UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is a low frequency amplifier. FEATURES * Collector-emitter voltage: BVCEO=-50V * Collector current up to -150mA * High hFE linearity * Complimentary to 2SC945 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SA733G-x-AE3-R 2SA733G-x-AL3-R 2SA733L-x-T92-B 2SA733G-x-T92-B 2SA733L-x-T92-K 2SA733G-x-T92-K 2SA733L-x-T9S-B 2SA733G-x-T9S-B 2SA733L-x-T9S-K 2SA733G-x-T9S-K Note: Pin Assignment: E: Emitter C: Collector Package SOT-23 SOT-323 TO-92 TO-92 TO-92SP TO-92SP B: Base Pin Assignment 1 2 3 E B C E B C E C B E C B E C B E C B Packing Tape Reel Tape Reel Tape Box Bulk Tape Box Bulk MARKING SOT-23 / SOT-323 TO-92 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd TO-92SP 1 of 4 QW-R206-068.H 2SA733 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage RATINGS UNIT -60 V -50 V -5 V SOT-23 300 SOT-323 200 Collector Dissipation PC mW TO-92 750 TO-92SP 550 Collector Current IC -150 mA Junction Temperature TJ 125 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Current Gain Bandwidth Product Output Capacitance Noise Figure SYMBOL BVCBO BVCEO VCE(SAT) ICBO IEBO hFE fT Cob NF TEST CONDITIONS IC=-100A, IE=0 IC=-10mA, IB=0 IC=-100mA, IB=-10mA VCB=-40V, IE=0 VEB=-3V, IC=0 VCE=-6V, IC=-1mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz IC=-0.1mA, VCE=-6V RG=10kΩ, f=100Hz MIN -60 -50 90 100 TYP MAX UNIT V V -0.1 -0.3 V -100 nA -100 nA 600 190 MHz 2.0 3.0 pF 4.0 6.0 dB CLASSIFICATION OF hFE RANK RANGE R 90-180 Q 135-270 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw P 200-400 K 300-600 2 of 4 QW-R206-068.H Capacitance, Cob (pF) Saturation Voltage (MV) Collector Current, IC (mA) DC Current Gain, hFE Collector Current, IC (mA) Current Gain-Bandwidth Product, fT(MHz) 2SA733 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS QW-R206-068.H 3 of 4 2SA733 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-068.H