WILLAS FM120-M+ THRU SRK7002LT1 FM1200-M+ Small Signal MOSFET Silicon N-Channel 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. zFeatures • Low power loss, high efficiency. 1) Low on-resistance. • High current capability, low forward voltage drop. 2)• High Fast surge switching speed. capability. 3)• Guardring Low-voltage drive. for overvoltage protection. 4)• Ultra Easilyhigh-speed designed drive circuits. switching. 5)• Silicon Easy toepitaxial parallel.planar chip, metal silicon junction. parts meet environmental standards of 6)• Lead-free Pb-Free package is available 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) /228 7) MIL-STD-19500 ESD Protected:2000V • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant z Pb-Free package is available • Case : Molded plastic, SOD-123H , RoHS product for packing ”G” . code suffix • Terminals :Plated terminals, solderable per MIL-STD-750 SOT-23 0.031(0.8) Typ. 0.031(0.8) Typ. 2026 for packing code suffix “H” Halogen Method free product Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram zDevice Marking and Ordering Information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Device Marking Shipping Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. SRK7002LT1 RK 3000 Tape & Reel For capacitive load, derate current by 20% RATINGS Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 70 105 140 Volts °& VDC 20 30 40 50 60 g 56 100 150 200 Volts $EVROXWHPD[LPXPUDWLQJV7D zDC Maximum Blocking Voltage 3 d FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH IO Symbol Peak Forward Surge Current 8.3 ms single half sine-waveVDSS Drain-source voltage IFSM superimposed on rated load (JEDEC VGSS Gate-source voltage method) Typical Thermal Resistance (Note 2) RΘJA ID Continuous Typical Junction Capacitance (Note 1) CJ Drain current IDP∗T1J Pulsed Operating Temperature Range IDR Continuous Storage Temperature Range TSTG Drain reverse current IDRP∗1 Pulsed Maximum Average Forward Rectified Current Parameter CHARACTERISTICS Maximum Forward Voltage at 1.0A DC NOTES: Unit 60 V ±20 V 115 1.0 30 40 120 mA 0.8 -55 to +125 A 115 mA 0.8 A 80 Amps Amps s 2 ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT PD∗2 VF Channel temperature Tch Maximum Average Reverse Current at @T A=25℃ IR @T A=125℃ Tstg Rated DCStorage Blockingtemperature Voltage Total power dissipation Limits 1 225 150 −55~+150 mW 0.50 °C °C 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a 1×0.75×0.062 inch glass epoxy board. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SRK7002LT1 FM1200-M+ Small Signal MOSFET Silicon N-Channel 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers (OHFWULFDOFKDUDFWHULVWLFV7D °& better z reverse leakage current and thermal resistance. • Low profile surface mounted application in order to Parameter optimize board space. Symbol Test Conditions Typ. Max. Unit − − ±10 µA VDS=0V VGS=±20V,0.146(3.7) 0.130(3.3) 60 − − V ID=10µA, VGS=0V − − 1 µA VDS=60V, VGS=0V 1 1.85 2.5 V VDS=VGS , ID=250uA − − 7.5 Min. loss, high efficiency. • Low power IGSS Gate-source leakage current • High current capability, low forward voltage drop. V (BR) DSS Drain-source breakdown voltage • High surge capability. IDSS Zerofor gate voltage drain current overvoltage protection. • Guardring switching. • Ultra high-speed VGS (th) Gate threshold voltage • Silicon epitaxial planar chip, metal silicon junction. parts meeton-state environmental standards • Lead-free Drain-source resistance RDS (on)∗of SOD-123H Ω − − 7.5 80 − − mS VDS=10V, ID=0.2A − 25 50 pF Coss − 10 25 pF VDS=25V VGS=0V f=1MHz capacitance Epoxy :Output UL94-V0 rated flame retardant Reverseplastic, transferSOD-123H capacitance Case : Molded • 3.0 Crss − • , 12 ∗ − Turn-on delay time td (on) • Terminals :Plated terminals, solderable per MIL-STD-750 5.0 20 ns 20 30 ns td (off)∗ Method 2026 Turn-off delay time − pF 0.071(1.8) 0.056(1.4) ID=0.5A, VGS=10V l Yfs l∗ Halogen free product for packing code suffix "H" Ciss Input capacitance Mechanical data MIL-STD-19500 /228 for packing code suffix "G" • RoHS product Forward transfer admittance 0.012(0.3) Typ. ID=0.05A, VGS=5V 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. ID=200mA, VDD 30V VGS=10V, RL=150Ω ,RGS=10Ω Dimensions in inches and (millimeters) • Polarity ∗: Indicated by cathode PW≤300µs, Duty cycle≤1% band • Mounting Position : Any • Weight : Approximated 0.011 gram z(OHFWULFDOFKDUDFWHULVWLF curveV MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SRK7002LT1 FM1200-M+ Small Signal MOSFET Silicon N-Channel 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H z(OHFWULFDOFKDUDFWHULVWLF curveV (continues) surface mounted application in order to • Low profile optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave 1.0 30 zSwitching FKDUDFWHULVWLFs measurement circuit Typical Thermal Resistance (Note 2) RΘJA superimposed on rated load (JEDEC method) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SRK7002LT1 FM1200-M+ Small Signal MOSFET Silicon N-Channel 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) 0.130(3.3) .106(2.70) Halogen free product for packing code suffix "H" 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .110(2.80) Mechanical data 0.071(1.8) 0.056(1.4) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. Dimensions in inches and (millimeters) .008(0.20) .080(2.04) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .070(1.78) .003(0.08) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage .004(0.10)MAX. Peak Forward Surge Current 8.3 ms single half sine-wave .020(0.50) R.012(0.30) ΘJA superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 40 120 -55 to +125 CHARACTERISTICS Amps Amps ℃/W PF -55 to +150 TSTG Dimensions in inches and (millimeters) ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃0.037 Rated DC Blocking Voltage 1.0 30 .055(1.40) .035(0.89) .086(2.10) • RoHS product for packing code suffix "G" 0.012(0.3) Typ. .006(0.15)MIN. MIL-STD-19500 /228 .063(1.60) .047(1.20) • Low power loss, high efficiency. • High current capability, low forward voltage drop. SOT-23 • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. of • Lead-free parts meet environmental standards .122(3.10) @T A=125℃0.95 0.50 0.037 0.95 IR 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.079 2.0 2- Thermal Resistance From Junction to Ambient 0.035 0.9 0.031 0.8 2012-06 2012-10 inches mm WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. Small Signal MOSFET Silicon N-Channel SRK7002LT1 Ordering Information: Device PN SRK7002LT1G(1)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-10 WILLAS ELECTRONIC CORP.