UNISONIC TECHNOLOGIES CO., LTD 3N50 Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET 1 TO-220F DESCRIPTION The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 3N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. 1 TO-252 FEATURES * RDS(ON)=3.2Ω @ VGS=10V * High Switching Speed * 100% Avalanche Tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 3N50L-TF3-T 3N50G-TF3-T 3N50L-TN3-R 3N50G-TN3-R Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-220F TO-252 1 G G Pin Assignment 2 3 D S D S Packing Tube Tape Reel 1 of 6 QW-R502-530.C 3N50 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V ID 3 (Note 5) A Continuous (TC=25°C) Drain Current Pulsed (Note 2) IDM 12 (Note 5) A Avalanche Current (Note 2) IAR 3 A 200 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 4) EAR 6.2 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns 25 TO-220F W Power Dissipation (TC=25°C) TO-252 50 PD TO-220F 0.2 Derate above 25°C W/°C TO-252 0.4 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 40mH, IAS = 3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 5. Drain current limited by maximum junction temperature THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220F TO-252 TO-220F TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62.5 110 4.9 2.5 UNIT °C/W °C/W 2 of 6 QW-R502-530.C 3N50 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=500V, VGS=0V Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.5A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=400V, ID=3A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=250V, ID=3A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=3A, VGS=0V Body Diode Reverse Recovery Time trr IS=3A, VGS=0V, dIF/dt=100A/µs (Note 1) Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 500 V 1 µA +100 nA -100 nA 2.0 2.2 4.0 3.2 V Ω 280 50 8.5 365 65 11 pF pF pF 10 1.5 5.5 10 25 35 25 13 nC nC nC ns ns ns ns 30 60 80 60 3 12 1.4 170 0.7 A A V ns µC 3 of 6 QW-R502-530.C 3N50 Power MOSFET TEST CIRCUITS AND WAVEFORMS VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 6 QW-R502-530.C 3N50 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-530.C 3N50 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (mA) Drain Current, ID (µA) Drain Current, ID (µA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-530.C