WILLAS FM120-M+ THRU 2SK3019TT1 FM1200-M+ SOT-523 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline N-channel MOSFET Features FEATURES • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H z Low on-resistance • Low profile surface mounted application in order to SOT-523 optimize board space. z Fast switching speed 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) z Low voltage drive makes this device ideal for portable equipment • High current capability, low forward voltage drop. z • High Easily designed drive circuits surge capability. 1 Guardring for overvoltage protection. • 1. GATE z Easy to parallel • Ultra high-speed switching. 2. SOURCE z Pb-Free package is available • Silicon epitaxial planar chip, metal silicon junction. 3. DRAIN RoHS product for packing code suffix ”G” of parts meet environmental standards • Lead-free 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Halogen free product for packing code suffix “H” • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Equivalent circuit Mechanical data Marking: KN • Epoxy : UL94-V0 rated flame retardant MOSFET RATINGS Molded plastic, SOD-123H(Ta = 25°C unless otherwise noted) • Case : MAXIMUM 0.031(0.8) Typ. , Units Symbol Parameter Value • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 VDS 30 Drain-Source Voltage • Polarity : Indicated by cathode band Gate-Source Voltage VGSS • Mounting Position : Any Continuous Drain Current ID • Weight : Approximated 0.011 gram Thermal Resistance, Junction-to-Ambient RθJA Power Dissipation RATINGS V 0.1 A VRRM VRMS Symbol Maximum DC Blocking Voltage VDC Off Characteristics Maximum Average Forward Rectified Current ℃ /W 0.15 W 150 ℃ ℃ -55~+150 IO 20 30 21 Test14Condition 20 30 Drain-Source Breakdown Voltage VDS Zero Gate Voltage Drain Current IDSSIFSM VDS =30V,VGS = 0V Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Gate –Source leakage current Typical Thermal Resistance (Note 2) VGS(th)CJ TJ Operating Temperature Range Storage Temperature Range TSTG Drain-Source On-Resistance RDS(on) CHARACTERISTICS Forward Transconductance Maximum Forward Voltage at 1.0A DC VF @T A=125℃ Ciss Capacitance 50 60 80 10 100 115 150 120 200 Volts 28 35 70 Max 105 Units Volts 50 56 Typ 140 40 42 Min 200 Volts Reverse Transfer Capacitance 80 100 1.0 VGS = 0V, ID = 10µA 30 40 120 0.8 -55 to +125 Amps - 65 to +175 VGS =2.5V,ID =1mA 1 µA Amps ±1 µA ℃/W 1.5 V PF 8 Ω 13 Ω -55 to +150 VGS = 4V, ID = 10mA 150 V 30 VDS = 3V, ID =100µA VDS =3V, ID = 10mA 0.50 0.70 20 0.85 mS 0.9 0.5 IR 10 ℃ ℃ pF 9 pF Crss 4 pF td(on) 15 ns VGS =5V, VDD =5V, 35 ns ID =10mA, Rg=10Ω, RL=500Ω, 80 ns 80 ns Coss VDS =5V,VGS =0V,f =1MHz 0.92 Volts 13 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 60 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT gFS Dynamic Characteristics* Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Input Capacitance 40 IGSSRΘJA VGS =±20V, V DS = 0V Typical Junction Capacitance (Note 1) Gate Threshold Voltage Output NOTES: Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS12(Ta=25℃ 13 unless 14 otherwise 15 16specified) 18 Maximum RMS Voltage Parameter ±20 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Recurrent Peak Reverse Voltage V 833 Ratings at 25℃ ambient temperature unless otherwise specified. Temperature TJ phase halfJunction Single wave, 60Hz, resistive of inductive load. For T capacitive load, derate current by 20% Storage Temperature stg MOSFET Marking Code 0.031(0.8) Typ. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS PD 0.040(1.0) 0.024(0.6) mAmps Switching Characteristics* Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 2012-06 tr td(off) tf * These parameters have no way to verify. 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2N7002T 2SK3019TT1 THRU FM1200-M+ SOT-523 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Typical Characteristics Package outline Features • Batch process design, excellent power dissipation offers Characteristics better reverse leakageOutput current and thermal resistance. 200 T =25 ℃ 3.0V mounted application in order to • Low profilea surface4.0V optimize Pulsed board space. 3.5V efficiency. • Low power loss, high 160 capability, low forward voltage drop. • High current • High surge capability. z • Guardring for overvoltage protection. 120 z • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. 2.5V • Lead-free parts meet environmental standards of 80 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Transfer Characteristics SOD-123H 200 VDS=3V 100 2.0V 0.146(3.7) 0.130(3.3) 30 0.071(1.8) 0.056(1.4) 10 0.040(1.0) 0.024(0.6) GS 1 0.031(0.8) Typ. 0 1 0.031(0.8) Typ. 3 2 GATE TO SOURCE VOLTAGE DS • Polarity : Indicated by cathode band • Mounting Position : Any RDS(ON) —— • Weight50: Approximated 0.011 gram T =25℃ Pulsed 0.012(0.3) Typ. 3 • Epoxy : UL94-V0 rated flame retardant V =1.5V • Case : 0Molded plastic, SOD-123H 0 1 2 3 4 ,5 • Terminals :Plated terminals, solderable per MIL-STD-750 DRAIN TO SOURCE VOLTAGE V (V) Method 2026 Ta=25℃ (mA) ID DRAIN CURRENT (mA) ID DRAIN CURRENT 40 Mechanical data Pb Free Product VGS Dimensions in inches and (millimeters) ID RDS(ON) —— VGS 15 Ta=25℃ a Pulsed Pulsed 30 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 12 RDS(ON) 10 RATINGS VGS=2.5V Marking Code VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current IO IFSM Maximum Recurrent Peak Reverse Voltage VGS=4V 3 Peak Forward Surge Current 8.3 ms single half sine-wave 1 3 1 load (JEDEC superimposed on rated method) 100 CJ Operating Temperature Range TJ 15 50 6 28 40 18 80 10 100 115 150 120 200 Volts 42 56 70 105 140 Volts 60 80 100 150 200 Volts 50 3 0 4 1.0 30 Amps 8 12 GATE 40 TO SOURCE VOLTAGE 120 -55 to +125 16 VGS Amps 20 ℃/W (V) PF -55 to +150 IS —— VSD TSTG Storage Temperature Range 16 60 ID=100mA 35 0 200 Typical Thermal Resistance (Note 2) DRAIN CURRENT ID R(mA) ΘJA Typical Junction Capacitance (Note 1) 14 40 ID=50mA 30 10 9 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT ON-RESISTANCE RDS(ON) ( Ω) ( Ω) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% ON-RESISTANCE 4 (V) ℃ - 65 to +175 ℃ 200 100 Ta=25℃ CHARACTERISTICS Pulsed SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC IS (mA) Maximum Average 30 Reverse Current at @T A=25℃ @T A=125℃ NOTES: SOURCE CURRENT Rated DC Blocking Voltage 0.50 0.70 0.85 0.5 IR 10 0.9 0.92 Volts mAmps 10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 3 2- Thermal Resistance From Junction to Ambient 1 0.3 2012-06 2012-0 0.1 0.2 0.4 0.6 SOURCE TO DRAIN VOLTAGE 0.8 VSD (V) 1.0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2SK3019TT1 FM1200-M+ SOT-523 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-523 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .035(0.90) .028(0.70) .067(1.70) .059(1.50) Method 2026 0.031(0.8) Typ. • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .069(1.75) .057(1.45) .004(0.10)MIN. • RoHS product for packing code suffix "G" 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .014(0.35) .008(0.20) FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH RATINGS .010(0.25) Marking Code 12 13 14 15 16 18 10 115 120 .004(0.10) .043(1.10) 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Volts 14 21 28 35 42 56 70 105 140 .035(0.90) Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 20 RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range 30 40 50 60 80 100 150 1.0 30 40 120 -55 to +125 Volts 200 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ NOTES: IR .014(0.35) .006(0.15) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 .035(0.90) .028(0.70) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 WILLAS ELECTRONIC CORP. Rev.D 2012-0 WILLAS ELECTRONIC CORP. SOT-523 Plastic-Encapsulate MOSFETS 2SK3019TT1 Ordering Information: Device PN 2SK3019TT1G(1)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-0 WILLAS ELECTRONIC CORP.