Power Transistor (NPN) 2N3055 Power Transistor (NPN) Features • General Purpose Switching and Amplifier Applications • RoHS Compliant Mechanical Data Case: TO-3, Metal Can Package Terminals: Weight: TO-3 Solderable per MIL-STD-202, Method 208 20 grams (approx) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N3055 Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VCER Collector-Emitter Voltage (RBE=100Ω) 70 V VEBO Emitter-Base Voltage 7 V IC Collector Current Continuous 15 A IB Base Current 7 A 115 W Derate above TC=25°C 0.657 W/° C Thermal Resistance from Junction to Case 1.52 ° C /W -65 to +200 °C Total Power Dissipation at TC=25°C PD RθJC TJ, TSTG Operating Junction and Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Rev. A/AH Tel: (800)-TAITRON Fax: (800)-TAITFAX Page 1 of 4 (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Power Transistor (NPN) 2N3055 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description Min. Max. Unit Conditions VCEO(sus) * Collector-Emitter Sustaing Voltage 60 V IC=200mA, IB=0 VCER(sus) * Collector-Emitter Sustaing Voltage 70 V IC=200mA, RBE=100Ω hFE* VCE(sat) * VBE(on) * ICEX 20 70 VCE=4V, IC=4A 5 - VCE=4V, IC=10A - 1.1 V IC=4A, IB=400mA - 3.0 V IC=10A, IB=3.3A - 1.5 V VCE=4V, IC=4A - 1.0 mA - 5.0 mA D.C. Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Emitter Cut-off Current VCE=100V, VBE=(off)=1.5V VCE=100V, VBE=(off)=1.5V, TC=150° C ICEO Collector-Emitter Cut-off Current - 0.7 mA VCE=30V, IB=0 IEBO Emitter-Base Cut-off Current - 5.0 mA VBE=7V, IC=0 IS/b Second Breakdown Collector Current with Base Forward Biased 2.87 - A fT Current-Gain Bandwidth Product 2.5 - hfe Small Signal Current Gain 15 120 f Small Signal Current Gain Cut-off Frequency 10 - hfe MHz VCE=40V, t=1.0S, Nonrepetitive VCE=10V, IC=0.5A, f=1MHz VCE=4V, IC=1A, f=1KHz KHz VCE=4V, IC=1A, f=1KHz *Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Rev. A/AH www.taitroncomponents.com Page 2 of 4 Power Transistor (NPN) 2N3055 Dimensions in mm TO-3 Rev. A/AH www.taitroncomponents.com Page 3 of 4 Power Transistor (NPN) 2N3055 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH www.taitroncomponents.com Page 4 of 4