UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) ≤ 28 mΩ @ VGS=4.5V, ID=6.0A * Ultra low gate charge ( typical 23 nC ) * Low reverse transfer Capacitance ( CRSS = typical 150 pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness SYMBOL D G1 G2 S1 ORDERING INFORMATION Ordering Number Note: S2 UT8205AG-AG6-R UT8205AG-S08-R UT8205AG-P08-R Pin Assignment: S: Source Package SOT-26 SOP-8 TSSOP-8 G: Gate D: Drain Pin Assignment 1 2 3 4 5 6 7 8 S1 D S2 G2 D G1 D S1 S1 G1 G2 S2 S2 D2 D S1 S1 G1 G2 S2 S2 D2 Packing Tape Reel Tape Reel Tape Reel MARKING SOP-8 TSSOP-8 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd SOT-26 1 of 3 QW-R502-287.C UT8205A Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VDSS VGSS ID IDM RATINGS UNIT 20 V ±12 V Continuous 6 A Drain Current (Note 2) 20 A Pulsed SOT-26 1.14 W Power Dissipation (Ta=25°C) (Note 3) PD SOP-8/TSSOP-8 1 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 3. Pulse width limited by TJ(MAX) Drain-Source Voltage Gate-Source Voltage THERMAL DATA PARAMETER SYMBOL SOT-26 Junction to Ambient (Note) SOP-8 TSSOP-8 Note: Pulse Test : Pulse width≤300μs, Duty cycle≤2% θJA RATINGS 110 78 125 UNIT °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient SYMBOL BVDSS ∆BVDSS ∆TJ TEST CONDITIONS VGS=0V, ID=250µA MIN IDSS IGSS VDS=20V, VGS=0V, VGS=±8V VGS(TH) Drain-Source On-State Resistance (Note) RDS(ON) VDS=VGS, ID=250µA VGS=4.5V, ID=6.0A VGS=2.5V, ID=5.2A www.unisonic.com.tw V 0.03 0.5 DYNAMIC PARAMETERS Input Capacitance CISS VDS=20V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time (Note) tD(ON) Turn-ON Rise Time tR VGS=5V, VDS=10V, RD=10Ω, RG=6Ω, ID=1A Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge(Note) QG VDS =20V, VGS =5V, ID =6.0A Gate Source Charge QGS Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note) VSD IS=1.7A, VGS=0V Diode Continuous Forward Current IS VD=VG, VS=1.3V Note: Surface mounted on 1 in2 copper pad of FR4 board; 208°C/W when mounted on min. UNISONIC TECHNOLOGIES CO., LTD MAX UNIT 20 ID=1mA, Reference to 25°C Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage TYP V/°C 1 ±100 μA nA 1.5 28 38 V mΩ mΩ 1035 320 150 pF pF pF 30 70 40 65 23 4.5 7 ns ns ns ns nC nC nC 1.2 1.54 V A 2 of 3 QW-R502-287.C UT8205A TYPICAL CHARACTERISTICS Drain Current vs. Gate Threshold Voltage Drain Current vs. Drain-Source Breakdown Voltage 300 300 250 Drain Current, ID (µA) Drain Current, ID (µA) 250 200 150 100 200 150 100 50 50 0 0 0 5 10 15 20 25 30 Drain-Source Breakdown Voltage, BVDSS(V) 0.4 0.6 0.8 1.0 1.2 2.0 1.8 VGS=4.5V ID=6A VGS=2.5V ID=5.2A 3 2 Drain Current, ID (A) 1.6 5 4 0.2 Drain Current vs. Source to Drain Voltage 7 6 0 Gate Threshold Voltage, VTH (V) Drain-Source On-State Resistance Characteristics Drain Current, ID (A) Power MOSFET 1.4 1.2 1.0 0.8 0.6 0.4 1 0.2 0 0 0 50 100 150 200 250 300 Drain to Source Voltage, VDS (mV) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) 3 of 3 QW-R502-287.C