WILLAS FM120-M B772 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to TRANSISTOR（PNP） • Low power loss, high efficiency. • High current capability, low forward voltage drop. FEATURES • High surge capability. Low speed• switching Guardring for overvoltage protection. • Ultra high-speed switching. Pb-Free package is available planar chip, metal silicon junction. • Silicon epitaxial parts meet environmental • Lead-free RoHS product for packing code suffix ”G”standards of SOT-89 Halogen free product packing code “H” productfor for packing code suffix suffix "G" • RoHS 3. EMITTER optimize board space. 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1 2 3 1. BASE 0.071(1.8) 0.056(1.4) 2. COLLETOR MIL-STD-19500 /228 Halogen free product Moisture Sensitivity Level 1 for packing code suffix "H" Mechanical data unless otherwise noted) MAXIMUM• RATINGS (Ta=25℃ Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H Symbol Parameter Value Unit, • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 Collector-Emitter • Polarity : IndicatedVoltage by cathode band Emitter-Base Voltage Position : Any • Mounting • Weight : Approximated 0.011 gram Collector Current -Continuous VCEO VEBO IC Collector Power Dissipation PC 0.031(0.8) Typ. 0.031(0.8) Typ. ina ry Collector-Base Voltage VCBO 0.040(1.0) 0.024(0.6) -40 V -30 V -5 V -3 A 0.5 W Dimensions in inches and (millimeters) Tj Tstg im MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Resistance, junctionunless to Ambient 250 RӨJARatings atThermal ℃ /W 25℃ ambient temperature otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 150 Junction Temperature For capacitive load, derate current by 20% Storage Temperature RATINGS Marking Code ℃ -55~150 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- 12 13 14 14 21 28 20 30 40 Pr el ELECTRICAL CHARACTERISTICS otherwise 20 30 specified) 40 Maximum Recurrent Peak Reverse Voltage(Ta=25℃ unless VRRM VRMS Maximum RMS Voltage Parameter Symbol Maximum DC Blocking Voltage VDC Collector-base breakdown voltageCurrent V(BR)CBO IO Maximum Average Forward Rectified V(BR)CEO Collector-emitter breakdown voltage Peak Forward Surge Current 8.3 ms single half sine-wave Emitter-base breakdown voltagemethod) superimposed on rated load (JEDEC V(BR)EBO Typicalcut-off Thermal current Resistance (Note 2) Collector ICBO Collector cut-off current ICEO Emitter cut-off currentRange Storage Temperature IEBO DC current gain hFE Typical Junction Capacitance (Note 1) Operating Temperature Range CHARACTERISTICS Collector-emitter saturation voltage Maximum Forward Voltage at 1.0A DC IFSM Rated DC Blocking Voltage 18 80 10 100 115 150 120 200 35 42 56 70 105 140 50 60 80 100 150 200 Min Typ -40 IC= = -10mA , IB 0 -30 IE== -100μA,IC 0 -5 = VEB=-6V, IC TSTG 1.0 30 40 120 0 60 Unit V V V -1 μA -10-55 to +150 μA - 65 to +175 -1 VCE= -2V, IC= -1A VCE(sat) Max μA 400 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF IR @T A=125℃ NOTES: IC=-100μA = ,IE 0 16 60 RΘJA V = CB= -40V, IE 0 CJ = VCE=-30V,-55 IB to0+125 TJ Maximum Average Reverse Current at @T A=25℃ VBE(sat) Base-emitter saturation voltage Transition frequency Test conditions 15 50 IC=-2A, IB= -0.2A 0.50 0.70 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. -1.5 V 0.9 0.92 10 VCE= -5V, IC=-0.1A fT V 0.85 0.5 IC=-2A, IB= -0.2A -0.5 80 f =10MHz MHz 2- Thermal Resistance From Junction to Ambient CLASSIFICATION OF hFE Rank R O Y GR Range 60-120 100-200 160-320 200-400 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M B772 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Prod Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-89 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" .181(4.60) Mechanical data .173(4.39) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals,.061REF solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) .063(1.60) 0.031(0.8) Typ. ina ry 0.031(0.8) Typ. Method 2026 .055(1.40) (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .167(4.25) 12 Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage .023(0.58) 20 VRRM .016(0.40) 14 VRMS Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM .047(1.2) Peak Forward Surge Current 8.3 ms single half sine-wave .031(0.8) superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) .102(2.60) .091(2.30) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 Pr el Marking Code .154(3.91) RATINGS im Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .060TYP Storage Temperature Range (1.50)TYP TSTG 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 1.0 30 40 120 -55 to +125 .197(0.52) .013(0.32) - 65 to +175 -55 to +150 .017(0.44) FM180-MH FM1100-MH FM1150-MH FM1200.014(0.35) CHARACTERISTICS.118TYP SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 V F 0.50 0.70 0.85 (3.0)TYP Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ 0.5 IR 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 Rev.C WILLAS ELECTRONIC CO WILLAS ELECTRONIC CORP. WILLAS FM120-M+ B772 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features Pb Free Product Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H optimize board space. Ordering Information: high efficiency. • Low power loss, 0.146(3.7) 0.130(3.3) low forward voltage drop. • High current capability, Device PN Packing • High surge capability. (3) (1) (2) B772 x –SOT89 protection. G ‐WS Tape& Reel: 1 Kpcs/Reel for overvoltage • Guardring Ultra high-speed switching. • Note: (1) CASE:SOT‐89 • Silicon epitaxial planar chip, metal silicon junction. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” parts meet environmental standards of • Lead-free 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS (3)product CLASSIFICATION OF h FE RANK for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. 0.031(0.8) Typ. ina ry Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS im changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS 12 13 14 15 16 18 10 115 120 for any errors or inaccuracies. Data sheet specifications and its information 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Vol VRRM contained are intended to provide a product description only. "Typical" parameters Vol 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Vol Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC which may be included on WILLAS data sheets and/ or specifications can Am Maximum Average Forward Rectified Current IO 1.0 and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am WILLAS does not assume any liability arising out of the application or superimposed on rated load (JEDEC method) ℃/W use of any product or circuit. 40 Typical Thermal Resistance (Note 2) RΘJA PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175 Storage Temperature Range TSTG ℃ Marking Code Pr el Ratings at 25℃ WILLAS reserves the right to make changes without notice to any product ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Vol 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 applications where a failure or malfunction of component or circuitry may directly 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAm or indirectly cause injury or threaten a life without expressed written approval 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: 1- Measuredsuch applications do so at their own risk and shall agree to fully indemnify WILLAS at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Inc and its subsidiaries harmless against all claims, damages and expenditures . 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.