UNISONIC TECHNOLOGIES CO., LTD 10N60K Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N60K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc. FEATURES * RDS(ON)<1.2Ω @ VGS=10V * Low Gate Charge (Typical 90nC) * Low CRSS ( typical 18 pF) * High Switching Speed * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 10N60KL-TF3-T 10N60KG-TF3-T TO-220F 10N60KL-TF1-T 10N60KG-TF1-T TO-220F1 10N60KL-TF2-T 10N60KG-TF2-T TO-220F2 10N60KL-TF3T-T 10N60KG-TF3T-T TO-220F3 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tube MARKING INFORMATION PACKAGE MARKING TO-220F TO-220F1 TO-220F2 TO-220F3 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-743.E 10N60K Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 10 A 10 A Continuous ID Drain Current Pulsed (Note 2) IDM 38 A Avalanche Energy Single Pulsed (Note 3) EAS 300 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220F/TO-220F1 50 W TO-220F3 Power Dissipation PD TO-220F2 52 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=6mH, IAS=10A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤9.5A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient TO-220F/TO-220F1 TO-220F3 Junction to Case TO-220F2 SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATING 62.5 UNIT °C/W 2.5 °C/W 2.4 °C/W 2 of 6 QW-R502-743.E 10N60K Power MOSFET ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS TEST CONDITIONS MIN TYP MAX UNIT VGS = 0V, ID = 250μA 600 VDS = 600V, VGS = 0V 1 Drain-Source Leakage Current IDSS VDS = 480V, VGS = 0V, TC=125°C 10 Forward VGS = 30 V, VDS = 0 V 100 Gate-Source Leakage Current IGSS Reverse VGS = -30 V, VDS = 0 V -100 Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250µA, Referenced to 25°C 0.7 ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 5A 0.5 0.8 1.2 DYNAMIC CHARACTERISTICS Input Capacitance CISS 1000 2040 Output Capacitance COSS VDS=25V, VGS=0V, f=1.0 MHz 125 215 Reverse Transfer Capacitance CRSS 18 24 SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 50 70 Turn-On Rise Time tR 69 150 VDD=300V, ID =10A, RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 230 260 Turn-Off Fall Time tF 88 105 90 120 Total Gate Charge QG VDS=480V, ID=10A, VGS=10 V Gate-Source Charge QGS 20 (Note 1, 2) Gate-Drain Charge QGD 22 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =10A 1.4 Maximum Continuous Drain-Source Diode IS 10 Forward Current Maximum Pulsed Drain-Source Diode ISM 38 Forward Current Reverse Recovery Time trr 420 VGS = 0 V, IS = 10A, dIF / dt = 100 A/µs (Note 1) Reverse Recovery Charge QRR 4.2 Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw V µA µA nA nA V/°C V Ω pF pF pF ns ns ns ns nC nC nC V A A ns µC 3 of 6 QW-R502-743.E 10N60K Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-743.E 10N60K Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-743.E 10N60K Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (A) Drain Current, ID (µA) Drain Current, ID (µA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-743.E