PTI-R5C-3333 - Taitron Components, Inc.

5mm Round Phototransistor
PTI-R5C-3333
5mm Round Phototransistor (T-1 3/4)
Features
• Fast response time
• High sensitivity
• RoHS compliance
T-1 3/4
Descriptions
• It is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard Ф5mm
package.
• Water clear epoxy makes it more sensitive to be visible and near infrared radiation.
Applications
• Infrared applied system
• Camera
• Cockroach catcher
Device Selection Guide
Chip
Part No.
PTI-R5C-3333
Material
Silicon
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Lens Color
Water Clear
Rev. A/CZ
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5mm Round Phototransistor
PTI-R5C-3333
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
V
Emitter-Collector Voltage
VECO
5
V
Collector Power Dissipation
PC
75
mW
Collector Current
IC
20
mA
Operating Temperature
Topr
-25 ~ +85
°C
Storage Temperature
Tstg
-40 ~ +85
°C
Lead Soldering Temperature*
Tsol
260
°C
* Soldering time≦5 seconds.
Electro-Optical Characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Collector-Emitter Breakdown Voltage
BVCEO
30
-----
-----
V
IC=100μA, Ee=0mW/cm2
Emitter-Collector Breakdown Voltage
BVECO
5
-----
-----
V
IC=100μA, Ee=0mW/cm2
Collector-Emitter Saturation Voltage
VCE(sat)
-----
-----
0.4
V
IC=2mA, Ee=1mW/cm2
Collector Dark Current
ICEO
-----
-----
100
nA
VCE=20V, Ee=0mW/cm2
On State Collector Current
IC(ON)
0.7
4.0
-----
mA
VCE=5V, Ee=1mW/cm2
Peak Sensitivity Wavelength
λp
-----
940
-----
nm
-----
Spectral Bandwidth Range
λ0.5
400
-----
1100
nm
-----
Rise Time
tr
----
15
----
μs
Fall Time
tf
----
15
----
μs
VCE=5V
IC=1mA
RL=1000Ω
Rev. A/CZ
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5mm Round Phototransistor
PTI-R5C-3333
Typical Electro-Optical Characteristics Curves
Fig.2- Collector Dark Current vs.
Ambient Temperature
Collector Dark Current ICEO (A)
Collector Power Dissipation Pc (mW)
Fig.1- Collector Power Dissipation vs.
Ambient Temperature
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
Fig.4- Collector Current vs. Irradiance
Collector Current IC (mA)
Relative Collect Current (%)
Fig.3- Relative Collector Current vs.
Ambient Temperature
Ambient Temperature Ta (°C)
Irradiance Ee (mW/cm2)
Rev. A/CZ
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5mm Round Phototransistor
PTI-R5C-3333
Fig.6- Collector Current vs.
Collector-Emitter Voltage
Collector Current IC (mA)
Relative Spectral Sensitivity
Fig.5- Spectral Sensitivity
Collector-Emitter Voltage VCE (V)
Wavelength λ (nm)
Ranks
Parameter
Symbol
Min
Max
0.70
1.90
1.14
2.60
1.77
3.61
K
2.67
5.07
L
4.18
7.07
G
H
J
IC(ON)
Unit
mA
Test Condition
VCE=5V
Ee=1mW/cm2
Rev. A/CZ
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5mm Round Phototransistor
PTI-R5C-3333
Package Outline Dimensions (Unit=mm)
Note: The tolerances unless mentioned is ±0.25mm.
Packing Quantity Specification
Packing Type
PCS per Bag
PCS Per Inner Box
PCS Per Carton
Bulk
500
2,500
25,000
Rev. A/CZ
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5mm Round Phototransistor
PTI-R5C-3333
Ordering Information
PTI – R 5 C–3333 – 92– BL
Lead Free Bag or Box
Factory Location Code
Frame Structure Code
Water Clear
Size in mm
Round
Taitron Phototransistor
Label Format
Rev. A/CZ
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5mm Round Phototransistor
PTI-R5C-3333
How to contact us
US HEADQUARTER
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: [email protected]
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONETS INCORPORATED E REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001
BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONETS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’AN ROAD, SUITE 1503, SHANGHAI 200052, CHINA.
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
Rev. A/CZ
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