UNISONIC TECHNOLOGIES CO., LTD UT6402 Power MOSFET N-CHANNEL ENHANCEMENT MODE 3 DESCRIPTION SOT-23 The UT6402 is N-Channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities, operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. SYMBOL ORDERING INFORMATION Ordering Number 6 5 4 1 2 3 SOT-26 Note: 1 2 UT6402G-AE3-R UT6402G-AG6-R Pin Assignment: S: Source G: Gate Package SOT-23 SOT-26 1 S D Pin Assignment 2 3 4 5 G D D G S D 6 D Packing Tape Reel Tape Reel D: Drain MARKING SOT-23 SOT-26 64BG www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-152.D UT6402 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 3) ID 6.9 A Pulsed Drain Current (Note 2) IDM 20 A Power Dissipation PD 2 W Junction Temperature TJ +150 °C Strong Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient (Note 3) SYMBOL θJA MIN TYP 74 MAX 110 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0 V, ID =250µA Drain-Source Leakage Current IDSS VDS =30V, VGS =0 V Gate-Source Leakage Current IGSS VDS =0 V, VGS = ±20V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID =250 µA On State Drain Current ID(ON) VDS =5V, VGS =4.5V VGS =10V, ID =6.9A Static Drain-Source On-Resistance RDS(ON) (Note 2) VGS =4.5V, ID =5.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS =15 V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note 2) tD(ON) Turn-ON Rise Time tR VGS=10V, VDS=15V, RL=2.2Ω, RG =3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge (Note 2) QG VDS =15V, VGS =10V, ID =6.9A Gate Source Charge QGS Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=1A Maximum Body-Diode Continuous IS Current Reverse Recovery Time tRR IF=6.9 A, dI/dt=100A/μs Reverse Recovery Charge QRR IF=6.9 A, dI/dt=100A/μs Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤0.5%. 3. Surface mounted on 1 in2 copper pad of FR4 board. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 ±100 V µA nA 30 1 20 1.9 3 22.5 34.5 28 42 680 102 77 820 pF 108 4.6 4.1 20.6 5.2 11.5 13.88 16.7 1.82 3.2 0.76 16.5 7.8 V A mΩ mΩ ns nC 1 V 3 A 20 ns nC 2 of 5 QW-R502-152.D UT6402 Power MOSFET TYPICAL CHARACTERISTICS Transfer Characteristics On-Region Characteristics 30 10V 6V VDS=5V 5V 4.5V 16 4V Drain Current,ID (A) 25 Drain Current,ID (A) 20 20 15 3.5V 10 VGS=3V 5 12 8 125℃ 4 25℃ 0 0 1 2 3 4 Drain to Source Voltage,VDS (V) 0 5 0.5 1 1.5 2 2.5 3 3.5 4 Gate to Source Voltage,VGS (V) 4.5 Drain to Source OnResistance,RDS(ON) (mΩ) Reverse Drain Current,IS (A) Normalized On-Resistance Drain to Source OnResistance,RDS(ON) (mΩ) 0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-152.D UT6402 TYPICAL CHARACTERISTICS(Cont.) Gate-Charge Characteristics 10 VDS=15V ID=6.9A 8 f=1MHZ VGS=0V 900 800 6 4 700 CISS 600 500 400 300 200 2 COSS 100 0 CRSS 0 0 6 4 8 10 Gate Charge,QG (nC) 2 12 14 TJ(Max)=150℃ TA=25℃ 100μs RDS(ON) Limited 30 Power (W) 1ms 10ms 0.1s 1s 1 10s 0.1 0.1 TJ(Max)=150℃ TA=25℃ 1 30 Single Pulse Power Rating Junction-to-Ambient 40 10μs 10 20 25 10 15 5 Drain to Source Voltage,VDS (V) 0 Maximum Forward Biased Safe Operating Area 100 Drain Current,ID (A) Capacitance Characteristics 1000 Capacitance (pF) Gate to Source Voltage,VGS (V) Power MOSFET 20 10 DC 0 10 100 0.001 0.01 Drain to Source Voltage,VDS (V) 1 0.1 10 Pulse Width (s) 100 1000 Normalized Maximum Transient Thermal Impedance Normalized Transient Thermal Resistance,ZθJA 10 In descending order D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse D=TON/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5℃/W 1 0.1 PDM 0.01 0.00001 TON T Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-152.D UT6402 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-152.D