Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UP2003
Power MOSFET
9A, 25V P-CHANNEL LOGIC
LEVEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR

DESCRIPTION
The UP2003 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.

FEATURES
* RDS(ON)<35 mΩ @ VGS =-4.5 V, ID =-7 A
* RDS(ON)<20 mΩ @ VGS =-10 V, ID =-9 A


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UP2003L-TN3-R
UP2003G-TN3-R

Package
TO-252
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
MARKING
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UP2003

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain Source Voltage
VDSS
-25
V
Gate Source voltage
VGSS
±20
V
Continuous Drain Current
ID
-9
A
Pulsed Drain Current (Note 1)
IDM
-36
Power Dissipation
PD
2.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case

SYMBOL
θJA
θJC
MIN
TYP
MAX
50
25
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain Source Leakage Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate-Threshold Voltage
On-State Drain Current (Note 2)
Drain-Source On-Resistance (Note 2)
SYMBOL
TEST CONDITIONS
MIN
BVDSS
IDSS
IGSS
VGS =0V, ID=-250µA
VDS =-25V, VGS =0V
VDS =0V, VGS =±20V
-25
VGS(TH)
ID(ON)
VDS =VGS, ID =-250µA
VDS = -5V, VGS = -10V
VGS =-4.5V, ID =-7A
VGS =-10V, ID =-9A
-1.0
-50
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =-15V, VGS =0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note 3)
Gate to Source Charge
QG
VDS =-12.5V(BR)DSS, VGS =-10V,
Gate Charge at Threshold
QGS
ID =-9 A
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDS =-12.5V, ID≈-1A, VGS =-10V,
Turn-OFF Delay Time
tD(OFF)
RGS =6Ω ,RL=1Ω
Turn-ON Delay Time
tD(ON)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Continuous Forward Current
IS
Diode Pulse Current (Note 1)
ISM
Forward Voltage (Note 2)
VSD
IF=IS, VGS=0V
Note: 1. Pulse width limited by maximum junction temperature.
2. Pulse test: Pulse Width ≤ 300μsec, Duty Cycle ≤ 2%
3. Independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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TYP
MAX
UNIT
-1
±100
V
µA
nA
-1.5
-3.0
25
15
35
20
1610
410
200
17
5
6
6.2
10
18
10
5
V
A
mΩ
pF
24
nC
9.3
ns
-9
-36
-1.2
A
V
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2.4
VGS=-3.5V
2.2
-4.0V
2.0
-4.5V
1.8
-5V
1.6
-6V
1.4
-7V
1.2
-10V
1.0
0.8
0
10
20
30
40
Drain Current,-ID (A)
50
1.6
On-Resistance vs. Junction Temperature
ID=-9A
VGS=-10V
1.4
1.2
1
0.8
0.6
-50 -25
0 25 50 75 100 125 150 175
Junction Temperature (°С)
Reverse Drain Current,-IS (A)
Normalized Drain to Source On-Resistance,
RDS(ON) (mΩ)
On-Resistance vs. Drain Current
and Gate Voltage
Drain to Source On-Resistance,
RDS(ON) (mΩ)
Normalized Drain to Source On-Resistance,
RDS(ON) (mΩ)
Drain Current,-ID (A)
TYPICAL CHARACTERISTICS
Drain Current,-ID (A)

Power MOSFET
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Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)

Gate-Charge Characteristics
VDS=-5V
ID=-9A
Capacitance Characteristics
2500
8
f=1MHZ
VGS=0V
2000
-10V
6
Capacitance (pF)
Gate to Source Voltage,-VGS (V)
10
-15V
4
2
CISS
1500
1000
COSS
500
CRSS
0
0
0
100
6
12
18
24
Gate Charge,-QG (nC)
50
RDS(ON)
Limited
1ms
10ms
40
1s
10s
30
DC
20
VGS=-10V
Single Pulse
θJA=125°С/W
TA=25°С
1
10
Drain to Source Voltage,-VDS (V)
10
100
0
0.001
0.01
0.1
1
10
Pulse Width (s)
100
1000
Normalized Effective Transient Thermal
Resistance,r(t)
0.1
0.1
30
Single Pulse
θJA=125°С/W
TA=25°С
100μs
100ms
1
5
10
15
20
25
Drain to Source Voltage,-VDS (V)
Single Pulse Maximum Power Dissipationg
Maximum Safe Operating Area
10
0.01
0
30
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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