RENESAS RJJ0101DPD-00-J2

RJJ0101DPD
P Channel Power MOS FET
High Speed Switching
REJ03G1580-0200
Preliminary
Rev.2.00
Nov 11, 2007
Features
• VDSS : –12 V
• RDS(on) : 38 mΩ(TYP)
• ID : –5 A
Outline
RENESAS Package code: PRSS0004ZA-A
(Package name: MP-3A)
3
4
12
3
1.
2.
3.
4.
1
2, 4
Application
• Power management switching, etc.
REJ03G1580-0200 Rev.2.00 Nov 11, 2007
Page 1 of 6
Gate
Drain
Source
Drain
RJJ0101DPD
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID(pulse)
Pch Note1
θch-c
Tch
Tstg
Ratings
–12
±8
–5
–20
15
8.33
150
–55 to +150
Unit
V
V
A
A
W
°C/W
°C
°C
Notes: 1. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min.
Typ.
Max.
Unit
Drain to Source breakdown
voltage
V(BR)DSS
–12
—
—
V
ID = –10 mA, VGS = 0 V
Gate to Source breakdown
voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
V(BR)GSS
±8
—
—
V
IG = ±100 µA, VGS = 0 V
IDSS
IGSS
VGS(off)
Static Drain to Source on state
resistance
RDS(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-Drain diode forward voltage
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
—
—
–0.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
38
48
60
1380
235
115
35
150
490
350
-0.8
–1
±10
–1.1
52
70
93
—
—
—
—
—
—
—
–1.1
µA
µA
V
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
V
Notes: 2. Pulse test
REJ03G1580-0200 Rev.2.00 Nov 11, 2007
Page 2 of 6
Conditions
VDS = –12 V, VGS = 0 V
VGS = ±6.4V, VDS = 0 V
ID = –1 mA, VDS = –10 V
ID = –1.5 A, VGS = –4.5 V Note2
ID = –1.5 A, VGS = –2.5 V Note2
ID = –1.5 A, VGS = –1.8 V Note2
VDS = –10 V
VGS = 0 V
f = 1 MHz
VDD = –10 V
ID = –1.5 A
VGS = –4 V
RGS = 4.7 Ω
IS = –3 A, VGS = 0 V
RJJ0101DPD
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–100
Ta = 25°C
1 shot Pulse
–12
100
150
limited by RDS(on)
–1
–10
–100
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
–16
–10 V
–2.2 V
–4.5 V
–3 V
–2.5 V
–2 V
VGS = –1.8 V
–4
VDS = –10 V
Pulse Test
Pulse Test
–2
–4
–6
–8
–12
–8
–4
75°C
25°C
Tc = –25°C
0
0
–10
–1
–3
–2
–4
–5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
–250
Ta = 25°C
–200
–4.0 A
–150
–100
–1.5 A
–50
–1.0 A
0
–2
–4
–6
–8
–10
Gate to Source Voltage VGS (V)
REJ03G1580-0200 Rev.2.00 Nov 11, 2007
Page 3 of 6
Drain to Source On State Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS(on) (mV)
Operation in
–1 this area is
Case Temperature Tc (°C)
–8
0
s
–0.1
–0.1
200
Drain Current ID (A)
Drain Current ID (A)
–16
50
m
n
tio
0
1
ra
4
=
pe
O
8
PW
–10
µs
12
10 µs
0
10
Drain Current ID (A)
16
DC
Channel Dissipation Pch (W)
20
1000
Pulse Test
Ta = 25°C
–2.5 V
100
VGS = –1.8 V
–4.5 V
10
1
–0.1
–1
Drain Current ID (A)
–10
RJJ0101DPD
–4 A
100
–1.8 V
80
–1.5 A
–4 A –1.5 A
60
–1 A
–2.5 V
40
ID = –4 A, –1.5 A, –1 A
20
–25
10000
Capacitance C (pF)
–1 A
VGS = –4.5 V
0
25
50
75
100 125 150
30
10
Tc = –25°C
3
75°C
25°C
1
0.3
VDS = –10 V
0.1
–0.1
–0.3
–3
–1
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics
Ciss
1000
Coss
100
Crss
10
–2
–4
–6
–8
–10
0
ID = –3 A
VDD = –10, –12 V
–7 V
–5 V
–8
–5 V
–4
–7 V
–10 V
VDD = –12 V
–8
20
–16
10
Drain to Source Voltage VDS (V)
Gate Charge Qg (nc)
Switching Characteristics
Reverse Drain Current vs.
Source to Drain Voltage
–16
Reverse Drain Current IDR (A)
VGS = –4.5 V, VDD = –10 V
td(off)
tf
tr
100
td(on)
10
–0.1
–1
Drain Current
–10
ID (A)
REJ03G1580-0200 Rev.2.00 Nov 11, 2007
Page 4 of 6
–10
0
0
–12
1000
Switching Time t (ns)
Pulse Test
Case Temperature Tc (°C)
VGS = 0
f = 1 MHz
0
100
–100
Pulse Test
–12
–5 V
–8
VGS = 0, 5 V
–4
Ta = 25°C
0
–0.4
–0.8
–1.2
–1.6
–2.0
Source to Drain Voltage VSDF (V)
Gate to Source Voltage VGS (V)
Pulse Test
Forward Transfer Admittance |yfs| (S)
120
Forward Transfer Admittance vs.
Drain Current
Drain to Source Voltage VDS (V)
Drain to Source On State Resistance
RDS(on) (mΩ)
Static Drain to Source on State Resistance
vs. Temperature
RJJ0101DPD
Normalized Transient Thermal Impedance
θch-c (°C/W)
Normalized Transient Thermal Impedance vs. Pulse Width
100
1shot pulse
10
1
0.1
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Switching Time Waveform
Vin
10%
D.U.T.
RL
Vin
–4 V
50 Ω
90%
Vout
td(on)
REJ03G1580-0200 Rev.2.00 Nov 11, 2007
Page 5 of 6
90%
90%
VDD
= –10 V
10%
10%
tr
td(off)
tf
RJJ0101DPD
Package Dimensions
Previous Code

0.76 ± 0.2
Unit: mm
2.3
0.5 ± 0.2
0.1 ± 0.1
2.5Min
1Max
6.1 ± 0.2
6.6
5.3 ± 0.2
MASS[Typ.]
0.32g
1.4 ± 0.2
RENESAS Code
PRSS0004ZA-A
1 ± 0.2
JEITA Package Code
SC-63
10.4Max
Package Name
MP-3A
0.76
0.5 ± 0.2
1
2.3
2.3 ± 0.2
Ordering Information
Part No.
RJJ0101DPD-00-J2
Quantity
3000 pcs
REJ03G1580-0200 Rev.2.00 Nov 11, 2007
Page 6 of 6
Shipping Container
Taping
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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