380mA N-Channel Small Signal MOSFET

2N7002KLT1
380mA N-Channel Small Signal MOSFET - 60V
SOT-23 PACKAGE
PRIMARY CHARACTERISTICS
60 V
RDS(on) MAX
ID MAX
(Note 1)
2.3 W @ 10 V
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
380 mA
Simplified Schematic
2.7 W @ 5.0 V
RK
W
V(BR)DSS
Gate
1
Gate
RK
W
1
2
3
Source
= Device Code
=Month Code
Source
Drain
2
(Top View)
FEATURES
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•
•
APPLICATIONS
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We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
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MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
Drain Current (Note 1)
Steady State
t<5s
ID
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
320
230
mA
380
270
Power Dissipation (Note 1)
Steady State
t<5s
mW
PD
300
420
Pulsed Drain Current (tp = 10 ms)
IDM
Operating Junction and Storage
Temperature Range
TJ, TSTG
1.5
A
−55 to
+150
°C
IS
300
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Gate−Source ESD Rating
(HBM, Method 3015)
ESD
2000
V
Source Current (Body Diode)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Junction−to−Ambient − Steady State
(Note 1)
Junction−to−Ambient − t ≤ 5 s (Note 1)
Symbol
RqJA
Max
417
RqJA
300
Unit
°C/W
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
2014.11
www.willas.com.tw
Rev. >0ϭ
P1
2N7002KLT1
380mA N-Channel Small Signal MOSFET - 60V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Units
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
71
VGS = 0 V,
VDS = 60 V
VGS = 0 V,
VDS = 50 V
Gate−to−Source Leakage Current
IGSS
V
mV/°C
TJ = 25°C
1
TJ = 125°C
500
TJ = 25°C
100
nA
±10
mA
2.5
V
VDS = 0 V, VGS = ±20 V
mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
1.0
4.0
mV/°C
VGS = 10 V, ID = 500 mA
2.3
VGS = 5.0 V, ID = 50 mA
2.7
VDS = 5 V, ID = 200 mA
W
mS
80
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
pF
34
VGS = 0 V, f = 1 MHz,
VDS = 25 V
3
2.2
nC
0.71
VGS = 4.5 V, VDS = 10 V;
ID = 500 mA
0.1
0.32
0.16
SWITCHING CHARACTERISTICS, VGS = V (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
Fall Time
ns
3.8
VDS = 10 V, VGEN = 10 V,
ID = 500 mA
tf
3.4
19
12
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 115 mA
TJ = 25°C
TJ = 85°C
1.4
V
0.7
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures
2014.11
www.willas.com.tw
Rev. >0ϭ
P2
2N7002KLT1
380mA N-Channel Small Signal MOSFET - 60V
TYPICAL ELECTRICAL CHARACTERISTICS
0.4
VGS= 5,6,7.8,9.10 V
4.0 V
0.6
0.4
0.0
0.0
0.5
1.0
1.5
2.0
0.2
o
Tj=125 C
o
Tj=25 C
o
Tj=-55 C
2.5
0.0
3.0
0
1
2
3
4
5
6
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5.0
4.5
4.0
3.5
VGS= 10V
O
TJ= 125 C
O
TJ= 85 C
3.0
2.5
O
2.0
1.5
TJ= 25 C
O
TJ= -55 C
1.0
0.5
0.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
2014.11
0.3
0.1
3.0 V
0.2
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
0.8
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
1.0
6.0
5.5
VGS= 5.0V
O
TJ= 125 C
5.0
4.5
O
TJ= 85 C
4.0
3.5
O
TJ= 25 C
3.0
2.5
2.0
O
1.5
TJ= -55 C
1.0
0.5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Temperature
www.willas.com.tw
Rev. >0ϭ
P3
2N7002KLT1
380mA N-Channel Small Signal MOSFET - 60V
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
10
ID = 0.5 A
ID= 0.5 A
9
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.8
8
7
6
5
4
3
1
2
3
4
5
6
7
8
9
1.2
VGS= 10 V
1.0
0.8
o
[email protected]= 25 C: 2.3 Ω
o
[email protected]= 25 C: 2.7 Ω
0.4
-50 -25
10
0
25
50
75 100 125 150
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
Figure 6. On−Resistance Variation with
Temperature
4.5
60
Frequency = 1 MHz
VGS, GATE−TO−SOURCE VOLTAGE (V)
55
C, CAPACITANCE (pF)
50
Ciss
45
40
35
30
25
20
15
Coss
10
5
0
2014.11
VGS= 5.0 V
1.4
0.6
2
1
1.6
Crss
0
5
10
15
20
25
30
4.0
VDS= 10 V
IDS= 0.5 A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
www.willas.com.tw
Rev. >0ϭ
P4
2N7002KLT1
380mA N-Channel Small Signal MOSFET - 60V
TYPICAL ELECTRICAL CHARACTERISTICS
IS, SOURCE CURRENT (A)
2
1
o
Tj= 150 C
o
Tj =25 C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
2014.11
www.willas.com.tw
Rev. >0ϭ
P5
2N7002KLT1
380mA N-Channel Small Signal MOSFET - 60V
Outline Drawing
.102(2.64)
.063(1.60)
.047(1.20)
.122(3.10)
.106(2.70)
.083(2.10)
.006(0.15)MIN.
SOT-23
.008(0.20)
.003(0.08)
.95 TYP
.080(2.04)
.070(1.78)
.020(0.50)
.012(0.30)
.049(1.25)
.035(0.89)
.004(0.10)MAX.
Dimensions in inches and (millimeters)
2014.11
www.willas.com.tw
Rev.E
Rev. >0ϭ
P6
2N7002KLT1
380mA N-Channel Small Signal MOSFET - 60V
SOT-23
Suggested Soldering Pad Layout
0.0355
(0.90)
0.0435
0.0315
(0.80)
(1.10)
0.0435
(1.10)
Dimensions in inches and (millimeters)
2014.11
www.willas.com.tw
RevA
Rev. >0ϭ
P7
2N7002KLT1
380mA N-Channel Small Signal MOSFET - 60V
Ordering Information: Device PN 2N7002KLT1 ‐T(1) H(2)‐WS Note: (1) Packing code, Tape & Reel Packing
Packing Tape&Reel: 3 Kpcs/Reel (2) Halogen free product for packing code suffix “H” ***Disclaimer***
WILLAS reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. WILLAS or anyone on its behalf assumes no responsibility or liability
for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters
which may be included on WILLAS data sheets and/ or specifications can
and do vary in different applications and actual performance may vary over time.
WILLAS does not assume any liability arising out of the application or
use of any product or circuit.
This is the preliminary specification. WILLAS products are not designed, intended or
authorized for use in medical, life-saving implant or other applications intended for
life-sustaining or other related applications where a failure or malfunction of component
or circuitry may directly or indirectly cause injury or threaten a life without expressed
written approval of WILLAS. Customers using or selling WILLAS components for use in
such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc
and its subsidiaries harmless against all claims, damages and expenditures.
2014.11
www.willas.com.tw
Rev. >0ϭ
P8