MMBT9012 - Taitron Components, Inc.

SMD General Purpose
Transistor (PNP)
MMBT9012
SMD General Purpose Transistor (PNP)
Features
 PNP Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
Mechanical Data
Case:
SOT-23, Plastic Package
Terminals:
Weight:
SOT-23
Solderable per MIL-STD-202G, Method 208
0.008 gram
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
MMBT9012
Unit
Conditions
VCEO
Collector-Emitter Voltage
-20
V
VCBO
Collector-Base Voltage
-40
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current
-0.5
A
225
mW
TA=25 ˚C
PD
Total Device Power Dissipation (Note 1)
1.8
mW/°C
Derate above 25 ˚C
Thermal Resistance, Junction to Ambient
556
°C /W
Total Device Power Dissipation, Alumina Substrate
(Note 2)
300
mW
TA=25 ˚C
2.4
mW/°C
Derate above 25 ˚C
Thermal Resistance, Junction to Ambient
417
°C /W
Junction Temperature
-55 to +150
°C
Storage Temperature Range
-55 to +150
°C
RθJA
PD
RθJA
TJ
TSTG
Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.)
2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina.
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON
Fax: (800)-TAITFAX
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
Rev. A/NX
Page 1 of 3
SMD General Purpose Transistor (PNP)
MMBT9012
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Off Characteristics
Symbol
Description
Min.
Max.
Unit
Conditions
V(BR)CEO
Collector-Emitter Breakdown Voltage
-20
-
V
IC=-0.1mAdc, IB=0
V(BR)CBO
Collector-Base Breakdown Voltage
-40
-
V
IC=-0.1mAdc, IE=0
V(BR)EBO
Emitter-Base Breakdown Voltage
-5.0
-
V
IE=-0.1mAdc, IC=0
ICBO
Collector Cut-off Current
-
-0.15
µA
VCB=-35V, IE=0
IEBO
Emitter Cut-off Current
-
-0.15
µA
VEB=-4.0V, IC=0
Min.
Max.
Unit
Conditions
100
600
-
VCE=-1.0Vdc, IC=-50mAdc
-
-0.6
Vdc
IC=-500mAdc, IB=-50mAdc
On Characteristics
-Symbol
hFE
VCE(sat)
Description
D.C. Current Gain
Collector-Emitter Saturation Voltage
Classification Of hFE
Rank
P
Q
R
S
Range
100-200
150-300
200-400
300-600
Marking
12P
12Q
12R
12S
Rev. A/NX
www.taitroncomponents.com
Page 2 of 3
SMD General Purpose Transistor (PNP)
MMBT9012
Dimensions in mm
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: [email protected]
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
Rev. A/NX
www.taitroncomponents.com
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