UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation *Complementary to 2SD1691 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1151G-x-AA3-R 2SB1151L-x-T60-K 2SB1151G-x-T60-K 2SB1151L-x-TN3-R 2SB1151G-x-TN3-R Note: Pin Assignment: E: Emitter C: Collector Package SOT-223 TO-126 TO-252 B: Base Pin Assignment 1 2 3 E C B E C B B C E Packing Tape Reel Bulk Tape Reel MARKING PACKAGE MARKING SOT-223 TO-126 TO-252 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-022.D 2SB1151 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage RATINGS UNIT -60 V -60 V -7 V -5 A DC Collector Current Pulse(Note 2) -8 A Base Current -1 A 1 W SOT-223 TO-126 1.5 W PD Power Dissipation (Ta=25°C) TO-252 2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2.PW≤10ms, Duty Cycle≤50% SYMBOL VCBO VCEO VEBO IC ICP IB ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Switching Time SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) VBE(SAT) hFE 1 hFE 2 hFE 3 TEST CONDITIONS IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-100uA, Ic=0 VCB=-50V, IE=0 VEB=-7V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-1V, IC=-0.1A VCE=-1V, IC=-2A VCE=-2V, IC=-5A MIN -60 -60 -7 TYP MAX UNIT V V V -10 µA -10 µA -0.14 -0.3 V -0.9 -1.2 V 60 160 50 400 Turn On Time tON 0.15 1 µS Storage Time tSTG 0.78 2.5 µS tF 0.18 1 µS Fall Time Pulse test : PW≤350 µS, Duty Cycle≤2% Pulse CLASSIFICATION OF hFE2 RANK RANGE O 160 ~ 320 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Y 200 ~ 400 2 of 4 QW-R204-022.D DC Current Gain, hFE Collector Current, IC（A） VCEO( MAX) d 0m A ite -20 m IB = IC Derating, dT (%) n Li Power Dissipation, PD (W) tio www.unisonic.com.tw pa d ite m Li n ted tio m i pa Li si /b S UNISONIC TECHNOLOGIES CO., LTD si is 2m 10 s* ms 20 * 0m s D is Collector Current, IC（A） D Collector Current, IC（A） 2SB1151 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS QW-R204-022.D 3 of 4 2SB1151 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS Staturation Voltage, VBE(SAT), VCE(SAT) (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R204-022.D