BC807-16 - Taitron Components, Inc.

SMD General Purpose
Transistor (PNP)
BC807-16/BC807-25/BC807-40
SMD General Purpose Transistor (PNP)
Features
• General purpose amplifier applications
• PNP epitaxial silicon, planar design
• RoHS compliance
Mechanical Data
Case:
SOT-23
SOT-23, Plastic Package
Terminals:
Solderable per MIL-STD-750, Method 2026
Weight:
0.008 gram
Marking Information
Marking Code
BC807-16
BC807-25
BC807-40
7A
7B
7C
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
Value
Unit
Conditions
VCEO
Collector-Emitter Voltage
-45
V
VCBO
Collector-Base Voltage
-50
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current
-500
mA
PD
Total Device Power Dissipation
330
mW
Note 1
RθJA
Thermal Resistance, Junction to Ambient
375
°C /W
Note 1
RθJL
Thermal Resistance, Junction to Lead
220
°C /W
-55 to +150
°C
TJ, TSTG
Junction and Storage, Temperature Range
Note: 1. Transistor mounted on FR-5 board minimum pad mounting conditions.
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON
Fax: (800)-TAITFAX
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
Rev. A/AH
Page 1 of 5
SMD General Purpose Transistor (PNP)
BC807-16/BC807-25/BC807-40
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Off Characteristics
Symbol
Description
Min.
Max.
Unit
Conditions
V(BR)CEO
Collector-Emitter Breakdown Voltage
-45
-
V
IC=-10mA, IB=0
V(BR)CBO
Collector-Base Breakdown Voltage
-50
-
V
IC=-10µA, VEB=0
V(BR)EBO
Emitter-Base Breakdown Voltage
-5.0
-
V
IE=-1µA, IC=0
-
-100
nA
VEB=-5V
-
-100
nA
VCB=-20V, IE=0, TJ=25°C
-
-5
µA
Min.
Max.
Unit
100
250
VCE=-1V, IC=-100mA
40
-
VCE=-1V, IC=-500mA
160
400
IEBO
Emitter-Base Cut-off Current
ICBO
Collector Cut-off Current
VCB=-20V, IE=0,
TJ=150°C
On Characteristics
Symbol
Description
BC807-16
hFE
BC807-25
D.C. Current Gain
BC807-40
Conditions
VCE=-1V, IC=-100mA
-
40
-
VCE=-1V, IC=-500mA
250
600
VCE=-1V, IC=-100mA
40
-
VCE=-1V, IC=-500mA
VCE(sat)
Collector-Emitter Saturation Voltage
-
-0.7
V
IC=-500mA, IB=-50mA
VBE(on)
Base-Emitter On Voltage
-
-1.2
V
IC=-500mA, VCE=-1V
Description
Min.
Typ.
Unit
Conditions
Current Gain-Bandwidth Product
100
-
MHz
VCE=-5V, IC=-10mA,
f=100MHz
-
7.0
pF
VCB=-10V, IE=0, f=1MHz
Small-signal Characteristics
Symbol
fT
COBO
Output Capacitance
Rev. A/AH
www.taitroncomponents.com
Page 2 of 5
SMD General Purpose Transistor (PNP)
BC807-16/BC807-25/BC807-40
Typical Characteristics Curves
Fig.2- BC807-25 Typical hFE vs. IC
DC Current Gain hFE
DC Current Gain hFE
Fig.1- BC807-16 Typical hFE vs. IC
Collector Current IC (mA)
Collector Current IC (mA)
Fig.4- Typical Capacitance
Capacitance C (pF)
DC Current Gain hFE
Fig.3- BC807-40 Typical hFE vs. IC
Collector Current IC (mA)
Reverse Voltage VR (V)
Rev. A/AH
www.taitroncomponents.com
Page 3 of 5
SMD General Purpose Transistor (PNP)
BC807-16/BC807-25/BC807-40
Dimensions in inch (mm)
SOT-23
Rev. A/AH
www.taitroncomponents.com
Page 4 of 5
SMD General Purpose Transistor (PNP)
BC807-16/BC807-25/BC807-40
Mounting Pad Layout in inch (mm)
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: [email protected]ponents.com
Http://www.taitroncomponents.com
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BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
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RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
Rev. A/AH
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