2SK3134(L), 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1066-0400 (Previous: ADE-208-721B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) 1 1 2 D 4 4 1. Gate 2. Drain 3. Source 4. Drain G 2 3 3 S Rev.4.00 Sep 07, 2005 page 1 of 8 2SK3134(L), 2SK3134(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID Ratings 30 ±20 75 300 75 35 122 100 150 –55 to +150 ID(pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Symbol V(BR)DSS IGSS IDSS VGS(off) Static drain to source on state resistance RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF Body–drain diode reverse recovery time Note: 4. Pulse test Rev.4.00 Sep 07, 2005 page 2 of 8 trr Min 30 — — 1.0 — — 50 — — — — — — — — — — — — Typ — — — — 4.0 5.5 80 6800 1550 500 130 16 30 50 370 550 380 1.05 80 Max — ±0.1 10 2.5 5.0 8.5 — — — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 ID = 1 mA, VDS = 10 V Note 4 ID = 40 A, VGS = 10 V Note 4 ID = 40 A, VGS = 4 V Note 4 ID = 40 A, VDS = 10 V Note 4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, VGS = 10 V, ID = 75 A VGS = 10 V, ID = 40 A, RL = 0.25 Ω IF = 75 A, VGS = 0 IF = 75 A, VGS = 0 diF/ dt = 50 A/µs 2SK3134(L), 2SK3134(S) Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 Drain Current ID (A) 120 80 40 80 50 100 150 30 10 µs 0µ PW s 1 = m DC 10 s m Op s( e 1 s (T rati c = on hot ) 25 Operation in °C ) 3 this area is limited by RDS(on) 1 30 10 100 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 100 VGS = 10 V Pulse Test 5V 3V 60 40 20 2.5 V 2 4 6 8 80 VDS = 10 V Pulse Test 60 40 25°C 20 75°C 0 10 1 Tc = –25°C 2 3 4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.4 0.3 ID = 50 A 0.2 0.1 20 A 10 A 0 3 Case Temperature TC (°C) 4V 0 0.1 Ta = 25°C 0.1 0.3 1 200 Drain Current ID (A) 100 Drain Current ID (A) 100 10 0.3 0 Drain to Source Saturation Voltage VDS (on) (V) 10 300 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.4.00 Sep 07, 2005 page 3 of 8 Static Drain to Source on State Resistance RDS (on) (mΩ) Channel Dissipation Pch (W) 160 5 100 Pulse Test 30 10 VGS = 4 V 3 10 V 1 0.3 0.1 1 3 10 30 100 300 1000 Drain Current ID (A) Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (mΩ) 2SK3134(L), 2SK3134(S) 20 Pulse Test 16 12 ID = 50 A 8 10, 20 A 4V 4 10, 20, 50 A VGS = 10 V 0 –50 0 50 100 150 200 VDS = 10 V Pulse Test 100 50 Tc = –25°C 20 10 25°C 5 75°C 2 1 0.5 0.1 0.3 1 3 10 30 100 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 30000 di / dt = 50 A / µs VGS = 0, Ta = 25°C VGS = 0 f = 1 MHz Capacitance C (pF) 500 200 100 50 10000 Ciss 3000 Coss 1000 Crss 300 20 50 0.3 1 3 10 30 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 ID = 75 A VGS 40 16 VDD = 20 V 10 V 5V 30 VDS 20 12 8 10 0 100 0 100 4 VDD = 20 V 10 V 5V 80 160 240 320 Gate Charge Qg (nc) Rev.4.00 Sep 07, 2005 page 4 of 8 0 400 1000 td(off) 500 Switching Time t (ns) 10 0.1 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 200 Case Temperature TC (°C) 1000 Drain to Source Voltage VDS (V) 500 tf 200 tr 100 td(on) 50 20 VGS = 10 V, VDD = 10 V PW = 5 µs, duty < 1 % 10 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 2SK3134(L), 2SK3134(S) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current IDR (A) Reverse Drain Current vs. Source to Drain Voltage 100 10 V 80 5V 60 VGS = 0, –5 V 40 20 Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 200 IAP= 35 A VDD = 15 V duty < 0.1 % Rg > 50 Ω 160 120 80 40 0 25 VSDF (V) 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 1.25°C/W, Tc = 25°C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 µ D= PW T 100 µ 1m 10 m Pulse Width 100 m 1 10 PW (S) Avalanche Test Circuit Avalanche Waveform V L VDS PW T EAR= Monitor DSS 1 • L • IAP2 • V DSS – VDD 2 IAP V(BR)DSS Monitor IAP Rg D. U. T VDS VDD ID Vin 15 V 50 Ω 0 Rev.4.00 Sep 07, 2005 page 5 of 8 VDD 2SK3134(L), 2SK3134(S) Switching Time Test Circuit Switching Time Waveforms Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 Ω VDD = 10 V Vout 10% 10% 10% 90% td(on) Rev.4.00 Sep 07, 2005 page 6 of 8 tr 90% td(off) tf 2SK3134(L), 2SK3134(S) Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] PRSS0004AE-A LDPAK(L) / LDPAK(L)V 1.40g 8.6 ± 0.3 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 RENESAS Code Package Name PRSS0004AE-B LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 ± 0.1 MASS[Typ.] Unit: mm 1.30g (1.5) 10.0 Rev.4.00 Sep 07, 2005 page 7 of 8 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 2.54 ± 0.5 0.2 0.86 +– 0.1 7.8 7.0 2.49 ± 0.2 0.2 0.1 +– 0.1 1.37 ± 0.2 1.3 ± 0.2 7.8 6.6 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 1.7 SC-83 2.49 ± 0.2 11.0 ± 0.5 11.3 ± 0.5 0.3 10.0 +– 0.5 (1.4) 4.44 ± 0.2 10.2 ± 0.3 0.2 0.86 +– 0.1 JEITA Package Code Unit: mm 2.2 2SK3134(L), 2SK3134(S) Ordering Information Part Name 2SK3134L-E 2SK3134STL-E Quantity 500 pcs 1000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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