SMD General Purpose Transistor (PNP) BC807-16/BC807-25/BC807-40 SMD General Purpose Transistor (PNP) Features • General purpose amplifier applications • PNP epitaxial silicon, planar design • RoHS compliance Mechanical Data Case: SOT-23 SOT-23, Plastic Package Terminals: Solderable per MIL-STD-750, Method 2026 Weight: 0.008 gram Marking Information Marking Code BC807-16 BC807-25 BC807-40 7A 7B 7C Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Value Unit Conditions VCEO Collector-Emitter Voltage -45 V VCBO Collector-Base Voltage -50 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -500 mA PD Total Device Power Dissipation 330 mW Note 1 RθJA Thermal Resistance, Junction to Ambient 375 °C /W Note 1 RθJL Thermal Resistance, Junction to Lead 220 °C /W -55 to +150 °C TJ, TSTG Junction and Storage, Temperature Range Note: 1. Transistor mounted on FR-5 board minimum pad mounting conditions. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH Page 1 of 5 SMD General Purpose Transistor (PNP) BC807-16/BC807-25/BC807-40 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description Min. Max. Unit Conditions V(BR)CEO Collector-Emitter Breakdown Voltage -45 - V IC=-10mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage -50 - V IC=-10µA, VEB=0 V(BR)EBO Emitter-Base Breakdown Voltage -5.0 - V IE=-1µA, IC=0 - -100 nA VEB=-5V - -100 nA VCB=-20V, IE=0, TJ=25°C - -5 µA Min. Max. Unit 100 250 VCE=-1V, IC=-100mA 40 - VCE=-1V, IC=-500mA 160 400 IEBO Emitter-Base Cut-off Current ICBO Collector Cut-off Current VCB=-20V, IE=0, TJ=150°C On Characteristics Symbol Description BC807-16 hFE BC807-25 D.C. Current Gain BC807-40 Conditions VCE=-1V, IC=-100mA - 40 - VCE=-1V, IC=-500mA 250 600 VCE=-1V, IC=-100mA 40 - VCE=-1V, IC=-500mA VCE(sat) Collector-Emitter Saturation Voltage - -0.7 V IC=-500mA, IB=-50mA VBE(on) Base-Emitter On Voltage - -1.2 V IC=-500mA, VCE=-1V Description Min. Typ. Unit Conditions Current Gain-Bandwidth Product 100 - MHz VCE=-5V, IC=-10mA, f=100MHz - 7.0 pF VCB=-10V, IE=0, f=1MHz Small-signal Characteristics Symbol fT COBO Output Capacitance Rev. A/AH www.taitroncomponents.com Page 2 of 5 SMD General Purpose Transistor (PNP) BC807-16/BC807-25/BC807-40 Typical Characteristics Curves Fig.2- BC807-25 Typical hFE vs. IC DC Current Gain hFE DC Current Gain hFE Fig.1- BC807-16 Typical hFE vs. IC Collector Current IC (mA) Collector Current IC (mA) Fig.4- Typical Capacitance Capacitance C (pF) DC Current Gain hFE Fig.3- BC807-40 Typical hFE vs. IC Collector Current IC (mA) Reverse Voltage VR (V) Rev. A/AH www.taitroncomponents.com Page 3 of 5 SMD General Purpose Transistor (PNP) BC807-16/BC807-25/BC807-40 Dimensions in inch (mm) SOT-23 Rev. A/AH www.taitroncomponents.com Page 4 of 5 SMD General Purpose Transistor (PNP) BC807-16/BC807-25/BC807-40 Mounting Pad Layout in inch (mm) How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH www.taitroncomponents.com Page 5 of 5