=10V, ID=500mA VSD Drain-Source Diode Forward Voltage - 0.78 1.15 V VGS=0V, IS=200mA(Note 1) On Characteristics (Note 2) Symbol Vth Description Gate Threshold Voltage RDS(ON) Drain-Source ON Resistance VDS(ON) Drain-Source ON Voltage ID(ON) Rev. A/AH www.taitroncomponents.com Page 2 of 8 N-Channel Enhancement Mode Field Effect Transistor 2N7000A Note 2: Pulse Test: Pulse Width<80µs, Duty Cycle<1% Dynamic Characteristics Symbol Description Min. Typ. Max. Unit CISS Input Capacitance - 47.1 - pF CRSS Reverse Transfer Capacitance - 3.5 - pF COSS Output Capacitance - 8.8 - pF Turn-on Time - 8.8 nS Turn-off Time - 14.8 nS ton toff Switching Time Conditions VDS=25V, VGS=0V, f=1MHz VDD=30V, RL=155Ω, ID=190mA, VGS=10V Switching Time Test Circuit Rev. A/AH www.taitroncomponents.com Page 3 of 8 N-Channel Enhancement Mode Field Effect Transistor 2N7000A Typical Characteristics Curves Fig.2- RDS(ON) - ID Drain Current ID (A) Drain-Source ON Resistance RDS(ON) (Ω) Fig.1- ID - VDS Drain-Source Voltage VDS (V) Drain Current ID (A) Fig.4- ID - VGS Drain Current ID (A) Drain-Source ON Resistance RDS(ON) (Ω) Fig.3- RDS(ON) - TJ Junction Temperature TJ (° C) Gate-Source Voltage VGS (V) Rev. A/AH www.taitroncomponents.com Page 4 of 8 N-Channel Enhancement Mode Field Effect Transistor Fig.6- Is - VSD Fig.5- Vth - TJ Reverse Drain Current IS (A) Gate-Source Threshold Voltage Vth (V) 2N7000A Junction Temperature TJ (° C) Body Diode Forward Voltage VSD (V) Fig.7- C - VDS Capacitance C (pF) Gate-Source Voltage VGS (V) Fig.8- VGS - Qg Drain Source Voltage VDS (V) Gate Charge Qg (nC) Rev. A/AH www.taitroncomponents.com Page 5 of 8 N-Channel Enhancement Mode Field Effect Transistor 2N7000A Fig.10- PD - TA Drain Current ID (A) Drain Power Dissipation PD (mW) Fig.9- SOA Drain Source Voltage VDS (V) Ambient Temperature TA (° C) Rev. A/AH www.taitroncomponents.com Page 6 of 8 N-Channel Enhancement Mode Field Effect Transistor 2N7000A Dimensions in mm TO-92 Rev. A/AH www.taitroncomponents.com Page 7 of 8 N-Channel Enhancement Mode Field Effect Transistor 2N7000A How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH www.taitroncomponents.com Page 8 of 8