WILLAS FM120-M+ THRU MMBT2907AWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKYTransistor BARRIER RECTIFIERS -20V- 200V General Purpose Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Silicon Low profile surface mounted application in order to •PNP SOD-123H optimize board space. • Low power loss, high efficiency. High current capability, low forward voltage drop. •FEATURE High surgethat capability. •We declare the material of product compliance with RoHS requirements. Guardring for overvoltage protection. •Pb-Free package is available • Ultra high-speed switching. RoHS product for packing code suffix ”G” • Silicon epitaxial planar chip, metal silicon junction. product for packing code suffixof“H” Lead-freefree parts meet environmental standards •Halogen 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Moisture Sensitivity MIL-STD-19500 /228 Level 1 RoHS productINFORMATION for packing code suffix "G" •ORDERING Halogen free product for packing code suffix "H" r Marking Device Mechanical data Shipping • • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. V CBO Value Unit – 60 Vdc – 60 Vdc 0.031(0.8) Typ. 3 COLLECTOR 1 BASE im ina Method 2026 MAXIMUM RATINGS • Polarity : Indicated by cathode band Rating Symbol • Mounting Position : Any Collector–Emitter Voltage V • Weight : Approximated 0.011 gram CEO Collector–Base Voltage SOT–323 3000/Tape&Reel ry MMBT2907AWT1 20 Epoxy : UL94-V0 rated flame retardant Dimensions in inches and (millimeters) 2 EMITTER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Vdc THERMAL CHARACTERISTICS RATINGS Marking Code Characteristic Maximum Recurrent Peak Reverse Voltage SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VRRM Total Device Dissipation FR– 5 Board, (1) Maximum RMS VRMS TA =Voltage 25°C Maximum DCThermal BlockingResistance, Voltage Junction to Ambient VDC Maximum Average Forward Rectified Current Junction and Storage Temperature mAdc Pr el – 5.0 Emitter–Base Voltage V EBO Ratings at 25℃ ambient temperature unless otherwise specified. Collector Current — Continuous IC – 600 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Peak Forward Surge Current 8.3 ms single half sine-wave DEVICE MARKING superimposed on rated load (JEDEC method) IO IFSM Typical Thermal Resistance (Note=20 2) MMBT2907AWT1 RΘJA Typical Junction Capacitance (Note 1) CJ 12 Symbol 20 PD 14 13 30 15 Unit 50 mW 35 16 60 21 14 Max 40 150 28 20 RθJA 42 56 70 30 40 833 50 °C/W 60 80 100 TJ , Tstg –55 to +150 Storage Temperature Range Characteristic 40 120 OFF CHARACTERISTICS CHARACTERISTICS Collector–Emitter Breakdown Voltage(2) Maximum Forward Voltage at 1.0A DC TJ TSTG VF Collector–Emitter Breakdown @TVoltage A=125℃ Rated DC Blocking Voltage NOTES: (I C = – 10 mAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –10µAdc, I C = 0) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Min 115 150 120 200 Volts 105 140 Volts 150 200 Volts Amp Amp ℃/W PF -55 to +150 ℃ +175 Max - 65 to Unit ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 10 mAdc, I B = 0)at @T A=25℃ (I C = –Reverse Maximum Average Current Symbol 10 100 1.0 30 °C noted.) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise -55 to +125 Operating Temperature Range 18 80 V (BR)CEO 0.50–60 — 0.70 Vdc 0.5 IR V (BR)CBO –60 — 10 Vdc V (BR)EBO –5.0 — Vdc I BL — – 50 nAdc I CEX — – 50 nAdc 0.85 0.9 0.92 Volts mAmp 2- Thermal Resistance From Junction to Ambient Base Cutoff Current ( V CE = –30Vdc, V EB(OFF) = –0.5Vdc ) Collector Cutoff Current ( V CE = –30Vdc, V EB(OFF) = –0.5Vdc ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT2907AWT1 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistor Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) • Low profile surface mounted application in order to optimize board space.Characteristic ON power CHARACTERISTICS loss, high efficiency. • Low current capability, • High DC Current Gain(1) low forward voltage drop. capability. • High (Isurge C =–0.1 mAdc, V CE =–10 Vdc) for overvoltage • Guardring (I C = –1.0 mAdc, V CE = protection. –10 Vdc) switching. • Ultra (Ihigh-speed C = –10 mAdc, V CE = –10 Vdc) planar chip, metal silicon junction. • Silicon (I Cepitaxial = –150mAdc, V CE = –10Vdc) parts meet environmental standards of • Lead-free (I C = –500mAdc, V CE =–10 Vdc) MIL-STD-19500 /228 Saturation Voltage(1) product for packing code suffix "G" • RoHSCollector–Emitter (I C =free –150 mAdc,forI Bpacking = –15 mAdc) Halogen product code suffix "H" (I C = –500 mAdc, I B = –50 mAdc) Mechanical data Base–Emitter Saturation Voltage(1) • Epoxy : UL94-V0 rated flame retardant (I C = –150 mAdc, I B = –15mAdc) plastic, SOD-123H • Case(I: Molded C = –500mAdc, I B = –50mAdc ) , • Terminals :Plated terminals, solderable per MIL-STD-750 Min Max 0.146(3.7) 0.130(3.3) Unit 0.012(0.3) Typ. hFE –– 75 100 100 100 50 –– –– –– –– –– –– –– –0.4 –1.6 0.071(1.8) 0.056(1.4) VCE(sat) Vdc 0.040(1.0) 0.024(0.6) Vdc BE(sat) –– –– –1.3 –2.6 ry V 0.031(0.8) Typ. SMALL–SIGNAL CHARACTERISTICS Method 2026 Current–Gain — Bandwidth Product(4) Polarity : Indicated by cathode band (I C = –50mAdc, V CE= 20Vdc, f = 100MHz) Mounting Position : Any Output Capacitance Weight (V :CBApproximated = –10 Vdc, I E =0.011 0, f = gram 1.0 MHz) Input Capacitance im ina • • • SOD-123H Symbol 0.031(0.8) Typ. Dimensions 200 in inches and––(millimeters) MHz f T C –– 8.0 pF –– 30 pF obo C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ibo (V EB = –2.0Vdc, I C = 0, f = 1.0 MHz) Ratings at 25℃ ambient temperature unless otherwise specified. t on — 45 d Delay Time I = –150 mAdc, I = –15 mAdc) t — 10 FM1100-MH ns C B1 FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH RATINGS Rise Time t — r Marking Code 12 13 14 15 16 18 40 10 115 120 Storage (V CC = –6.0 — 30 40 t s 50 60 80 80 100 150 200 Maximum Recurrent PeakTime Reverse Voltage Volts VRRMVdc, 20 Fall Time I C = –150 mAdc,I B1 = I B2 = 15 mAdc) t — 30 ns Volts 14 21 28 f 35 42 56 70 105 140 Maximum RMS Voltage VRMS Turn–Off Time t off — 100 Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC 1. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. Amps Maximum Average Forward Rectified Current IO 1.0 Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps Pr el SWITCHING CHARACTERISTICS Single phase half wave, 60Hz, resistive of inductive load. For capacitive Turn–On load, derate Timecurrent by 20% (V CC = –30 Vdc, superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 40 120 -55 to +125 ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT2907AWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistor Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. SOT-323 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. .087(2.20) of • Lead-free parts meet environmental standards Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) • RoHS product for packing code suffix "G" 0.012(0.3) Typ. .004(0.10)MIN. .070(1.80) .054(1.35) .045(1.15) MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) 0.031(0.8) Typ. im ina Method 2026 0.031(0.8) Typ. • Polarity : Indicated by cathode band • Mounting Position : Any .056(1.40) • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) .010(0.25) .003(0.08) .047(1.20) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS Pr el Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts VDC 20 30 40 50 60 80 100 150 200 Volts .004(0.10)MAX. Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO .016(0.40) .008(0.20) IFSM RΘJA Typical Thermal Resistance (Note 2) .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 1.0 30 40 120 CJ Dimensions in inches and (millimeters) Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT2907AWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY Transistor BARRIER RECTIFIERS -20V- 200V General Purpose SOD-123+ PACKAGE Features • Batch process design, excellent power dissipation offers Pb Free Product Package outline better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. efficiency. • Low power loss, high Device PN Packing 0.146(3.7) 0.130(3.3) (1) voltage drop. • High current capability, low forward MMBT2907AWT1 G ‐WS Tape&Reel: 3 Kpcs/Reel • High surge capability. Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) ina ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** Pr el im WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. for any errors or inaccuracies. Data sheet specifications and its information load, derate current by 20% For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Amps Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmps such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.