SCD16H AND SCD110H

ZOWIE
Schottky Barrier Diode
(60V~100V / 1.0A)
SCD16H AND SCD110H
OUTLINE DIMENSIONS
FEATURES
Case : 2010
* Halogen-free type
Compliance to RoHS product
Lead less chip form, no lead damage
Low power loss, High efficiency
High current capability, low VF
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Mounting Pad Layout
4.5 ± 0.1
APPLICATION
2.60
1.47
MIN.
0.95 ± 0.2
Switching mode power supply applications
Portable equipment battery applications
High frequency rectification
DC / DC Converter
Telecommunication
MAX.
0
0.5
1.27
0.95 ± 0.2
MIN.
5.14
REF.
+ 0.2
0.96
- 0.1
*
*
*
*
*
Unit : mm
2.20 ± 0.1
*
*
*
*
*
Equivalent : SMA
DO-214AC
MECHANICAL DATA
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity : Laser Cathode band marking
Weight : 0.02 gram
MARKING
SCD
16 .
PACKING
Voltage class: 6 = 60V, 10 = 100V
* 3,000 pieces per 7" (178mm ± 2mm) reel
* 4 reels per box
* 6 boxes per carton
o
Absolute Maximum Ratings (Ta = 25 C)
Rating
ITEM
Symbol
Repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
Peak forward surge current
IFSM
Operating junction temperature Range
Conditions
SCD16H
60
TSTG
Storage temperature Range
100
8.3ms single half sine-wave
Tj
Unit
SCD110H
V
1.0
A
30
A
-55 to +150
o
C
-55 to +150
o
C
o
Electrical characteristics (Ta = 25 C)
ITEM
Forward voltage (NOTE 1)
Repetitive peak reverse current
Junction capacitance
Thermal resistance
Symbol
Conditions
Type
Min.
Typ.
Max.
Unit
IF = 0.1A
IF = 0.5A
IF = 1.0A
SCD16H
-
0.38
0.48
0.60
0.70
V
IF = 0.1A
IF = 0.5A
IF = 1.0A
SCD110H
-
0.45
0.63
0.76
0.85
V
VR = Max. VRRM , Ta = 25 oC
-
0.02
0.20
mA
VF
IRRM
VR = 4V, f = 1.0 MHz
-
110
-
Rth(JA)
Cj
Junction to ambient (NOTE 2)
-
88
-
o
C/W
pF
Rth(JL)
Junction to lead (NOTE 2)
-
28
-
o
C/W
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.
REV. 1
2014/05
ZOWIE
SCD16H AND SCD110H
(60V~100V/1.0A)
FIG.1 - FORWARD CURRENT DERATING CURVE
30
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED ON
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
1.0
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
0.5
0
8.3ms Single Half Sine-Wave
(JEDEC Method)
25
20
15
10
5
0
0
60
80
100
120
140
160
1
180
10
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
10
IINSTANTANEOUS FORWARD CURRENT, (A)
100
NUMBER OF CYCLES AT 60Hz
o
LEAD TEMPERATURE, C
1.00
0.10
0.01
10
o
TJ=100 C
1.0
0.10
o
TJ=25 C
0.01
SCD16H
SCD110H
o
Ta=25 C
0.001
.001
0
0.1
0.2
0.3
0.4
0.5 0.6
0.7
0.8
0.9
0
1.0
20
FORWARD VOLTAGE, (V)
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
400
JUNCTION CAPACITANCE, pF
o
TJ = 25 C
f=1.0MHz
Vsig=50mVP-P
100
10
.1
1.0
10
100
REVERSE VOLTAGE, VOLTS
REV. 1
2014/05