UNISONIC TECHNOLOGIES CO., LTD 3N80Z Preliminary Power MOSFET 3 Amps, 800Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80Z provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.2Ω @VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 11 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 3N80ZL-TF1-T 3N80ZG-TF1-T Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-220F1 Pin Assignment 1 2 3 G D S Packing Tube 1 of 6 QW-R502-912.a 3N80Z Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0V) VDSS 800 V Drain-Gate Voltage (RG=20kΩ) VDGR 800 V Gate-Source Voltage VGSS ±20 V Gate-Source Breakdown Voltage (IGS=±1mA) BVGSO 30 (MIN) V Insulation Withstand Voltage (DC) VISO 2500 V Avalanche Current (Note 2) IAR 3 A Continuous Drain Current ID 3 A Pulsed Drain Current IDM 10 A Single Pulse Avalanche Energy (Note 3) EAS 170 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. starting TJ=25 °C, ID=IAR, VDD=50V 4. ISD≦2.5A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX). THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATING 62.5 5 UNIT °C/W °C/W 2 of 6 QW-R502-912.a 3N80Z Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 800 V Drain-Source Leakage Current IDSS VDS=800V, VGS=0V 1 μA Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V ±10 μA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 3 3.75 4.5 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.5A 3.2 4.2 Ω Forward Transconductance (Note 1) gFS VDS=15V, ID=1.5A 2.1 S DYNAMIC CHARACTERISTICS Input Capacitance CISS 485 pF VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS 57 pF Reverse Transfer Capacitance CRSS 11 pF SWITCHING CHARACTERISTICS 17 ns Turn-On Delay Time tD(ON) Turn-On Rise Time tR 27 ns VDD=400V, ID=3 A, RG=4.7Ω VGS=10V Turn-Off Delay Time tD(OFF) 36 ns Turn-Off Fall Time tF 40 ns 19 nC Total Gate Charge QG Gate-Source Charge QGS 3.2 nC VDD=640V, ID=3A, VGS=10V Gate-Drain Charge QDD 10.8 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage(Note 1) VSD ISD=3A ,VGS=0V 1.6 V Source-Drain Current ISD 2.5 A Source-Drain Current (Pulsed) ISDM 10 A Reverse Recovery Current IRRM 8.4 A ISD=3A, di/dt=100A/μs, Body Diode Reverse Recovery Time trr 384 ns VDD=50V, TJ=25°C Body Diode Reverse Recovery Charge QRR 1600 nC Notes: 1. Pulse width=300μs, Duty cycle ≤1.5% 2. COSS(EQ) is defined as constant equivalent capacitance giving the same charging time as COSS when VDS increases from 0to 80% VDSS. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-912.a 3N80Z Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. VDD Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-912.a 3N80Z Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-912.a 3N80Z Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-912.a