UNISONIC TECHNOLOGIES CO., LTD UT4812 Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4812 can provide excellent RDS(ON) and low gate charge by using advanced trench technology. The UT4812 is suitable for using as a load switch or in PWM applications. FEATURES * 30V/6.9A * Low RDS(ON) * Reliable and Rugged SYMBOL (7) (8) D1 (4) G2 (2) G1 S2 (3) S1 (1) (5) (6) D2 ORDERING INFORMATION Ordering Number Note: UT4812G-S08-R Pin Assignment: G: Gate Package D: Drain SOP-8 S: Source 1 S 2 G Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-166.C UT4812 Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-166.C UT4812 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 Continuous Drain Current (Note3) ID 6.9 A Pulsed Drain Current (Note1) IDM 30 Power Dissipation PD 2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction-to-Ambient SYMBOL θJA MIN TYP 74 MAX 110 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note2) SYMBOL TEST CONDITIONS MIN BVDSS IDSS IGSS VGS =0 V, ID =250µA VDS =30V, VGS =0 V VDS =0 V, VGS = ±20V 30 VGS(TH) VDS =VGS, ID =250 µA VGS =10V, ID =6.9A VGS =4.5V, ID =5.0A 1 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS =15 V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=10V, VDS=15V, RL=2.2Ω, RGEN =3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG Gate Source Charge QGS VDS =15V, VGS =10V, ID =6.9A Gate Drain Charge QGD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward VSD IS=1A Voltage(Note2) Maximum Continuous Drain-Source Diode IS Forward Current Body Diode Reverse Recovery Time tRR IF=6.9 A, dI/dt=100A/μs Body Diode Reverse Recovery Charge QRR IF=6.9 A, dI/dt=100A/μs Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2%. 2 3. Surface Mounted on 1in pad area, t≤10sec. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT 1 100 V µA nA 1.9 22.5 34.5 3 28 42 V mΩ mΩ 680 102 77 820 4.6 4.1 20.6 5.2 13.84 1.82 3.2 7 6.2 30 7.5 17 0.76 1 V 3 A 20 10 ns nC 16.5 7.8 pF 108 ns nC 3 of 6 QW-R502-166.C UT4812 TYPICAL CHARACTERISTICS Drain Current,ID (A) Drain Current,ID (A) Power MOSFET On-Resistance vs. Drain Current and Gate Voltage 60 On-Resistance vs. Junction Temperature 1.6 ID=5A 1.5 50 VGS=10V 1.4 1.3 VGS=4.5V 40 VGS=4.5V 1.2 30 1.1 20 1 VGS=10V 0.9 0.8 10 0 20 50 100 150 Junction Temperature (℃) 200 Reverse Drain Current,IS (A) 5 10 15 Drain Current,ID (A) Drain to Source OnResistance,RDS(ON) (mΩ) 0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-166.C UT4812 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Gate-Charge Characteristics 10 VDS=15V ID=6.9A 8 Capacitance Characteristics 1000 f=1MHZ VGS=0V 900 800 700 CISS 600 6 500 400 4 300 200 2 COSS 100 0 0 2 6 4 8 10 Gate Charge,QG (nC) 12 14 Single Pulse Power Rating Junctionto-Ambient (Note E) 30 10μs 10ms 0.1s 1 30 TJ(Max)=150℃ TA=25℃ Power (W) 100μs 1ms 10 40 TJ(Max)=150℃ TA=25℃ RDS(ON) Limited 20 25 10 15 5 Drain to Source Voltage,VDS (V) 0 Maximum Forward Biased Safe Operating Area (Note E) 100 Drain Current,ID (A) CRSS 0 20 1s 10 10s DC 0.1 0 0.1 1 10 Drain to Source Voltage,VDS (V) 100 0.001 0.01 1 0.1 10 Pulse Width (s) 100 1000 Normalized Maximum Transient Thermal Impedance Normalized Transient Thermal Resistance,ZθJA 10 In descending order D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse D=TON/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5℃/W 1 0.1 PDM 0.01 0.00001 TON T Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-166.C UT4812 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-166.C