UNISONIC TECHNOLOGIES CO., LTD 16N50 Power MOSFET 16 A, 500 V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220F1 The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 16N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. 1 TO-220F2 FEATURES * RDS(ON) < 0.38Ω @ VGS=10V, ID=8A * High Switching Speed * 100% Avalanche Tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 16N50L-TF1-T 16N50G-TF1-T 16N50L-TF2-T 16N50G-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 1 G G Pin Assignment 2 3 D S D S Packing Tube Tube MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-532.F 16N50 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER RATINGS UNIT 500 V ±30 V Continuous (TC=25°C) 16 (Note 2) A Drain Current Pulsed (Note 3) 64 (Note 2) A Avalanche Energy Single Pulsed (Note 4) 780 mJ Peak Diode Recovery dv/dt (Note 5) 4.5 V/ns TO-220F1 52 Power Dissipation (TC=25°C) W TO-220F2 62 PD TO-220F1 0.41 Linear Derating Factor above W/°C TC=25°C TO-220F2 0.31 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L = 6.1mH, IAS = 16A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 5. ISD ≤ 16A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS ID IDM EAS dv/dt THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220F1 TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 2.4 2.0 UNIT °C/W °C/W 2 of 6 QW-R502-532.F 16N50 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS ID=250µA, VGS=0V VDS=500V, VGS=0V VDS=400V, VGS=0V, TC=125°C VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=8A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=50V, ID=1.3A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=0.5A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=16A, VGS=0V Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 500 2.0 1 10 +100 -100 V µA µA nA nA 4.0 0.31 0.38 V Ω 1100 1945 235 310 25 30 pF pF pF 32 8.5 14 70 200 750 380 90 310 900 500 nC nC nC ns ns ns ns 16 64 1.4 A A V 45 3 of 6 QW-R502-532.F 16N50 Power MOSFET TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit Gate Charge Waveforms VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Unclamped Inductive Switching Waveforms Unclamped Inductive Switching Test Circuit 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 4 of 6 QW-R502-532.F 16N50 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-532.F 16N50 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Gate Threshold Voltage 300 300 250 250 Drain Current, ID (µA) Drain Current, ID (µA) Drain Current vs. Drain-Source Breakdown Voltage 200 150 100 50 0 200 150 100 50 0 200 400 600 800 0 0 1000 0.7 1.4 2.1 2.8 3.5 4.2 Drain-Source Breakdown Voltage, BVDSS (V) Gate Threshold Voltage, VTH (V) Drain-Source On-State Resistance Characteristics Drain Current vs. Source to Drain Voltage 10 20 Drain Current, ID (A) Drain Current, ID (A) VGS=10V, ID=8A 8 6 4 16 12 8 4 2 0 0 0.8 1.6 2.4 3.2 4 Drain to Source Voltage, VDS (V) 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-532.F