WILLAS FM120-M+ THRU MMBT4401WT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to • We declare thatboard the material optimize space. of product compliance with RoHS requirements. power loss, high efficiency. • Lowpackage is available • Pb-Free 0.146(3.7) 0.130(3.3) current low forward voltage drop. • High RoHS product for capability, packing code suffix ”G” High surge capability. • Halogen free product for packing code suffix “H” • Guardring for overvoltage protection. Moisture Sensitivity Level 1 • Ultra high-speed switching. ORDERING epitaxial planar chip, metal silicon junction. • SiliconINFORMATION Lead-free parts meet environmental standards of • Device Marking Shipping 3 MIL-STD-19500 /228 code 3000/Tape suffix "G" & Reel • RoHS product for packing MMBT4401WT1 2X Halogen free product for packing code suffix "H" Mechanical MAXIMUM RATINGS 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 1 2 data SOT-323 : UL94-V0 rated flame retardant • Epoxy Rating Symbol Value Unit • Case : Molded plastic, SOD-123H Collector–Emitter Voltage V CEO 40 Vdc , • Terminals :Plated terminals, solderable per MIL-STD-750 Collector–Base Voltage V CBO Method 2026 Emitter–Base V EBOband • Polarity :Voltage Indicated by cathode 60 Vdc 6.0 Vdc Collector CurrentPosition — Continuous : Any • Mounting 600 mAdc IC 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 3 Dimensions in inches and (millimeters) COLLECTOR 1 • Weight : Approximated 0.011 gram BASE THERMAL CHARACTERISTICS MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 2 Characteristic Max Unit Ratings at 25℃ ambient temperature unless otherwise Symbol specified. EMITTER 225 mW Total Device FR– 5 Board, Single phase halfDissipation wave, 60Hz, resistive of (1) inductive load. PD TA = 25°C load, derate current by 20% For capacitive Derate above 25°C 1.8 mW/°C SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS Thermal Resistance, Junction to Ambient RθJA 556 °C/W Marking Code 12 13 14 15 16 18 10 115 120 Total Device Dissipation PD 300 mW 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM Alumina Substrate, (2) TA = 25°C 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Derate above 25°C 2.4 mW/°C Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC RθJA Thermal Resistance, Junction to Ambient 417 °C/W Maximum Average Current IOTJ , Tstg 1.0 Junction and Forward Storage Rectified Temperature –55 to +150 °C Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) DEVICE MARKING Typical Thermal Resistance (Note 2) MMBT4401LT1 = 2X RΘJA CJ -55 to +125 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Operating Temperature Range TJ Typical Junction Capacitance (Note 1) Storage Temperature Range Characteristic OFF CHARACTERISTICS CHARACTERISTICS Min SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M (I C = 1.0 mAdc, I B = 0) IR @T A=125℃ RatedCollector–Base DC Blocking Voltage Breakdown Voltage V (BR)CBO (I C = 0.1 mAdc, I E = 0) NOTES: Emitter–Base V (BR)EBO 1- Measured at 1 MHZBreakdown and applied Voltage reverse voltage of 4.0 VDC. (I E = 0.1 mAdc, I C = 0) 2- Thermal Resistance From Junction to Ambient Base Cutoff Current I BEV (V CE = 35 Vdc, V EB = 0.4 Vdc) Collector Cutoff Current I CEX (V CE = 35 Vdc, V EB = 0.4 Vdc) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. 40 — 60 — 6.0 — — 0.1 — 0.1 2012-0 2012-06 -55 to +150 - 65 to +175 Max Unit 0.50 Collector–Emitter Breakdown Voltage (3) Maximum Average Reverse Current at @T A=25℃ Symbol VF V (BR)CEO Maximum Forward Voltage at 1.0A DC TSTG 40 120 0.70 0.5 10 Vdc 0.85 0.9 0.92 Vdc Vdc µAdc µAdc WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M MMBT4401WT1THRU FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Package Features Characteristic Symbol • Batch process design, excellent power dissipation offers ON CHARACTERISTICS ( 3 ) better reverse leakage current and thermal resistance. hFE LowCurrent profileGain surface mounted application in order to • DC board space. (Ioptimize C = 0.1 mAdc, V CE = 1.0 Vdc) power loss, high efficiency. • (ILow C = 1.0 mAdc, V CE = 1.0 Vdc) current capability, low forward voltage drop. • (IHigh C = 10 mAdc, V CE = 1.0 Vdc) • High surge capability. (I C = 150 mAdc, V CE = 1.0 Vdc) • Guardring for overvoltage protection. (I C = 500 mAdc, V CE = 2.0 Vdc) high-speed switching. • Ultra Saturation Voltage VCE(sat) Silicon epitaxial planar chip, metal silicon junction. • Collector–Emitter (I C = 150 mAdc, I B = 15 mAdc) • Lead-free parts meet environmental standards of (IMIL-STD-19500 = 50 mAdc) C = 500 mAdc, I B/228 RoHS productSaturation for packing code suffix "G" • Base–Emitter Voltage V BE(sat) free product for packing code suffix "H" (IHalogen C = 150 mAdc, I B = 15 mAdc) 20 40 80 100 40 –– –– 0.4 0.75 0.75 –– 0.95 1.2 0.040(1.0) 0.024(0.6) pF Dimensions in inches and (millimeters) 6.5 C eb pF –– Single phase inductive (V CE=half 10 wave, Vdc, I 60Hz, mAdc, f of = 1.0 kHz) load. C = 1.0resistive For capacitive load, derate current Small–Signal Current Gain by 20% 0.031(0.8) Typ. –– –– 30 kΩ 15 X 10 0.1 –4 8.0 — (V CE= 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 40 500 C FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH RATINGS Output Admittance h µmhos oe Marking Code 12 13 14 15 16 18 10 115 120 CE= 10 Vdc, C = 1.0 mAdc, 20 30 40 1.0 50 60 30 80 100 150 200 Maximum(V Recurrent PeakI Reverse Voltagef = 1.0 kHz) VRRM h fe VRMS 14 21 28 35 42 56 70 105 140 VDC Delay Time (V CC = 30 Vdc, V EB = 2.0 Vdc Maximum Average Forward Rectified Current IO Rise Time I C = 150 mAdc, I B1 = 15 mAdc) Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Storage Time (V CC = 30 Vdc, I C = 150 mAdc 20 30 40 50 60 80 100 150 200 SWITCHING CHARACTERISTICS Maximum DC Blocking Voltage superimposed on rated load (JEDEC method) Time Resistance (Note I B1 = 2) I B2 = 15 mAdc) TypicalFall Thermal RΘJA CJ 3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. Operating Temperature Range TJ Typical Junction Capacitance (Note 1) Storage Temperature Range tf — 30 225 — 30 40 120 -55 to +125 ns ns -55 to +150 - 65 to +175 1.0 kΩ @T A=125℃ VF IR 0.50 + 16 V 0.70 1.0 to 100µs, DUTY CYCLE = 2% 1.0 kΩ +30 V 0.5 C * < 10 pF –14 V < 20 ns 0.85 200Ω 0.9 0.92 10 0 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.S – 2.0V <2.0 ns 2- Thermal Resistance From Junction to Ambient C S*< 10 pF 1N916 – 4.0 V Scope rise time < 4.0ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn–On Time 2012-0 ts — 15 1.0 20 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M 1.0 to 100µs, Maximum Average Reverse Current at @T A=25℃ 200 Ω DUTY CYCLE = 2% + 16 V 0 NOTES: tr — TSTG CHARACTERISTICS Maximum Forward Voltage at 1.0A DC +30 V Rated DC Blocking Voltage td SWITCHING TIME EQUIVALENT TEST CIRCUITS 0.071(1.8) MHz 250 C cb Maximum RMS Voltage 0.012(0.3) Typ. 0.031(0.8) Typ. Input Impedance h ie MAXIMUM AND (V CE= 10 Vdc, I C = 1.0RATINGS mAdc, f = 1.0 kHz) ELECTRICAL CHARACTERISTICS 1.0 Ratings at 25℃ Feedback ambient temperature unless otherwise specified. h re Voltage Ratio –– –– 0.146(3.7) –– 0.130(3.3) –– 300 –– Vdc • Epoxy : UL94-V0 rated flame retardant CHARACTERISTICS Case : Molded plastic, SOD-123H • SMALL–SIGNAL Current–Gain — Bandwidth Product fT , • Terminals :Plated terminals, solderable per MIL-STD-750 Unit Vdc 0.056(1.4) B (I C = 20 mAdc, V CE= 2026 10Vdc, f = 100 MHz) Method Collector–Base Capacitance • Polarity : Indicated by cathode band (V CB= 5.0 Vdc, I E = 0, f = 1.0 MHz) Mounting Position : Any • Emitter–Base Capacitance • (V Weight : Approximated gram Vdc, I C = 0, f = 0.011 1.0 MHz) EB = 0.5 Max SOD-123H Mechanical (I = 500 mAdc, I =data 50 mAdc) C outline Min 2012-06 Figure 2. Turn–Off Time WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M MMBT4401WT1THRU FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline TRANSIENT CHARACTERISTICS Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H T = 25°C J • Low profile surface mounted application in order to T J = 100°C optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltageCprotection. obo • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of CAPACITANCE (pF) 20 10 7.0 5.0 • Mechanical data 3.0 2.0 MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" C cb 0.1 10 7.0 3.0 0.7 0.5 0.3 Q A0.040(1.0) 0.2 0.024(0.6) 200.031(0.8) 30 Typ. 50 70 20 VRRM 12 20 Maximum RMS Voltage 7.0 VRMS 14 7.0 21 28 Maximum DC Blocking Voltage 5.0 VDC 20 30 5.0 40 Time Operating Temperature Range t f , STORAGE TIME (ns) Storage Temperature Range 200 CHARACTERISTICS t s’ = t s – 1/8 t fTJ I B1 = I B2 TSTG I C/I B = 10 to 20 VF Average Reverse Current at @T A=25℃ IR @T A=125℃ NOTES: 50 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 18 80 35 42 50 60 30 10 100 115 150 120 200 56 70 105 140 80 100 150 200 70 1.0 100 50 200 300 500 Figure 6. Rise and Fall Time 40 120 100 -55 to +125 - 65 to +175 70 50 I C /I B = 20 -55 to +150 V CC = 30 V I B1 = I B2 0.50 30 0.70 0.5 I C /I B = 10 20 0.9 0.85 0.92 10 10 7.0 2- Thermal Resistance From Junction to Ambient 30 5.0 10 20 30 50 70 100 200 300 I C , COLLECTOR CURRENT (mA) Figure 7. Storage Time 2012-0 20 16 60 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Maximum Forward Voltage at 1.0A DC 70 15 50 I C , COLLECTOR CURRENT (mA) 30 CJ Typical Junction Capacitance (Note 1) Rated DC Blocking Voltage 10 RΘJA 300 14 40 IFSM Typical Thermal Resistance (Note 2) 100 Maximum 13 10 30 300 IO 500 I C ,Current COLLECTOR CURRENT (mA) Peak Forward Surge 8.3 ms single half sine-wave tf Maximum Recurrent Peak Reverse Voltage 10 200 500 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code 20 30 50 70 100 Average Forward Rectified Current 0.031(0.8) Typ. V CC= 30V I C/I B =10 tr 30 t f , FALL TIME (ns) t , TIME (ns) t d@V EB=0V RATINGS t , RISE TIME (ns) Ratings at 25℃ ambient temperature unless specified. t r @V otherwise =30V CC Single phase half wave, 60Hz, resistive tof@V inductive load. =10V 30 r CC For capacitive load, derate current by 20% t d@V EB=2.0V 20 300 100 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 50 Figure 5. Turn–On superimposed on rated load (JEDEC method) 200 Dimensions in inches and (millimeters) I C /I B = 10 10 Maximum 100 Figure 4. Charge Data • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 50 70 I C , COLLECTOR CURRENT (mA) Figure 3. Capacitance 0.071(1.8) 0.056(1.4) 1.0 • Epoxy : UL94-V0 rated flame retardant 0.1 Case SOD-123H • 0.2 0.3 : Molded 0.5 1.0plastic, 2.0 3.0 5.0 10 20 30 50 , 10 • Terminals :Plated terminals, solderable per MIL-STD-750 70 0.012(0.3) Typ. QT 2.0 REVERSE VOLTAGE (VOLTS) Method 2026 100 0.146(3.7) 0.130(3.3) V CC = 30 V I C / I B = 10 5.0 Q, CHARGE (pC) 30 2012-06 500 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) Figure 8. Fall Time WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M MMBT4401WT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ PACKAGE SMALL–SIGNALSOD-123+ CHARACTERISTICS NOISE FIGURE Package outline V CE = 10 Vdc, T A = 25°C • Batch process design, excellent power dissipation offers Bandwidth = 1.0 Hz better reverse leakage current and thermal resistance. SOD-123H 10• Low profile surface mounted application in order to 10 optimize board I C = 1.0space. mA, R S = 150 Ω f = 1.0 kHz 0.146(3.7) Low power Iloss, • = 500high µA, Refficiency. = 200 Ω R S = OPTIMUM C S 8.0 0.130(3.3) 8.0 100 µA, R S =low 2.0 kΩ I C =capability, forwardRS voltage drop. • High current = SOURCE I C = 50 µA = 50 µA, R S = 4.0 kΩ • High surgeI capability. RS = RESISTANCE I C = 100 µA C 6.0• Guardring for overvoltage protection. I C = 500 µA 6.0 I C = 1.0 mA • Ultra high-speed switching. 4.0• Silicon epitaxial planar chip, metal silicon junction. 4.0 • Lead-free parts meet environmental standards of MIL-STD-19500 /228 2.0 RoHS product for packing code suffix "G" 2.0 • Halogen free product for packing code suffix "H" Mechanical data 0 0.010.02 0.05 0.1 0.2 0.012(0.3) Typ. NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) Features 0.5 1.0 2.0 5.0 10 20 50 0 100 500 • Epoxy : UL94-V0 rated flame retardant f , FREQUENCY (kHz) • Case : Molded plastic, SOD-123H Figure 9. Frequency Effects , • Terminals :Plated terminals, solderable per MIL-STD-750 h PARAMETERS Method 2026 100 200 500 1.0k 2.0k 5.0k 0.071(1.8) 0.056(1.4) 10k 0.040(1.0) 50k 100k 0.024(0.6) 20k R , SOURCE RESISTANCE (kΩ) S 0.031(0.8) Typ. Figure 10. Source Resistance Effects 0.031(0.8) Typ. (V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C) Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Position : Any • Mounting This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of •ransistors. Weight : Approximated 0.011 gram a high–gain and a low–gain unit were selected from the MMBT4401WT1 To obtain these curves, lines, and the same units were used to develop the correspondingly numbered curves on each graph. h fe, CURRENT GAIN Ratings at 25℃ ambient temperature unless otherwise specified. 200 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 100 RATINGS 70 Maximum Recurrent Peak Reverse Voltage 50 RMS Voltage Maximum MMBT4401WT1 UNIT 1 12 VRRM MMBT4401WT1 UNIT 2 20 VRMS 14 VDC 20 Maximum DC Blocking Voltage 30 IO FSM5.0 I7.0 Maximum Average Forward Rectified Current 20 Peak Forward Surge Current 8.3 ms single half sine-wave 0.1 0.2 0.3 0.5 0.7 1.0 2.0 superimposed on rated load (JEDEC method) 20 10 3.0 5.0 13 30 30 TSTG 5.0 CHARACTERISTICS 3.0 Maximum Forward Voltage at 1.0A DC 2.0 IR @T A=125℃ Rated DC Blocking Voltage 1.0 NOTES:0.7 0.5 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal 0.3 Resistance From Junction to Ambient 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 I C , COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio 2012-0 2012-06 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 0.2 0.3 0.5 0.7 1.0 30 1.0 2.0 3.0 7.0 5.0 10 I C , COLLECTOR CURRENT (mA) 40 Figure 12. Input Impedance 120 -55 to +150 - 65 to +175 50 MMBT4401WT1 UNIT1 MMBT4401WT1 UNIT1 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M MMBT4401WT1 UNIT2 MMBT4401WT1 UNIT 2 0.9 0.92 VF 0.70 0.85 20 0.50 Maximum Average Reverse Current at @T A=25℃ h oe , OUTPUT ADMITTANCE ( µmhos) h re, VOLTAGE FEEDBACK RATIO (X 10 –4 ) Storage 7.0Temperature Range 16 60 -55 to 100+125 TJ 10 Temperature Range Operating 0.1 CJ 15 50 1.0 0.5 10 I , COLLECTOR CURRENT (mA) RΘJA Figure 11.1)Current Gain Typical Junction Capacitance (Note 14 40 212.0 C Typical Thermal Resistance (Note 2) MMBT4401WT1 UNIT 1 MMBT4401WT1 UNIT 2 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code h ie, INPUT IMPEDANCE (kΩ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 50 300 10 0.5 10 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 I C , COLLECTOR CURRENT (mA) Figure 14. Output Admittance WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M MMBT4401WT1THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors Pb Free Produ SOD-123+ PACKAGE Package outline Features dissipation offers • Batch process design, excellent powerSTATIC CHARACTERISTICS better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to 3.0 optimize board space. , NORMALIZED CURRENT GAIN • Low power loss, Vhigh= efficiency. 1.0 V CE low forward voltage drop. • High current capability, 2.0 V CE=10 V • High surge capability. T J = 125°C • Guardring for overvoltage protection. • Ultra high-speed switching. 1.0 • Silicon epitaxial planar chip, metal silicon junction. 25°C • 0.7Lead-free parts meet environmental standards of MIL-STD-19500 /228 product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.5RoHS • 0.071(1.8) 0.056(1.4) –55°C Mechanical data h FE • Epoxy : UL94-V0 rated flame retardant 0.2 : Molded plastic, • Case 0.1 0.2 0.3 0.5SOD-123H 0.7 1.0 2.0 3.0 5.0 7.0 , • Terminals :Plated terminals, solderable per MIL-STD-750 10 200.031(0.8) 30 Typ. Figure 15. DC Current Gain • Polarity : Indicated by cathode band 1.0 • Mounting Position : Any • Weight : Approximated 0.011 gram V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) 0.040(1.0) 0.024(0.6) 50 70 T J = 25°C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. 0.6 10 mA load. =1.0 mA Single phase halfI Cwave, 60Hz, resistive of inductive For capacitive load, derate current by 20% 0.4 RATINGS 100mA Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum0 DC Blocking Voltage VDC 20 30 40 0.2 0.01 0.02 0.03 500mA SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M 0.05 0.07 0.1 0.2 0.3 0.5 0.7 14 40 1.0 15 50 2.0 16 60 18 80 35 42 50 60 3.0 5.0 IO I B , BASE CURRENT (mA) Peak Forward Surge Current 8.3 ms single half sine-wave Figure 16. Collector Saturation Region IFSM 7.0 1.0 30 Operating Temperature Range 0.8 V BE(sat) @ I C /I B =10 V, VOLTAGE ( VOLTS ) Storage Temperature Range 0.6 VF 0.4 Maximum Average Reverse Current at @T A=25℃ NOTES: IR @T A=125℃ V CE(sat) @ I C /I B =10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0 2- Thermal0.1 Resistance to Ambient 0.2 0.5From 1.0Junction 2.0 5.0 10 20 50 100 200 I C , COLLECTOR CURRENT (mA) Figure 17. “On” Voltages 2012-06 2012-0 115 150 120 200 56 70 105 140 80 100 150 200 20 30 50 -55 to +150 θ for V CE(sat) - 65 to +175 VC – 0.5 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Maximum Forward Voltage at 1.0A DC 0.2 -55 to0+125 TSTG V BE @ V CE =1.0 V CHARACTERISTICS Rated DC Blocking Voltage TJ 10 10 100 40 120 +0.5 CJ COEFFICIENT (mV/ °C) T J = 25°C Typical Junction Capacitance (Note 1) RΘJA Typical10Thermal Resistance (Note 2) 300 0.031(0.8) 500 Typ. Dimensions in inches and (millimeters) superimposed on rated load (JEDEC method) 20 0.8 Maximum Average Forward Rectified Current 100 I C , COLLECTOR CURRENT (mA) Marking Code 0.012(0.3) Typ. 0.3 Method 2026 0.146(3.7) 0.130(3.3) –1.0 0.50 0.70 0.9 0.85 0.5 –1.5 0.92 10 –2.0 θ VB for V BE – 2.5 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 I C , COLLECTOR CURRENT (mA) Figure 18. Temperature Coefficients WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M MMBT4401WT1THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors Pb Free Produ SOD-123+ PACKAGE Package outline Features offers • Batch process design, excellent power dissipation SOT−323 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to .004(0.10)MIN. optimize board space. .054(1.35) .045(1.15) • Low power loss, high efficiency. voltage drop. • High current capability, low forward.087(2.20) • High surge capability. .070(1.80) • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , .056(1.40) • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) .010(0.25) .003(0.08) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 .047(1.20) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .004(0.10)MAX. RATINGS .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- .016(0.40) .008(0.20)VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Marking Code Maximum Recurrent Peak Reverse Voltage IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave 1.0 30 FSM Dimensions in Iinches and (millimeters) superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2012-0 2- Thermal Resistance From Junction to Ambient WILLAS ELECTRONIC CORP. 0.92 WILLAS FM120-M+ THRU MMBT4401WT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H surface mounted application in order to • Low profile Ordering Information: optimize board space. 0.146(3.7) Packing loss, high efficiency. • Low power Device PN 0.130(3.3) (1) current capability, low forward voltage drop. • High MMBT4401WT1 G ‐WS Tape&Reel: 3 Kpcs/Reel • High surge capability. Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any ***Disclaimer*** • Weight : Approximated 0.011 gram WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. for any errors or inaccuracies. Data sheet specifications and its information For capacitive load, derate current by 20% SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS contained are intended to provide a product description only. "Typical" parameters 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM and do vary in different applications and actual performance may vary over time. 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave FSM 30 I superimposed on rated load (JEDEC method) 40 TypicalWILLAS products are not designed, intended or authorized for use in medical, Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. Marking Code NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.