UNISONIC TECHNOLOGIES CO., LTD MMBT9018

UNISONIC TECHNOLOGIES CO., LTD
MMBT9018
NPN SILICON TRANSISTOR
AM/FM AMPLIFIER, LOCAL
OSCILLATOR OF FM/VHF
TUNER
3
1
2
FEATURES

* High Current Gain Bandwidth Product
f T = 1.1GHz (Typ)
3
2

1
SOT-523
ORDERING INFORMATION
Ordering Number
Note:

SOT-23
(JEDEC TO-236)
MMBT9018G-x-AE3-R
MMBT9018G-x-AN3-R
Pin Assignment: E: Emitter
B: Base
Package
SOT-23
SOT-523
C: Collector
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
MARKING
18G
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-032.E
MMBT9018

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
RATINGS
UNIT
30
V
15
V
5
V
50
mA
SOT-23
225
mW
Collector Power Dissipation
PC
SOT-523
150
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VCBO
VCEO
VEBO
IC
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Gain
Current Gain Bandwidth Product
Output Capacitance

SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
VCE(SAT)
hFE
fT
COB
TEST CONDITIONS
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, Ic=0
VCB=12V, IE=0
IC=10mA, IB=1mA
VCE=5V, IC=1mA
VCE=5V, IC=5mA
VCB=10V, IE=0, f=1MHz
MIN
30
15
5
28
700
TYP
100
1100
1.3
MAX
50
0.5
198
1.7
UNIT
V
V
V
nA
V
MHz
pF
CLASSIFICATION of hFE
RANK
RANGE
D
28-45
E
39-60
F
54-80
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
G
72-108
H
97-146
I
132-198
J
180-265
2 of 4
QW-R206-032.E
MMBT9018
TYPICAL CHARACTERISTICS
Static Characteristics
IB=90µA
8
IB=80µA
IB=70µA
IB=60µA
IB=50µA
7
6
5
IB=40µA
4
IB=30µA
3
IB=20µA
2
VCE=5V
100
IB=10µA
1
0
0
DC Current Gain
1000
DC Current Gain, hFE
Collector Current, IC (mA)
10
9
10
1 2 3 4 5 6 7 8 9 10
Collector-Emitter Voltage, VCE ( V)
1
10
Collector Current, IC (mA)
Capacitance, Cob (pF)
Saturation Voltage, VBE(SAT), VCE(SAT) (V)

NPN SILICON TRANSISTOR
Current Gain Bandwidth Product
VCE=5V
1000
100
0.1
1
10
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R206-032.E
MMBT9018
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R206-032.E