2N7002LT1

WILLAS
FM120-M+
THRU
2N7002LT1
FM1200-M+
Small
Signal MOSFET 115 mAmps, 60 Volts
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
mounted application in order to
• Low profile surface
N–Channel
SOT–23
•
•
•
3
optimize board space.
• Low power loss, high efficiency.
declare
the material
of product
are Halogen
Free and
High
currentthat
capability,
low forward
voltage
drop.
•We
compliance
with
RoHS
requirements.
• High surge capability.
Protected:1000V
Guardring
for overvoltage protection.
•ESD
Ultra high-speed
switching.
•Pb-Free
package
is available
• Silicon epitaxial planar chip, metal silicon junction.
product
for packing
code suffix
”G” of
Lead-free
parts meet
environmental
standards
•RoHS
MIL-STD-19500
/228
Halogen free product for packing code suffix “H”
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1
2
0.071(1.8)
SOT– 23 0.056(1.4)
Mechanical data
0.040(1.0)
Simplified Schematic
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
MAXIMUM RATINGS
• Case : Molded plastic, SOD-123H
Rating
Symbol
Value,
• Terminals :Plated terminals, solderable per MIL-STD-750
Drain–Source Voltage
Method 2026
Voltage (Rby
= 1.0 MΩ)band
GS cathode
•Drain–Gate
Polarity : Indicated
Current
Mounting
Position : Any
•Drain
– Continuous TC = 25°C (Note 1.)
• Weight
: Approximated
– Continuous
TC = 100°C0.011
(Notegram
1.)
– Pulsed (Note 2.)
VDSS
60
VDGR
60
Vdc
±115
±75
±800
mAdc
ID
ID
IDM
0.031(0.8) Typ.
Unit
0.031(0.8) Typ.
Gate
Vdc
1
Dimensions in inches and (millimeters)
3
Drain
2
Source
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
MaximumTHERMAL
RMS VoltageCHARACTERISTICS
VRMS
14
21
28
35
42
56
70
105
140
Volts
50
60
200
Volts
Total Device Dissipation FR–5 Board
TA = 8.3
25°C
Peak Forward(Note
Surge3.)
Current
ms single half sine-wave
Derate above 25°C
20
30
40
VDC
Symbol
Max
Unit
IO
PD
225
mW
1.8
mW/°C
IFSM
Thermal
Resistance,
Junction
to Ambient
Typical Thermal
Resistance
(Note
2)
RθJA
RΘJA
Maximum DC Blocking Voltage
Characteristic
Maximum Average Forward Rectified Current
superimposed on rated load (JEDEC method)
Typical Junction
Capacitance
(Note 1)
Total Device
Dissipation
Alumina Substrate,(Note
4.) TA = 25°C
Operating Temperature
Range
Derate
above
25°C
Storage Temperature Range
(Top View)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Vdc
Vpk
Thermal Resistance, Junction to Ambient
CHARACTERISTICS
Junction and Storage Temperature
Maximum Forward Voltage at 1.0A DC
CJ PD
TJ
TSTG
556
°C/W
RθJA
417
TJ, Tstg
VF
-55 to
+150
°C
0.50
702
W
0.70
Maximum Average Reverse Current at @T A=25℃
10
℃/W
PF
-55 to +150
℃
2
℃
Source
= Device Code
=Month Code
0.9
0.85
0.92
Volts
mAmps
ORDERING INFORMATION
Device
2N7002LT1
2012-10
Amps
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Rated DC Blocking Voltage
2012-06
702
1
0.5
2- Thermal Resistance From Junction to Ambient
3
- 65 to Gate
+175
°C/W
Amps
Drain
40
120
300
mW
-55 to mW/°C
+125
2.4
IR
1. The Power Dissipation of [email protected]
package
may result in a lower continuous drain
A=125℃
current.
NOTES: 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
1.0
30
MARKING
DIAGRAM
80
100
150
& PIN ASSIGNMENT
W
Gate–Source Voltage
Ratings at–25℃
ambient temperature unless otherwiseVspecified. ±20
Continuous
GS
Single phase
half wave, 60Hz,
– Non–repetitive
(tp ≤resistive
50 µs) of inductive load.
VGSM
±40
For capacitive load, derate current by 20%
Marking
Shipping
702
3000 Tape & Reel
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2N7002LT1
THRU
FM1200-M+
Small
Signal MOSFET 115 mAmps, 60 Volts
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
CHARACTERISTICS
A = 25°C unless
Batch process design,
excellent power(T
dissipation
offersotherwise noted)
• ELECTRICAL
better reverse leakage current
and thermal resistance.
Characteristic
Symbol
• Low profile surface mounted application in order to
SOD-123H Typ
Min
Max
Unit
–
Vdc
1.0
500
µAdc
optimize
board space.
OFF
CHARACTERISTICS
power loss, high efficiency.
• Low
Drain–Source Breakdown Voltage
current
• High
(VGS
= 0, IDcapability,
= 10 µAdc)low forward voltage drop.
• High surge capability.
Zero Gate for
Voltage
Drain Current
TJ = 25°C
overvoltage
protection.
• Guardring
(VGS = 0, VDS = 60 Vdc)
TJ = 125°C
• Ultra high-speed switching.
epitaxial
planar
chip, Forward
metal silicon junction.
• Silicon
Gate–Body
Leakage
Current,
Vdc)meet environmental standards of
(VGS = 20
parts
• Lead-free
0.146(3.7)
V(BR)DSS
600.130(3.3)
–
–
–
–
–
IGSSF
–
–
1
µAdc
Gate–Body Leakage Current, Reverse
product for packing code suffix "G"
• RoHS
IGSSR
–
–
-1
µAdc
Gate Threshold
: UL94-V0Voltage
rated flame retardant
• Epoxy
(V = VGS, ID = 250 µAdc)
: Molded plastic, SOD-123H
• CaseDS
,
On–State Drain
Current
• Terminals
:Plated
terminals, solderable per MIL-STD-750
VGS(th)
1.0
1.6
500
–
IDSS
MIL-STD-19500 /228
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
(VGS = – 20 Vdc)
Halogen
free product for packing code suffix "H"
ON CHARACTERISTICS
Mechanical
data (Note 2.)
gFS
12
20
13
30
14
40
15
C50
iss
(VVoltage
DS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Maximum RMS
VRMS
14
21
28
35
Maximum DC
Blocking
Voltage
Output
Capacitance
VDC
20
30
40
IO
IFSM
SWITCHING CHARACTERISTICS (Note
2.)
RΘJA
Typical Thermal Resistance (Note 2)
Operating Temperature
Range
Turn–Off Delay
Time
Storage Temperature Range
BODY–DRAIN DIODE RATINGS
Diode Forward
On–Voltage
CHARACTERISTICS
(I
=
115
mAdc,
V GSDC
= 0 V)
S
Maximum Forward Voltage at 1.0A
Source Reverse
Current Continuous
Maximum Average
Current at @T A=25℃
(BodyVoltage
Diode)
Rated DC Blocking
NOTES:
@T A=125℃
1.4
–
1.8
–
7.5
13.5
7.5
13.5
80
–
–
16
60 –
18
80
42
56
C50
oss
60 –
80
Crss
1.0
–
30
^ 500 mAdc,
CJ , ID
(V DD = 25 Vdc
-55 to +125
RG = 25 Ω, RT
L J= 50 Ω, Vgen = 10 V)
Turn–On
Delay Time
Typical Junction
Capacitance
(Note 1)
–
–
–
–
mmhos
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VRRM
superimposed on rated load (JEDEC method)
Vdc
Ohms
CHARACTERISTICS
Maximum Recurrent
Peak Reverse Voltage
Input Capacitance
Reverse Transfer Capacitance
Peak Forward Surge
8.3Vms single
half sine-wave
(VDS =Current
25 Vdc,
GS = 0, f = 1.0 MHz)
mA
rDS(on)
TC = 25°C
MAXIMUM RATINGS AND
125°C
TC =ELECTRICAL
(V
=
5.0
Vdc,
I
=
50
mAdc)
T
= 25°C specified.
GS
D
C
Ratings at 25℃ ambient temperature unless otherwise
TC = 125°C
Single phase half wave, 60Hz, resistive of inductive
load.
Forward
For capacitive
load,Transconductance
derate current by 20%
(VDS ≥ 2.0 VDS(on), ID = 200 mAdc)
Maximum Average Forward Rectified Current
–
VDS(on)
Dimensions in inches and (millimeters)
–
–
3.75
–
–
0.375
(VGS = 10 V, ID = 500 mAdc)
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Vdc
0.031(0.8) Typ.
ID(on)
•
•
• Weight
: Approximated
0.011 Resistance
gram
Static Drain–Source
On–State
RATINGS
DYNAMIC CHARACTERISTICS
Marking Code
2
0.031(0.8) Typ.
(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)
Method 2026
Static
Drain–Source
On–State
Voltage
Polarity : Indicated by
cathode
band
(VGS = 10 Vdc, ID = 500 mAdc)
Mounting
Position
:
Any
(VGS = 5.0 Vdc, ID = 50 mAdc)
0.040(1.0)
0.024(0.6)
TSTG
40
–
120
td(on)
td(off)
–
- 65 to +175
10
115
50 150
pF 200
Volts
70
105
140
Volts
10 100
25 150
pF 200
Volts
2.5
5.0
pF
17 100
120
Amps
Amps
℃/W
20
ns
PF
-55
11to +150 40
ns
℃
7
℃
VSD
– FM180-MH FM1100-MH
–
–1.5
FM160-MH
FM1150-MHVdc
FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
VF
IR
Source Current Pulsed
0.50
0.70
IS
0.85
0.5
–
0.9
0.92
–
–115
mAdc
–
–800
mAdc
10
ISM
–
Volts
mAmps
2. atPulse
Test:
≤ voltage
300 µs,ofDuty
Cycle ≤ 2.0%.
1- Measured
1 MHZ
and Pulse
appliedWidth
reverse
4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
2N7002LT1
FM1200-M+
Small
Signal MOSFET 115 mAmps, 60 Volts
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
TYPICAL
CHARACTERISTICS
in orderELECTRICAL
to
• Low profile surface mounted application
SOD-123H
optimize board space.
MIL-STD-19500
/228
1.0
• RoHS product for packing code suffix "G"
0.8 free product for packing code suffix "H"
Halogen
0.6
Mechanical
data
VDS = 10 V
6V
5V
MethodV 2026
DS, DRAIN SOURCE VOLTAGE (VOLTS)
Polarity : Indicated by cathode band
125°C
0.6
0.4
0.040(1.0)
0.024(0.6)
0.2
0.031(0.8) Typ.
10
0
1.0
Marking Code
9.0
10
RATINGS AND ELECTRICAL CHARACTERISTICS
1.2
RATINGS
1.05
VDS = VGS
ID = 1.0 mA
1.1
1.10
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
1.0
1.4
Maximum Recurrent Peak Reverse Voltage
1.2
Maximum RMS Voltage
1.0
Maximum DC Blocking
Voltage
0.8 Forward Rectified Current
Maximum Average
2.0 3.0 4.0
5.0
6.0 7.0 8.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Dimensions in inches and (millimeters)
Ratings at 25℃
2.2 ambient temperature unless otherwise specified.
VGS =60Hz,
10 V resistive of inductive load.
Single phase half
2.0 wave,
mA
ID = 200 current
For capacitive load, derate
by 20%
1.8
1.6
0.031(0.8) Typ.
Figure 2. Transfer Characteristics
VGS(th), THRESHOLD VOLTAGE (NORMALIZED)
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
25°C
-o55°C
0.071(1.8)
0.056(1.4)
•
Figure 1. Ohmic Region
• Mounting Position : Any
• Weight : Approximated 0.011 gram
2.4MAXIMUM
0.012(0.3) Typ.
0.8
7V
0.4 : UL94-V0 rated flame retardant
• Epoxy
4V
• Case0.2: Molded plastic, SOD-123H
3V,
0
• Terminals
:Plated terminals, solderable per MIL-STD-750
0
1.0 2.0 3.0 4.0 5.0
6.0
7.0 8.0 9.0
0.146(3.7)
0.130(3.3)
1.0
ID, DRAIN CURRENT (AMPS)
I D, DRAIN CURRENT (AMPS)
• Low power loss, high efficiency.
current capability, low forward voltage drop.
• High2.0
surge Tcapability.
• High1.8
A = 25°C
for overvoltage protection.
• Guardring
1.6
VGS = 10 V
• Ultra high-speed switching.
1.4
9V
• Silicon epitaxial planar chip, metal silicon junction.
1.2
• Lead-free parts meet environmental standards of
8V
VRRM
12
20
13
30
VRMS
14
21
VDC
20
30
IO
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
0.4
superimposed on rated
-o60 load (JEDEC
-o20method) +o20
+o60
Typical Thermal Resistance (Note 2) T, TEMPERATURE (°C)
RΘJA
0.6
CJ
Typical Junction Capacitance (Note 1)
+o100
14
0.95
40
0.9
28
0.85
40
0.8
0.75
0.7
+o140
Figure 3. Temperature versus Static -55 to +125
TJ
Drain–Source On–Resistance
Operating Temperature Range
Storage Temperature Range
15
50
16
60
18
80
10
100
115
150
120
200
Volts
35
42
56
70
105
140
Volts
50
60
80
100
150
200
Volts
1.0
30
-o60
-o20
+o20
+o60
(°C)
40TEMPERATURE
T,
120
Figure 4. Temperature
versus Gate
-55 to +150
Amps
Amps
+o100
+o140
℃/W
PF
℃
Threshold Voltage
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
2N7002LT1
FM1200-M+
Small
Signal MOSFET 115 mAmps, 60 Volts
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
0.130(3.3)
.106(2.70)
Halogen free product for packing code suffix "H"
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.110(2.80)
Mechanical data
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.008(0.20)
.080(2.04)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.070(1.78)
.003(0.08)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
.004(0.10)MAX.
Peak Forward Surge Current 8.3 ms single half sine-wave
.020(0.50)
R.012(0.30)
ΘJA
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
40
120
-55 to +125
CHARACTERISTICS
VF
0.50
℃/W
PF
℃
- 65 to +175
0.70
0.037
0.95
0.037 IR
0.95
@T A=125℃
Amps
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Amps
-55 to +150
TSTG
Dimensions
in inches and (millimeters)
Rated DC Blocking Voltage
1.0
30
.055(1.40)
.035(0.89)
.086(2.10)
• RoHS product for packing code suffix "G"
0.012(0.3) Typ.
.006(0.15)MIN.
MIL-STD-19500 /228
.063(1.60)
.047(1.20)
• Low power loss, high efficiency.
SOT-23
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
of
• Lead-free parts meet environmental standards
.122(3.10)
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.079
2.0
0.035
0.9
2012-06
2012-10
0.031
0.8
inches
mm
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
60 Volts
Small Signal MOSFET 115 mAmps,
2N7002LT1
Ordering Information: Device PN 2N7002LT1G(1)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-10
WILLAS ELECTRONIC CORP.