MMBT5551WT1

WILLAS
FM120-M+
THRU
MMBT5551WT1
FM1200-M+
1.0ADUAL
SURFACE
BARRIER RECTIFIERS -20V- 200V
NPNMOUNT
SMALLSCHOTTKY
SIGNAL SURFACE
SOD-123+ PACKAGE
Pb Free Product
MOUNT TRANSISTOR
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Low profile surface mounted application in order to
•FEATURE
ƽoptimize
Moisture
Sensitivity
board
space. Level 1
We power
declareloss,
thathigh
the material
of product compliance with RoHS requirements.
efficiency.
• Low
Pb-Free
package
is available
current
capability,
low forward voltage drop.
• High
RoHS
product
for packing code suffix ”G”
surge
capability.
• High
Halogen
free
product
for packing
code suffix “H”
protection.
• Guardring for overvoltage
Ultra high-speed
switching.
•DEVICE
MARKING
AND ORDERING INFORMATION
epitaxial planar chip, metal silicon junction.
• SiliconDevice
Marking
Shipping
• Lead-free parts meet environmental standards of
G1
MIL-STD-19500
MMBT5551WT1 /228
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
3000/Tape&Reel
• RoHS product for packing code suffix "G"
0.012(0.3) Typ.
SOT–323
MAXIMUM
Halogen freeRATINGS
product for packing code suffix "H"
Mechanical
Rating data
Symbol
Value
Unit
: UL94-V0 rated
flame retardant
• Epoxy
160
Collector–Emitter
Voltage
V CEO
:
Molded
plastic,
SOD-123H
• Case
180
Collector–Base Voltage
V CBO
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Emitter–Base Voltage
V EBO
Method 2026
Collector
Current —byContinuous
Polarity
: Indicated
cathode bandI C
•
Mounting Position : Any
•THERMAL
CHARACTERISTICS
• Weight : Approximated 0.011 gram
Vdc
6.0
Vdc
600
mAdc
Characteristic
3
0.040(1.0)
COLLECTOR
0.024(0.6)
Vdc
Symbol
0.031(0.8) Typ.
0.031(0.8) Typ.
1
BASE
2
EMITTER
Dimensions in inches and (millimeters)
Max
Unit
TotalMAXIMUM
Device Dissipation
FR– 5 Board,
RATINGS
AND (1)
ELECTRICAL
PD CHARACTERISTICS
225
mW
TA = 25°C
Ratings at 25℃ ambient temperature unless otherwise specified.
Derate above 25°C
1.8
mW/°C
Single phase half wave, 60Hz, resistive of inductive load.
Thermal Resistance, Junction to Ambient
RθJA
556
°C/W
For capacitive load, derate current by 20%
Total Device Dissipation
300
mW FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
PD FM130-MH FM140-MH
FM150-MH
SYMBOL FM120-MH
RATINGS
Alumina Substrate, (2) TA = 25°C
Marking Code
12
13
14
15
18
10
115
120
Derate above 25°C
2.4
mW/°C 16
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
Thermal Resistance, Junction to Ambient VRRM
RθJA
417
°C/W
Volts
14
21 –55 to28
35 °C
42
56
70
105
140
Maximum RMS
Voltageand Storage Temperature
VRMS
J , Tstg
Junction
T
+150
Maximum DC Blocking Voltage
VDC
20
30
40
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Maximum Average Forward Rectified Current
Characteristic
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed
rated load (JEDEC method)
OFFonCHARACTERISTICS
Typical Thermal Resistance (Note 2)
Collector–Emitter Breakdown Voltage(3)
IO
IFSM
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
(I C = 1.0 mAdc, I B = 0)
Storage Temperature Range
Collector–Base Breakdown Voltage
(I C = 100 µAdc, I E = 0)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current
( V CB = 120Vdc, I E = 0)
NOTES:
Min
V (BR)CEO
-55 to +125
160
80
1.0
Max 30
—
40
120
100
150
Volts
200
Amps
Unit
Amps
℃/W
Vdc
PF
-55 to +150
℃
- 65 to +175
TSTG
V(BR)CBO
180
℃
Vdc
—
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Symbol
60
@T A=125℃
IR
0.50
V (BR)EBO
0.70
6.0
0.85
—
I CBO
0.5
10
0.9
0.92
Volts
Vdc
—
50
nAdc
—
50
µAdc
—
50
mAmp
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
( V CB = From
120Vdc,
I E =to0,Ambient
T A=100 °C)
2- Thermal Resistance
Junction
Emitter Cutoff Current
( V BE = 4.0Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
2012-06
2012-11
I EBO
nAdc
WILLAS ELECTRONIC CORP.
WILLAS
ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
MMBT5551WT1
FM1200-M+
1.0ADUAL
SURFACE
BARRIER RECTIFIERS -20V- 200V
NPNMOUNT
SMALLSCHOTTKY
SIGNAL SURFACE
SOD-123+ PACKAGE
Pb Free Product
MOUNT TRANSISTOR
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
= 25°C
ELECTRICAL
CHARACTERISTICS
profile surface
mounted application(TinAorder
tounless otherwise noted) (Continued)
• Low
optimize board space.Characteristic
Symbol
loss, high efficiency.
• Low
ONpower
CHARACTERISTICS
capability, low forward voltage drop.
• High current
DC Current Gain
capability.
• High surge
(I C = 1.0 mAdc, V CE = 5.0 Vdc)
• Guardring for overvoltage protection.
• Ultra high-speed switching.
C = 10 mAdc, V CE = 5.0 Vdc)
planar chip, metal silicon junction.
• Silicon(I epitaxial
• Lead-free parts meet environmental standards of
Min
Max
Unit
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
hFE
––
(I C = 50 mAdc,
V CE = 5.0Vdc)
MIL-STD-19500
/228
80
—
80
250
30
—
—
0.15
0.071(1.8)
0.056(1.4)
• RoHS product for packing code suffix "G"
Halogen
free product forSaturation
packing code
suffix "H"
Collector–Emitter
Voltage
VCE(sat)
Mechanical
data
(I = 10 mAdc,
I = 1.0 mAdc)
C
Vdc
B
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
C = 50 mAdc, I B = 5.0 mAdc )
plastic, SOD-123H
• Case (I: Molded
,
• Terminals :Plated terminals, solderable per MIL-STD-750
—
0.20
0.031(0.8) Typ.
Base–Emitter Saturation Voltage
Method 2026
(I C = 10 mAdc, I B = 1.0 mAdc)
Polarity : Indicated by cathode band
V
0.031(0.8) Typ.
Vdc
BE(sat)
—
•
• Mounting
(I C =Position
50 mAdc,: Any
I B = 5.0 mAdc)
• Weight : Approximated 0.011 gram
1.0
Dimensions in inches and (millimeters)
—
1.0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS
ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
MMBT5551WT1
FM1200-M+
1.0ADUAL
SURFACE
BARRIER RECTIFIERS -20V- 200V
NPNMOUNT
SMALLSCHOTTKY
SIGNAL SURFACE
SOD-123+ PACKAGE
Pb Free Product
MOUNT TRANSISTOR
Package outline
Features
h FE, DC CURRENT GAIN (NORMALIZED)
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
500
surface mounted application in order to
• Low profile
optimize
board space.
300
T J = +125°C
loss, high
efficiency.
• Low power
200
low forward voltage drop.
• High current capability,
+25°C
capability.
• High surge
100
protection.
• Guardring for overvoltage
–55°C
50
switching.
• Ultra high-speed
epitaxial planar chip, metal silicon junction.
• Silicon 30
20 parts meet environmental standards of
• Lead-free
V CE = 1.0 V
0.146(3.7)
0.130(3.3)
V CE
= 5.0 V
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
for packing code suffix "G"
• RoHS product
10
Halogen7.0free product for packing code suffix "H"
5.0
Mechanical
data
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
V CE, COLLECTOR EMITTER VOLTAGE (VOLTS)
• Epoxy : UL94-V0 rated flame retardant
I C , COLLECTOR CURRENT (mA)
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
, 15. DC Current Gain
Figure
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
I C = 1.0 mA
10 mA
30 mA
100 mA
0.6
MAXIMUM
RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half0.4wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
0.2
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
VRRM
Maximum Recurrent0 Peak Reverse Voltage
0.005
0.01
0.02
0.05
0.1
12
20
13
30
0.2
0.5
1.0
2.0
18
80
5.0
VDC
20 I B , BASE
30 CURRENT
40
50
(mA)
Maximum Average Forward Rectified Current
IO Figure 16. Collector Saturation Region 1.0
30
IFSM
superimposed on rated load (JEDEC method)
1
10 –1
TSTG
T J = 125°C
I C= I
CES
CHARACTERISTICS
VF
75°C
Maximum Forward Voltage at 1.0A DC
Maximum Average10Reverse
Current
at @T A=25℃
REVERSE
–3
FORWARD
NOTES:
10 –4
25°C
@T A=125℃
20
100
105
50
150
120
200
Volts
140
Volts
200
Volts
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
℃
V BE(sat) @ I C /I B = 10
0.6
IR
0.70
0.9
0.85
0.92
0.5
0.4
Volts
mAmps
10
0.2
V CE(sat) @ I C /I B = 10
10
–0.4 –0.3
–0.2to Ambient
–0.1
0
2- Thermal Resistance From
Junction
2012-06
70
115
150
0.50
1- Measured at 1 MHZ–5and applied reverse voltage of 4.0 VDC.
2012-11
10
80
40
120
0.8
10
100
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
10 –2
Rated DC Blocking Voltage
V, VOLTAGE (VOLTS)
I C, COLLECTOR CURRENT (µA)
Storage Temperature Range
56
60
T J = 25°C
-55 to +125
TJ
0
10
Operating Temperature
Range
42
1.0
CJ
V CE
= 30 V
Typical Junction Capacitance
(Note
1)
RΘJA
10
Typical Thermal Resistance
(Note 2)
35
16
60
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
28
15
50
14
21
14
40
VRMS
Maximum RMS Voltage
100
Method 2026
1.0
• Polarity : Indicated by cathode band
T J = 25°C
• Mounting Position : Any
0.8
• Weight : Approximated 0.011 gram
0.040(1.0)
50
70
0.024(0.6)
30
0.1
0.2
0
0.3
0.4
0.5
0.6
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
V BE , BASE–EMITTER VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 3. Collector Cut–Off Region
Figure 4. “On” Voltages
100
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
MMBT5551WT1
NPN MOUNT
SMALLSCHOTTKY
SIGNAL SURFACE
FM1200-M+
1.0ADUAL
SURFACE
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
MOUNT TRANSISTOR
Package outline
Features
, TEMPERATURE COEFFICIENT (mV/°C)
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
2.5
surface mounted application in order to
• Low profile
optimize2 board space.
T J = –55°C to +135°C
loss, high efficiency.
• Low power
1.5
• High current capability, low forward voltage drop.
1.0
• High surge capability.
θ VC for V CE(sat)
0.5
for overvoltage protection.
• Guardring
0
• Ultra high-speed switching.
epitaxial planar chip, metal silicon junction.
• Silicon–0.5
parts meet environmental standards of
• Lead-free
–1.0
•
0.146(3.7)
0.130(3.3)
10.2 V
V
0.5
1.0
2.0 3.0 5.0
10
100
30 V
0.071(1.8)
RC
3.0
k
0.056(1.4)
0.25 mF
10 ms
RB
INPUT PULSE
V out
5.1 k
20 30
50
1N914
0.040(1.0)
0.024(0.6)
100
θ
• Epoxy : UL94-V0 rated flame retardant
I C ,SOD-123H
COLLECTOR CURRENT (mA)
• Case : Molded plastic,
,
Figure
5. Temperature
Coefficients
• Terminals :Plated terminals,
solderable per
MIL-STD-750
100
V in
t r , t f <10 ns
DUTY CYCLE = 1.0%
Mechanical
data
–2.5
0.2 0.3
V CC
–8.8 V
V in
θ VB for V BE(sat)
MIL-STD-19500 /228
RoHS –1.5
product for packing code suffix "G"
–2.0free product for packing code suffix "H"
Halogen
0.1
V BB
0.012(0.3) Typ.
Values Shown are for I C @ 10 mA
0.031(0.8) Typ.
Figure 6. Switching Time Test Circuit
0.031(0.8) Typ.
Method 2026
• Polarity
: Indicated by cathode band
100
70
Position : Any
• Mounting
50
• Weight : Approximated 0.011 gram
500
C, CAPACITANCE (pF)
t r @ V CC = 30 V
3.0
1.0
0.2
0.3
100
t d @ V EB(off) = 1.0 V
50
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH
C obo FM130-MH FM140-MH
30
V CC = 120 V
VRRM
12
20
13
30
20 14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
VRMS
14
21
10
28
35
42
56
70
105
140
Volts
40
50
150
200
Volts
2.0
Maximum RMS Voltage
t, TIME (ns)
RATINGS
Maximum Recurrent Peak Reverse Voltage
0.7 0.5 1.0
2.0
3.0
5.0 7.0
10
20
20
VDC
V R , REVERSE VOLTAGE (VOLTS)
Maximum Average Forward Rectified Current
IO
Figure 7. Capacitances
Figure
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
Maximum DC Blocking Voltage
t r @ V CC = 120 V
300
200
20 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
10
Single phase 7.0
half wave, 60Hz, resistive of inductive load.
C ibo
For capacitive5.0load, derate current by 20%
Marking Code
I C /I B = 10
T J = 25°C
T J = 25°C
30
Dimensions in inches and (millimeters)
1000
0.2 0.3 0.5
30
1.0
2.0 3.0
60
5000
Typical Junction Capacitance (Note 1)
3000
Operating Temperature Range
2000
Storage Temperature Range
20 30
100
50
100
200
Amp
8. Turn–On
Time
30
RΘJA
CJ
10
80
I C , COLLECTOR
CURRENT (mA)
1.0
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
5.0
t f @ V CC
= 120 V
-55 to +125
TJ
TSTG
Amp
40
I C /I B = 10 120
T J = 25°C
-55 to +150
℃/W
PF
℃
- 65 to +175
t f @ V CC = 30 V
℃
1000
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
t, TIME (ns)
Maximum Forward Voltage at 1.0A DC
500
Maximum Average Reverse Current at @T A=25℃ 300
Rated DC Blocking Voltage
@T A=125℃200
NOTES:
VF
0.50
0.70
0.85
0.5
t IsR@ V CC = 120 V
10
0.9
0.92
Volts
mAmp
100
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
50
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200
I C , COLLECTOR CURRENT (mA)
Figure 9. Turn–Off Time
2012-06
2012-11
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.
WILLAS
FM120-M+
THRU
MMBT5551WT1
FM1200-M+
1.0ADUAL
SURFACE
BARRIER RECTIFIERS -20V- 200V
NPNMOUNT
SMALLSCHOTTKY
SIGNAL SURFACE
SOD-123+ PACKAGE
Pb Free Product
MOUNT TRANSISTOR
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
SOT-323
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
.087(2.20)
• Silicon epitaxial planar chip, metal silicon junction.
of
• Lead-free parts meet environmental standards
.070(1.80)
0.146(3.7)
0.130(3.3)
.004(0.10)MIN.
.054(1.35)
.045(1.15)
MIL-STD-19500 /228
0.012(0.3) Typ.
• RoHS product for packing code suffix "G"
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
.096(2.45)
.078(2.00)
Mechanical data
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
.056(1.40)
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
.010(0.25)
.003(0.08)
.047(1.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
.004(0.10)MAX.
Marking Code
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VRRM
Maximum Recurrent Peak Reverse Voltage
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
.016(0.40)
IO
.008(0.20)
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
14
40
15
50
16
60
TJ
Operating Temperature Range
Storage Temperature Range
10
100
115
150
120
200
Volts
28
35
42
56
70
105
140
40
50
60
80
100
150
200
Volts
1.0
30
and (millimeters)
Dimensions
in inches
CJ
Typical Junction Capacitance (Note 1)
18
80
Volts
.043(1.10)
.032(0.80)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
-55 to +125
40
120
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS
ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
MMBT5551WT1
FM1200-M+
1.0ADUAL
SURFACE
NPNMOUNT
SMALLSCHOTTKY
SIGNAL SURFACE
BARRIER RECTIFIERS -20V- 200V
SOD-123+
PACKAGE
Pb Free Product
MOUNT TRANSISTOR
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
efficiency.
• Low power loss, high
Device PN Packing 0.146(3.7)
0.130(3.3)
• High current capability, low forward
(1) voltage drop.
MMBT5551WT1 G
‐WS Tape&Reel: 3 Kpcs/Reel capability.
• High surge
Guardring for overvoltage protection.
•Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching.
epitaxial planar chip, metal silicon junction.
• Silicon
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak Reverse Voltage
Volts
VRRM
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS
Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Amps
Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Amps
superimposed on rated load (JEDEC method)
℃/W
40
Typical Thermal
Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, PF
120
Typical Junction Capacitance (Note 1)
CJ
life‐saving implant or other applications intended for life‐sustaining or other related -55
to
+125
-55
to
+150
Operating Temperature Range
TJ
℃
- 65 to +175
Storage Temperature
Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Volts
0.9
Maximum Forward
Voltage
at
1.0A
DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAmp
such applications do so at their own risk and shall agree to fully indemnify WILLAS 10
@T A=125℃
Rated DC Blocking Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.