6 Pin Dip Phototransistor Photocoupler 4N25 6 Pin Dip Phototransistor Photocoupler Features • • • • • High isolation voltage between input and output (Viso=5000Vrms) Creepage distance>7.62mm Operation temperature up to +110° C Compact dual-in-line package RoHS compliant Applications • Power supply regulators • Digital logic inputs • Microprocessor inputs TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2008-09-25 Page 1 of 8 6 Pin Dip Phototransistor Photocoupler 4N25 Absolute Maximum Ratings (Ta=25°C) Input Parameter Symbol Rating Unit IF 50 mA Peak Forward Current (t=10µS) IFM 1 A Reverse Voltage VR 6 V 70 mW 3.8 mW/° C Symbol Rating Unit Collector-Emitter Voltage VCEO 80 V Collector-Base Voltage VCBO 80 V Emitter-Collector Voltage VECO 7 V Emitter-Base Voltage VEBO 7 V 150 mW 9.0 mW/° C Symbol Rating Unit Total Power Dissipation Ptot 200 mW Isolation Voltage (Note 1) Viso 5000 Vrms Operating Temperature Topr -55 to +110 °C Storage Temperature Tstg -55 to +125 °C Soldering Temperature (For 10 Seconds) Tsol 260 °C Forward Current Power Dissipation (TA=25°C) Derating Factor (above 100° C) Output Parameter Power Dissipation (TA=25°C) Derating Factor (above 100° C) Parameter PD PD Note: 1. AC for 1 minute, R.H.=40~60% R.H. In this test, pins 1, 2 & 3 are shorted together, and pins 4, 5 & 6 are shorted together. Rev. A/AH 2008-09-25 www.taitroncomponents.com Page 2 of 7 6 Pin Dip Phototransistor Photocoupler 4N25 Electrical Characteristics (Ta=25°C unless specified otherwise) Input Parameter Symbol Min. Typ.* Max. Unit Forward Voltage VF - 1.2 1.5 V IF=10mA Reverse Current IR - - 10 µA VR=6V Input Capacitance Cin - 30 - pF V=0, f=1MHz Symbol Min. Typ.* Max. Unit Collector-Base Dark Current ICBO - - 20 nA VCB=10V Collector-Emitter Dark Current ICEO - - 50 nA VCE=10V, IF=0mA Collector-Emitter Breakdown Voltage BVCEO 80 - - V IC=1mA Collector-Base Breakdown Voltage BVCBO 80 - - V IC=0.1mA Emitter-Collector Breakdown Voltage BVECO 7 - - V IE=0.1mA Emitter-Base Breakdown Voltage BVEBO 7 - - V IE=0.1mA CCE - 8 - pF VCE=0V, f=1MHz Output Parameter Collector-Emitter Capacitance Condition Condition Transfer Characteristics (Ta=25°C unless specified otherwise) Parameter Symbol Min. Typ.* Max. Unit CTR 20 - - % IF=10mA, VCE=10V VCE(sat) - - 0.5 V IF=50mA, IC=2mA Isolation Resistance RIO 10¹¹ - - Ω VIO=500Vdc Input-Output Capacitance CIO - 0.2 - pF VIO=0, f=1MHz Turn-on Time Ton - 3 10 µS VCC=10V, IF=10mA, RL=100Ω Turn-off Time Toff - 3 10 µS VCC=10V, IF=10mA, RL=100Ω Current Transfer Ratio Collector-Emitter Saturation Voltage Condition *Typical values at Ta=25°C Rev. A/AH 2008-09-25 www.taitroncomponents.com Page 3 of 7 6 Pin Dip Phototransistor Photocoupler Forward Current IF (mA) Flg.1 Forward Current vs. Forward Voltage Flg.3 Current Transfer Ratio vs. Ambient Temperature Ambient Temperature Ta (°C) Flg.5 Current Transfer Ratio (Saturated) vs. Base-Emitter Resistance Flg.2 Current Transfer Ratio vs. Forward Current Forward Current IF (mA) Flg.4 Current Transfer Ratio (Saturated) vs. Base-Emitter Resistance Base-Emitter Resistance RBE (kΩ) Flg.6 Dark Current vs. Ambient Temperature Collector Dark Current ICEO (nA) Normalized Current Transfer Ratio, CTR Normalized Current Transfer Ratio, CTR Forward Voltage VF (V) Normalized Current Transfer Ratio, CTR Typical Performance Curves Normalized Current Transfer Ratio, CTR 4N25 Base-Emitter Resistance RBE (kΩ) Ambient Temperature Ta (°C) Rev. A/AH 2008-09-25 www.taitroncomponents.com Page 4 of 7 6 Pin Dip Phototransistor Photocoupler Flg.7 Collector-Emitter Saturation Voltage vs. Collector Current Flg.8 Switching Time vs. Load Resistance Switching Speed (µS) Collector-Emitter Saturation Voltage VCE(sat) (V) 4N25 Load Resistance RL (kΩ) Collector Current IC (mA) Flg.10 Turn-off Time vs. Base-Emitter Resistance Normalized Turn-on Time, ton Normalized Turn-off Time, toff Flg.9 Turn-on Time vs. Base-Emitter Resistance Base-Emitter Resistance RBE (kΩ) Base-Emitter Resistance RBE (kΩ) Rev. A/AH 2008-09-25 www.taitroncomponents.com Page 5 of 7 6 Pin Dip Phototransistor Photocoupler 4N25 Package Dimensions in mm Rev. A/AH 2008-09-25 www.taitroncomponents.com Page 6 of 7 6 Pin Dip Phototransistor Photocoupler 4N25 Mounting Pad Layout in mm Packing Quantity Information: Quantity PCS per Tube Tube 65/Tube How to contact us US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 247-2232 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONETS INCORPORATED E REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONETS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-54249942 Fax: +86-21-5424-9931 Rev. 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