UNISONIC TECHNOLOGIES CO., LTD MJE2955T PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION 1 TO-220 The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-252 ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE2955TL-TA3-T MJE2955TG-TA3-T MJE2955TL-TN3-R MJE2955TG-TN3-R Note: B: Base C: Collector E: Emitter www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., LTD Package TO-220 TO-252 1 B B Pin Assignment 2 3 C E C E Packing Tube Tape Reel 1 QW-R203-012.E MJE2955T PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector current Base Current Power Dissipation (TA=25°C) SYMBOL VCBO VCEO VEBO IC IB TO-220 TO-252 PD RATINGS -70 -60 -5 -10 -6 75 20 UNIT V V V A A W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0°C ~70°C ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Baser-Emitter on Voltage DC Current Gain Current Gain Bandwidth Product SYMBOL BVCEO BVCBO BVEBO ICBO ICEO ICEX IEBO VCE(SAT)1 VCE(SAT)2 VBE(ON) hFE1 hFE2 fT UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS IC=-200mA IC=-10mA IE=-10mA VCB=-70V VCE=-30V VCE=-70V, VEB(OFF)=-1.5V VEB=-5V IC=-4A, IB=-0.4A IC=-10A, IB=-3.3A VCE=-4V, IC=-4A IC=-4A, VCE=-4V IC=-10A, VCE=-4V VCE=-10V, IC=-0.5A, f=1MHz MIN -60 -70 -5 20 5 2 TYP MAX UNIT V V V -1 mA -700 A -1 mA -5 mA -1.1 V -8.0 -1.8 V 100 MHZ 2 QW-R203-012.E MJE2955T Collector current, IC (A) µs 100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power dissipatioan, PC (W) Saturation voltage, VBE(SAT), VCE(sat) (V) TYPICAL CHARACTERISTICS DC current gain, hFE PNP SILICON TRANSISTOR 3 QW-R203-012.E MJE2955T PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 QW-R203-012.E