ZOWIE High Efficient Rectifier (200V~1000V / 1.0A) SEGC10DH THRU SEGC10MH FEATURES OUTLINE DIMENSIONS Halogen-free type Compliance to RoHS product GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction Lead less chip form, no lead damage Low power loss , High efficiency High current capability Plastic package has Underwriters Laboratory Flammability Classification 94V-0 1.50 Typ. Case : 1206-S 1.60 ± 0.1 * * * * * * * * Unit : mm 0.05 3.40 ± 0.1 40 R0. 0.70 ± 0.2 0.70 ± 0.2 APPLICATION 0.96 ± 0.20 * General purpose rectification * Surge absorption Equivalent to SOD-123 MECHANICAL DATA MARKING Case : Packed with FRP substrate and epoxy underfilled Terminals : Pure Tin plated (Lead-Free), solderable per MIL-STD-750, Method 2026. Polarity : Cathode Band, Laser marking Weight : 0.012 gram Cathode mark Amps class (1.0Amps) 10 ED. Halogen-free type Voltage class Series code PACKING (High Efficient Rectifier) * 3,000 pieces per 7" (178mm ± 2mm) reel * 4 reels per box * 6 boxes per carton Voltage class : D = 200V, G = 400V, J = 600 K = 800V, M = 1000V o Absolute Maximum Ratings (Ta = 25 C) SEGC10 ITEM Symbol Conditions Repetitive peak reverse voltage VRRM Average forward current IF(AV) Peak forward surge current IFSM 8.3ms single half sine-wave Trr IF = 0.5A, IR = 1.0A, Irr = 0.25A Reverse recovery time Operating junction and storage temperature Range ITEM Forward voltage Repetitive peak reverse current Junction capacitance Thermal resistance DH GH JH KH MH 200 400 600 800 1000 Symbol V 1.0 A 15 A 50 Tj,TSTG Unit 75 nS o -65 to +175 Type Min. Typ. Max. SEGC10DH SEGC10GH SEGC10JH SEGC10KH SEGC10MH - 0.95 1.00 - 1.10 1.25 - 1.50 1.70 - 1.50 1.70 - 1.50 1.70 VR = Max. VRRM , Ta = 25 C - 0.10 5 uA VR = 4V, f = 1.0 MHz - 9 - pF Rth(JA) Junction to ambient (NOTE) - 123 - Rth(JL) Junction to lead (NOTE) - 45 - VF IRRM Cj Conditions C IF = 1.0A o Unit V o C/W NOTES : Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas. REV. 0 2009/11 ZOWIE SEGC10DH THUR SEGC10MH FIG.1 - TYPICAL FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 20 8.3ms SINGLE HALF SINE-WAVE RESISTIVE OR INDUCTIVE LOAD PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 1.0 0.5 15 10 5 0 0 0 25 50 75 100 125 150 1 175 10 100 LEAD TEMPERATURE, C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER BRIDGE ELEMENT o 100 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 10.00 IINSTANTANEOUS FORWARD CURRENT, AMPERES (200V~1000V / 1.0 A) 1.00 o TJ=25 C 0.10 o TJ=150 C 10.0 o TJ=125 C 1.0 o TJ=25 C 0.10 SEGC10DH SEGC10GH SEGC10JH~SEGC10MH 0.01 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 200 o JUNCTION CAPACITANCE, pF TJ = 25 C 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, VOLTS REV. 0 2009/11