WILLAS FM120-M+ SESD9DxxVTHRU ESD Protection Diode FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Generaloptimize Description board space. Features power loss, high is efficiency. The• Low SESD9D Series designed to protect Voltage • High current capability, low forward voltage drop. sensitive• High components from ESD. Excellent clamping surge capability. capability, low leakage, and fast protection. response time provide best for overvoltage • Guardring Ultra high-speed switching. • in class protection on designs that are exposed to ESD. • Silicon epitaxial planar chip, metal silicon junction. Because• Lead-free of its small it is suited for use inof cellular parts size, meet environmental standards MIL-STD-19500 /228 phones, MP3 players, digital cameras and many other • RoHS product for packing code suffix "G" portable applications whereforboard is at"H" a premium. Halogen free product packingspace code suffix z 0.146(3.7) Small Body Outline Dimensions: 0.130(3.3) 0.012(0.3) Typ. 0.039″ x 0.024″(1.0 mm x 0.60 mm) Mechanical data • Epoxy : UL94-V0 rated flame retardant Applications z Low Body Height: 0.017″ (0.43 mm) Max z Stand−off Voltage: 3 V − 12 V z Low Leakage z Response Time is Typically < 1 ns 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) Complies with the following standards : Moldedaudio plastic, SOD-123H • Casephones 0.031(0.8) Typ. Cellular IEC61000-4-2 , • Terminals :Plated terminals, solderable per MIL-STD-750 MP3 players Level 4 15 kV (air discharge) z z 0.031(0.8) Typ. Method 2026 Digital cameras 8 kV(contact discharge) Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band z Portable applications MIL STD 883E - Method 3015-7 Class 3 • Mounting Position : Any z mobile telephone 25 kV HBM (Human Body Model) • Weight : Approximated 0.011 gram z Pb-Free package is available MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RoHS product for packing code suffix ”G” Ratings at 25℃ ambient temperature unless otherwise specified. Halogen free product for packing code suffix “H” z Single phase half wave, 60Hz, resistive of inductive load. Sensitivity Level 1 z For Moisture capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Functional diagram Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) SOD-923 Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range Maximum Average Reverse Current at @T A=25℃ ESD Voltage NOTES: @T A=125℃ 115 150 120 200 42 60 56 70 105 140 V 80 100 150 200 V 40 120 -55 to +125 ℃ -55 to +150 - 65 to +175 0.50 Symbol 0.70 Value 8 IR 0.5 10 0.85 Unit kV 25 Per Machine Model 400 V PD 60 W TJ,TSTG -55 to 150 ℃ TL 260 ℃ Peak Pulse Power (tpJunction = 8/20μs) @ TA=25℃ 2- Thermal Resistance From to Ambient Junction and Storage Temperature Range Lead Solder Temperature – Maximum (10 Second Duration) 2012-06 10 100 Per Human Body Model 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2012-09 35 50 VF IEC 61000-4-2 (ESD) Contact 18 80 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum Forward Voltage at 1.0A DC Parameter Rated DC Blocking Voltage 16 60 TSTG Maximum Ratings CHARACTERISTICS 15 50 1.0 30 RΘJA Typical Thermal Resistance (Note 2) 14 40 0.9 0.92 m kV WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS ESD Protection Diode 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Electrical Parameter Features FM120-M+ SESD9DxxVTHRU FM1200-M+ Pb Free Product Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Symbol Parameter • Low profile surface mounted application in order to board space. IPPoptimize Maximum Reverse Peak Pulse Current • Low power loss, high efficiency. V•CHigh current Clamping Voltage @ IPP voltage drop. capability, low forward • High surge capability. VRWM Working Peak Reverse Voltage • Guardring for overvoltage protection. Maximum Reverse Leakage Current @ I•R Ultra high-speed switching. RWM planar chip, metal silicon junction. • SiliconVepitaxial meet environmental standards of • IT Lead-free Testparts Current SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 for packing code suffix V•BRRoHS product Breakdown Voltage @ IT"G" IF Halogen free product for packing code suffix "H" Forward Current Mechanical data V•FEpoxy Forward @ retardant IF : UL94-V0Voltage rated flame • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Electrical Characteristics (TA=25℃ unless otherwise noted, VF=0.9V Max. @ IF=10mA for all types) Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any Part VBR VF C • Weight : Approximated 0.011 gram Numbers IT VRWM IR IF Typ. Min. Typ. Max. Max. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Note1) Ratings at 25℃ ambient temperature unless otherwise specified. V V V mA Single phase half wave, 60Hz, resistive of inductive load. SESD9D3V3 5.0 current5.7 2.5 For capacitive load, derate by 20% 6.4 SESD9D5V 6.2 RATINGS Marking Code SESD9D12V 13.5 6.8 7.6 14.2 15.0 Maximum Recurrent Peak Reverse Voltage VRRM Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave Typical superimposedCharacteristics on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range µA V mA pF 3.0 1 1.25 10 40 1.0 5.0 FM140-MH 1 FM150-MH1.25 10 FM1100-MH FM1150-MH 25 FM160-MH FM180-MH SYMBOL FM120-MH FM130-MH FM1200-MH 1.0 12 20 1.Capacitance is measured at f=1MHz, VR=0V,T =25℃. 14 Maximum RMS Voltage VRMS A V 20 13 12.0 30 14 1 40 15 50 16 1.25 60 18 80 21 28 35 42 56 30 40 50 60 80 10 15115 150 120 200 70 105 140 V 100 150 200 V 10 100 1.0 30 40 120 -55 to +125 ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Fig 1. Typical Breakdown Voltage versus Temperature 2012-09 2012-06 Fig 2. Typical Leakage Current versus Temperature WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS Protection Diode 1.0A SURFACEESD MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ SESD9DxxVTHRU FM1200-M+ Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band Fig 3. • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) 8/20 μs Pulse Waveform MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) Operating Temperature Range Fig 4. Positive 8kV contact per IEC Storage Temperature Range 61000-4-2-SESD9D5V CHARACTERISTICS TJ TSTG Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 40 120 -55 to +125 ℃ -55 to +150 Fig 5. Negative 8kV contact per IEC - 65 to +175 61000-4-2-SESD9D5V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC 1.0 30 @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD9DxxVTHRU Protection Diode FM1200-M+ 1.0A SURFACEESD MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers reverse leakage current and thermal resistance. SOD-923better Mechanical Data SOD-123H • Low profile surface mounted application in order to optimize board space. .006(0.15) .010(0.25) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. protection. • Guardring for overvoltage .030(0.75) • Ultra high-speed switching. .033(0.85) chip, metal silicon junction. • Silicon epitaxial planar • Lead-free parts meet environmental standards of • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .022(0.55) .026(0.65) MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code .003(0.07) .007(0.17) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .017(0.43) Ratings at 25℃ ambient temperature unless otherwise specified. .013(0.34) Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 VDC 20 30 40 50 60 80 100 150 200 Maximum DC Blocking Voltage .037(0.95) Maximum Average Forward Rectified Current .041(1.05) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM Dimensions in inches and (millimeters) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG Marking CHARACTERISTICS Type number Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC @T A=125℃ Marking code IR SESD9D3V3 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. SESD9D5V 2- Thermal Resistance From Junction to Ambient SESD9D12V NOTES: 0.50 0.70 0.85 0.5 0.9 0.92 10 E G H 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. SESD9DxxV ESD Protection Diode Ordering Information: Device PN Part Number ‐T(1)G(2)‐WS Note: (1) Packing code, Tape & Reel Packing Tape&Reel: 8 Kpcs/Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-09 WILLAS ELECTRONIC CORP.