UNISONIC TECHNOLOGIES CO., LTD 2SD1624

UNISONIC TECHNOLOGIES CO., LTD
2SD1624
NPN SILICON TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATION

DESCRIPTION
The UTC 2SD1624 applies to voltage regulators, relay drivers,
lamp drivers, and electrical equipment.

FEATURES
* Adoption of FBET, MBIT processes
* Low collector-to-emitter saturation voltage
* Fast switching speed.
* Large current capacity and wide ASO

ORDERING INFORMATION
Order Number
2SD1624G-x-AB3-R
Note: Pin Assignment: B: Base C: Collector

Package
SOT-89
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
E: Emitter
MARKING
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2SD1624

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation( Tc=25C)
SYMBOL
RATINGS
UNIT
VCBO
60
V
VCEO
50
V
VEBO
6
V
PC
500
mW
3
A
DC
IC
Collector Current
PULSE
ICP
6
A
Junction Temperature
TJ
150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Turn-ON Time
Storage Time
Fall Time

SYMBOL
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
ICBO
IEBO
hFE
fT
COB
tON
tSTG
tF
TEST CONDITIONS
IC=10A, IE=0
IC=1mA, RBE=
IE=10A, IC=0
IC=2A, IB=100mA
IC=2A, IB=100mA
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, Ic=100mA
VCE=10V, IC=50mA
VCE=10V, f=1MHz
See test circuit
See test circuit
See test circuit
MIN
60
50
6
TYP
MAX
0.19
0.94
0.5
1.2
1
1
560
100
150
25
70
650
35
UNIT
V
V
V
V
V
A
A
MHz
pF
ns
ns
ns
CLASSIFICATION OF hFE
RANK
RANGE
R
100-200
S
140-280
UNISONIC TECHNOLOGIES CO., LTD
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T
200-400
U
280-560
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2SD1624

NPN SILICON TRANSISTOR
TEST CIRCUIT
PW=20µS
Duty Cycle≤1%
I B1
INPUT
RB
OUTPUT
I B2
50Ω
25Ω
VR
+
100µF
+
470µF
25V
-5V
Ic=10, IB1= -10, IB2=1A
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2SD1624
TYPICAL CHARACTERISTICS
Collector Current vs.
Base to Emitter Voltage
3.0
1000
VCE=2V
2.8
DC Current Gain vs. Collector Current
VCE=2V
7
5
DC Current Gain, hFE
2.4
1.2
-25℃
℃
1.6
25℃
2.0
Ta=7
5
Collector Current, IC (A)

NPN SILICON TRANSISTOR
0.8
0.4
Ta=75℃
3
2
25℃
-25℃
100
7
5
3
0
0
2
0.2
0.4
0.6
1.0
0.8
Base to Emitter Voltage, VBE (V)
1.2
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7
0.01
2
3
5 7
0.1 2 3 5 7 1.0
Collector Current, IC (A)
2 3
5
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2SD1624

NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
ASO.
10
1.8
ICP
5
D
s
O
t
ra
0.8
io
n
3
2
0.1
5
3
2
2
0.6
0.5
0.4
Mounted on ceramic board
(250mm22×0.8mm)
Ta=25℃ one pulse
5
7
2
3
nt
(2 ed
50 on
m ce
m 2 ra
×0 m
.8 ic
m bo
m a
rd
)
1.0
pe
5
M
ou
1.2
C
1.0
s
2
m
10
0m
1.6
1.5
1.4
10
IC
3
Collector Dissipation vs.
Ambient Temperature
5 7
0.2
2
3
5
7
1.0
10
100
Collector to Emitter Voltage, VCE (V)
No heat sink
0
0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta (℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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